DATA SHEET. BZD23 series Voltage regulator diodes DISCRETE SEMICONDUCTORS Jun 10. Product specification Supersedes data of October 1991

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1 DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D119 Supersedes data of October Jun 10

2 FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Zener working voltage range: 3.6 to 70 V for 46 types Transient suppressor stand-off voltage range: 6. to 430 V for 45 types Available in ammo-pack. DESCRIPTION Cavity free cylindrical glass package through Implotec (1) technology. This package is hermetically sealed handbook, 4 columns k and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. Fig.1 Simplified outline (SOD81) and symbol. a MAM48 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT P tot total power dissipation T tp =5 C; lead length 10 mm; BZD3-C3V6 to -C6V8 see Figs and 3.0 W BZD3-C7V5 to -C510.5 W P tot total power dissipation T amb =55 C; see Figs and 3; BZD3-C3V6 to -C6V8 PCB mounted (see Fig.7) 1.0 W BZD3-C7V5 to -C W P ZSM P RSM T stg T j non-repetitive peak reverse power dissipation t p = 100 µs; square pulse; T j =5 C prior to surge; see Figs 4 and 5 BZD3-C3V6 to -C6V8 300 W BZD3-C7V5 to -C W non-repetitive peak reverse power dissipation 10/1000 µs exponential pulse (see Fig.8); T j =5 C prior to surge BZD3-C7V5 to -C W storage temperature BZD3-C3V6 to -C6V C BZD3-C7V5 to -C C junction temperature BZD3-C3V6 to -C6V C BZD3-C7V5 to -C C 1996 Jun 10

3 ELECTRICAL CHARACTERISTICS Total series T j =5 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT V F forward voltage I F = 0. A; see Fig.6 1. V Per type when used as voltage regulator diodes T j =5 C unless otherwise specified. TYPE No. SUFFIX (1) WORKING DIFFERENTIAL RESISTANCE TEMPERATURE COEFFICIENT TEST CURRENT REVERSE CURRENT at REVERSE V Z (V) at I Z r dif (Ω) ati Z S Z (%/K) at I Z I R (µa) I Z (ma) MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX. V R (V) C3V C3V C4V C4V C5V C5V C6V C6V C7V C8V C9V C C C C C C C C C C C C C C C C C Jun 10 3

4 TYPE No. SUFFIX (1) WORKING DIFFERENTIAL RESISTANCE TEMPERATURE COEFFICIENT TEST CURRENT V Z (V) at I Z r dif (Ω) ati Z S Z (%/K) at I Z I R (µa) I Z (ma) MIN. NOM. MAX. TYP. MAX. MIN. MAX. MAX. C C C C C C C C C C C C C C C C C C Note 1. To complete the type number the suffix is added to the basic type number, e.g. BZD3-C51. REVERSE CURRENT at REVERSE V R (V) 1996 Jun 10 4

5 Per type when used as transient suppressor diodes T j = 5 C unless otherwise specified. TYPE NUMBER REVERSE BREAKDOWN TEMPERATURE COEFFICIENT TEST CURRENT V (BR)R (V) S at I Z (%/K) at I test I test test (ma) CLAMPING V (CL)R (V) at I RSM (A) note 1 REVERSE CURRENT at STAND-OFF I R (µa) MIN. MIN. MAX. MAX. MAX. BZD3-C7V BZD3-C8V BZD3-C9V BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C at V R (V) 1996 Jun 10 5

6 TYPE NUMBER REVERSE BREAKDOWN TEMPERATURE COEFFICIENT TEST CURRENT V (BR)R (V) S at I Z (%/K) at I test I test test (ma) CLAMPING V (CL)R (V) at I RSM (A) note 1 REVERSE CURRENT at STAND-OFF I R (µa) MIN. MIN. MAX. MAX. MAX. BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C BZD3-C Note 1. Non-repetitive peak reverse current in accordance with IEC 60-1, Section 8 (10/1000 µs pulse); see Fig.8. at V R (V) THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length = 10 mm BZD3-C3V6 to -C6V8 87 K/W BZD3-C7V5 to -C K/W R th j-a thermal resistance from junction to ambient note 1 BZD3-C3V6 to -C6V8 145 K/W BZD3-C7V5 to -C K/W Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 µm, see Fig.7. For more information please refer to the General Part of associated Handbook Jun 10 6

7 GRAPHICAL DATA 3 MGD5 3 MGD53 P tot (W) P tot (W) T ( C) 00 Types BZD3-C3V6 to -C6V8 Solid line: tie-point temperature; lead length = 10 mm. Dotted line: ambient temperature; PCB mounted as shown in Fig T ( C) 00 Types BZD3-C7V5 to -C510 Solid line: tie-point temperature; lead length = 10 mm. Dotted line: ambient temperature; PCB mounted as shown in Fig.7. Fig. Maximum total power dissipation as a function of temperature. Fig.3 Maximum total power dissipation as a function of temperature MGD MGD55 P ZSM (W) P ZSM (W) t p (ms) V6 3V9 4V3 4V7 5V1 5V6 6V 6V8 V Znom (V) T j =5 C prior to surge. See also Fig.5. T j =5 C prior to surge. Fig.4 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). Fig.5 Maximum non-repetitive peak reverse power dissipation as a function of nominal working voltage Jun 10 7

8 I F (A) MGD V F (V) MGA00 3 T j =5 C. Fig.6 Forward current as a function of forward voltage; typical values. Dimensions in mm. Fig.7 Device mounted on a printed-circuit board. handbook, I RSM halfpage (%) t 1 t t MGD51 In accordance with IEC 60-1, Section 8. t 1 =10µs. t = 1000 µs. Fig.8 Non-repetitive peak reverse current pulse definition Jun 10 8

9 PACKAGE OUTLINE handbook, full pagewidth 5 max 0.81 max.15 max 8 min 3.8 max 8 min MBC051 Dimensions in mm. The marking band indicates the cathode. Fig.9 SOD81. DEFINITIONS Data sheet status Objective specification Preliminary specification This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale Jun 10 9

DATA SHEET. BZT03 series Voltage regulator diodes DISCRETE SEMICONDUCTORS Jun 11. Product specification Supersedes data of April 1992

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