HEMT Outlook for GaN HEMT Technology 常信和清 吉川俊英 増田哲 渡部慶二 あらまし GaN HEMT High Electron Mobility Transistor ICT GaN HEMT GaN AlGaN 2 2DEG R on GaN HEMT GaN HEMT GaN HEMT GaN HEMT Abstract Because of their high breakdown voltage, high switching speed and low on-state resistance (R on ), GaN high-electron-mobility transistors (HEMTs) have come to be widely used as high-frequency power amplifiers in recent wireless communication systems. There are also high expectations for them as next-generation power conversion devices as we aim for a green ICT society. In this paper, first we review high-frequency and high-efficiency GaN HEMTs and their MMIC power amplifier applications. Second, we explain high-efficiency GaN HEMTs on Si for power conversion applications. GaN HEMTs on Si have attracted much attention for their ability to be mass produced and cost performance. We report their power conversion characteristics in a power factor correction (PFC) circuit of a power supply unit for a high-performance server system. Finally, we describe the outlook for GaN HEMT technology that can help us to achieve a green ICT society. 600 FUJITSU. 64, 5, p. 600-605 09, 2013
まえがき GaN LED GaN HEMT High Electron Mobility Transistor ICT HEMT 1980 GaN HEMT 図 -1 GaN AlGaN 2 2DEG R on GaN HEMT GaN HEMT 100 W GaAs MESFET Si LD- MOSFET 100 W GaN HEMT 100 W MHz n-gan AlGaN 2DEG i-gan SiC or Si -1 GaN HEMT GaN HEMT GaN HEMT 高効率動作 100 R on Si GaN HEMT 2 R on Si GaN HEMT 図 -2 a MHz F -2 b R on DC V DS 3 GaN HEMT FUJITSU. 64, 5 09, 2013 601
V D I D V D リ 0 0.1 0.2 0.3 0.4 0.5 µs I D V D V 60 40 20 V D I D V DS 20 V 2 GHz 0.3 0.2 0.1 0 0 0 0.2 0.4 0.6 0.8 1.0 ns I D A a GaN HEMT b GaN HEMT -2 90 70 高周波 GaN HEMT 技術 GaN HEMT 10 GHz 1 MMIC Monolithic Microwave Integrated Circuit 6 18 GHz MMIC 1 GaN HEMT 1.8 mm 2.4 mm 0 12 GHz 1.1 db 1/10 3 1 MMIC 図 -3 10 GHz 6.3 W 3.6 mm 3.3 mm 1/10 1 C 4 8 GHz X 8 12 GHz Ku 12 18 GHz C Ku GaAs 18 GHz 602 FUJITSU. 64, 5 09, 2013
信増 3.6 3.3 mm 信増 GaN 信増 30 mm GaN 信増 -3 10 GHz GaN 1 MMIC GaN HEMT MMIC 6 18 GHz 2 12.9 W 2 GaN HEMT 2.7 mm 1.2 mm 3 20 GHz 16 db 2.3 3.7 db MMIC 図 -4 12 mm 30 mm 6 18 GHz 10 W 3 パワー GaN HEMT 技術 GaN HEMT Si R on khz 1 MHz GaN HEMT 2 R on GaN HEMT 2 V 12 mm 増 -4 GaN HEMT GaN HEMT 2 V R on Al 2 O 3 ALD Atomic Layer Deposition ALD GaAs InP Si MOSFET GaN GaN HEMT Vth Vth 4 Vth Al 2 O 3 AlOH Al 2 O 3 /GaN Ga Vth 2 V 0.25 V 5 GaN HEMT FUJITSU. 64, 5 09, 2013 603
Threshold Voltage Shift of AlGaN/GaN MIS-HEMTs Using ALD-Al 2 O 3 Gate Insulator films Compound Semiconductor Manufacturing Technology CS- MANTECH 11a.1 2012 Si GaN on Si 6 Si GaN R on GaN HEMT GaN HEMT 6 2.5 kw 図 -5 AC 230 V DC 12 V 94.3 GaN HEMT ICT 今後の展開 GaN HEMT M2M Machine-to- Machine GaN HEMT M2M ICT GaN HEMT むすび GaN HEMT GaN HEMT GaN HEMT ICT AC-DC 95.0 92.5 90.0 87.5 85.0 82.5 80.0 0 500 1000 1500 2000 2500 参考文献 1 S. Masuda et al. GaN single-chip transceiver frontend MMIC for X-band applications IEEE MTT-S International Microwave Symposium June 2012 2 S. Masuda et al. Over 10 W C-Ku band GaN MMIC non-uniform distributed power amplifier with broadband couplers IEEE MTT-S International Microwave Symposium Digest p.1388-1391 May 2010 3 S. Masuda et al. C-Ku band GaN MMIC T/R frontend module using multilayer ceramics technology IEEE MTT-S International Microwave Symposium June 2011 AC-DC W -5 GaN HEMT 4 T. I m a d a e t a l. R e l i a b i l i t y a n a l y s i s o f enhancement-mode GaN MIS-HEMT with gaterecess structure for power supplies IEEE International Integrated Reliability Workshop IIRW p.38-41 October 2011 5 S. Ozaki et al. Effect of Oxidant Source on 604 FUJITSU. 64, 5 09, 2013
6 H. Nakao et al. 2.5-kW Power Supply Unit with Semi-Bridge-Less PFC Designed for GaN-HEMT IEEE Applied Power Electronics Conference March 2013 著者紹介 常信和清 ( じょうしんかずきよ ) GaN HEMT 増田哲 ( ますださとし ) GaN HEMT 吉川俊英 ( きっかわとしひで ) GaN HEMT 渡部慶二 ( わたなべけいじ ) GaN HEMT FUJITSU. 64, 5 09, 2013 605