Ionic outgassing from photoresist compositions upon irradiation at 13.5 nm

Similar documents
Outgassing, photoablation and photoionization of organic materials by the electron-impact and photon-impact methods

Contamination Removal of EUVL masks and optics using 13.5-nm and 172-nm radiation

(OBPL: Out of Band Protection Layer) Ryuji Onishi, Rikimaru Sakamoto, Noriaki Fujitani, Takafumi Endo, Bang-ching Ho

Outgas of Methane from NEG Coating

Performances of fluoropolymer resists for 157-nm lithography

EUVL Optics Contamination from Resist Outgassing; Status Overview

Resist Outgassing and its Role in Optics Contamination

Resist round robin ELETTRA

Our Approaches to EUV Resist Materials. N. Ohshima ELECTRONIC MATERIALS RESEARCH LABORATORIES RESEARCH & DEVELOPMENT MANAGEMENT HEADQUARTERS

EUV Resist Performance under High Stray Light Levels: an Interference Lithography Study

SPINE workshop Uppsala, Sweden, Jan 17-19, 2011 Spacecraft outgassing: Rosetta results

A decade of EUV resist outgas tes2ng Lessons learned. C. Tarrio, S. B. Hill, R. F. Berg, T. B. Lucatorto NIST, Gaithersburg, MD, USA

SUPPORTING INFORMATION

Outgas Testing Update on EUV Light vs. Electron beam

FTIR Detection of Outgassing Chemicals: Instantaneous and Comprehensive Identification and Quantitation

Thermo K-Alpha XPS Standard Operating Procedure

Inert Atmosphere Guide

LC-MS-Guided Isolation of Insulin Secretion-promoting. Monoterpenoid Carbazole Alkaloids from Murraya

Innovative gas and outgassing analysis and monitoring

Total Pressure Measurement Using Residual Gas Analyzers

The use of remote plasma emission spectroscopy as an alternative method of gas sensing for direct monitoring of vacuum processes

In-situ Measurement of outgassing from Chemically Amplified Resist during exposure to 248nm light

Gas Release from Solids, Materials for Vacuum and Leak Detector

Introduction of Vacuum Science & Technology. Diffusion pumps used on the Calutron mass spectrometers during the Manhattan Project.

IUVSTA WORKSHOP WS-63 Surface Phenomena Limiting Pressure in Vacuum Systems REPORT TO IUVSTA. prepared by JOSÉ L. DE SEGOVIA

Plasma Sources and Feedback Control in Pretreatment Web Coating Applications

at NIST: ultra-low outgassing rates

Modeling Approaches to Increase the Efficiency of Clear-Point- Based Solubility Characterization

Practical approach and problems in in-situ RGA calibration

Optical measurement in carbon nanotubes formation by pulsed laser ablation

Development of Cleaning and Processing Techniques for UHV/XHV at Daresbury Laboratory Keith Middleman

Chemistry Chapter 11 Test Review

Facile synthesis of N-rich carbon quantum dots by spontaneous. polymerization and incision of solvents as efficient bioimaging probes

sensors ISSN

WP2 Fire test for toxicity of fire effluents

Supporting information. A metal-organic framework based multifunctional catalytic platform for organic transformation and environmental remediation

A Study on odor reduction for Semiconductor Industry. Cheong-Ju ESH TEAM Administration Division, Hynix Semiconductor Inc.

Operating the LCLS gas attenuator and gas detector system with apertures of 6 mm diameter

Electronic Supplementary Information (ESI)

Quartz etch process to improve etch depth linearity and uniformity using Mask Etcher IV

Remote Plasma Cleaning from a TEM Sample Holder with an Evactron De-Contaminator ABSTRACT

Paper No and Title. Paper 9: Organic Chemistry-III (Reaction Mechanism-2) Module no.13: Addition of Grignard reagent

OSI. Outgassing Measurements on Nonwoven Fabric (H8004) Prepared for:

Additives that prevent or reverse cathode aging in drift chambers with Helium-Isobutane gas *

Variable Depth Bragg Peak Test Method

Mechanical Properties of Acrylic Block Copolymer PSAs

Electronic Supplementary Information (ESI)

Fabrication of Novel Lamellar Alternating Nitrogen-Doped

Supporting Information

Supplementary Material

Graphite and C-C materials for UHV applications

Relative Dosimetry. Photons

Topic 6: Gases and Colligative Properties

Advanced Technology Center. Vacuum Optics. Mark Sullivan December 2, Vacuum Optics 1

A reformative oxidation strategy using high concentration nitric acid for. enhancing emission performance of graphene quantum dots

( ) ADVANCED HONORS CHEMISTRY - CHAPTER 14 NAME: THE BEHAVIOR OF GASES GRAHAM'S LAW WORKSHEET - ANSWERS - V8 PAGE:

FOUP material influence on HF contamination during queue-time

REACTIVE ION ETCHING OF SILICON DIOXIDE USING BOTH OXYGEN AND CARBON DIOXIDE AS GAS ADDITIVES. dames E. Constantino ABSTRACT

CHEMISTRY 102D ASSIGNMENTS. WEEK 1 (August 23-27) Introduction, Classification of Matter, Significant Figures, Dimensional Analysis

A NOVEL SENSOR USING REMOTE PLASMA EMISSION SPECTROSCOPY FOR MONITORING AND CONTROL OF VACUUM WEB COATING PROCESSES

High performance carbon nanotube based fiber-shaped. supercapacitors using redox additives of polypyrrole and. hydroquinone

Supporting Information

Jefferson Lab Bubble Chamber Experiment Update and Future Plans. C(a,g) 16 O. Claudio Ugalde

Supplementary Information

arxiv: v1 [physics.ins-det] 16 Aug 2014

Chapter 10: Gases. Characteristics of Gases

A Longterm Aging Study of the Honeycomb Drift Tubes of HERA-B Using a Circulated and Purified CF -Gas Mixture

Gun Vacuum Performance Measurements February 2003

Go/no-go test for the acceptance of components for unbaked vacuum sectors

Characterization and Modeling of Wafer and Die Level Uniformity in Deep Reactive Ion Etching (DRIE)

noble-metal-free hetero-structural photocatalyst for efficient H 2

Key Laboratory of Material Chemistry for Energy Conversion and Storage (Ministry

LOW PRESSURE EFFUSION OF GASES revised by Igor Bolotin 03/05/12

Outgassing Measurements on EA934NA Coating. Prepared for:

Environmental Engineering-I By Prof S S JAHAGIRDAR

Supplemental Materials

Refinements in the Plasma Processing of Polyimide and B.C.B.

Effect of gases on radical production rates during single-bubble cavitation

The Transition Radiation Detector of the AMS-02 Experiment

Supporting Information

The Gas Attenuator of FLASH

LOW PRESSURE EFFUSION OF GASES adapted by Luke Hanley and Mike Trenary

Particle Control under Wall Saturation in Long-pulse High-density H-mode Plasmas of JT-60U

3. Coupled Techniques in Thermal Analysis

Plasma Cleaner. Yamato Scientific America. Contents. Innovating Science for Over 125 Years. Gas Plasma Dry Cleaner PDC200/210/510 PDC610G.

March CS-1701F Reactive Ion Etcher

The FLUX-METER: implementation of a portable integrated instrumentation for the measurement of CO 2 and CH 4 diffuse flux from landfill soil cover.

Thick PhotoResist Outgassing During MeV Implantation

Vacuum Simulations of the KATRIN Experiment

Real-time PCB Gas Monitoring System (MOHMS-21GP)

CP Chapter 13/14 Notes The Property of Gases Kinetic Molecular Theory

Introduction to Scientific Notation & Significant Figures. Packet #6

Kyoung-Su Im, Z.-C Zhang, and Grant Cook, Jr. LSTC, Livermore, CA USA. 06/14/2016, Dearborn, MI

Thermo Scientific Model 146i Principle of Operation

Material Safety Data Sheet

SAMPLE QUESTIONS AND INFORMATION FOR CANDIDATES

Supporting Information

MASSIVE TITANIUM SUBLIMATION PUMPING IN THE CESR INTERACTION REGION *

Solubility And Temperature Answers

Selection of Materials and Processes for Space Use. Ruben Edeson, Mechanical Engineer, SSTD.

Transcription:

Ionic outgassing from photoresist compositions upon irradiation at 13.5 nm Grace H. Ho, Chih- Jen Liu, Chih- Han Yen, Ming- Hsuan Ho, Shih-Yu Wu, and Yu-Hsian Shih Department of Applied Chemistry National University of Kaohsiung Kaohsiung 811, Taiwan

1. Introduction Outgassing studies by different approaches:

1. Introduction Benchmarked (round robin) resist : ESCAP-type Bis(tert-butylphenyl)iodonium perfluoro-1-butanesulfonate K. R. Dean, et al., Proc. SPIE Vol. 6519 65191P (2007)

1. Introduction Benchmarking resist outgassing rates: - Evaluation by eight institutes. - Lump sum over outgassing species of collection. - Rates ranging over four orders of magnitude. (a) (b) 1.E+13 1.E+14 1.E+15 1.E+16 1.E+17 1.E+18 Molecules/cm 2 /s @ Prod Tool (0.4 W/cm 2 ) (a) K. R. Dean, et al., Proc. SPIE 6519 (2007) 65191P. (b) K. R. Dean, et al., Proc. SPIE 6153 (2007) 61531E.

1. Introduction ITRS, 2007 ed. for overall outgassing rates: For 2 min (under the lens) exposure - Organic materials, 5x10 13 molecules/cm 2 -s - Si-containing materials, 5x10 13 molecules/cm 2 -s How much is too much? K. R. Dean, et al. J. Photopolym. Sci. Technol. 20 (2007) 393 - Most frequent outgassing species (TD/GC-MS) C 6 H 6, C 4 H 8, C 12 H 18, (C 4 H 9 )C 6 H 5, CH 3 CHO, C 9 H 10, C 6 H 10 O, C 4 H 10 O. - Additional outgassing detected (QMS) CO 2, CO, SO 2 /HSO, organosilicon, HF.

1. Introduction 13.5 nm = 91.84 ev, Γ ion 1, ionic outgassing? - This work started from a strange result. Intensity (a. u) F + EUV R&D resist, provided by Tokyo Ohka Kogyo Co., Ltd. CF + CH 3 O + C n H m + CF 3 + Mass number (u)

2. Experimental Solvent PGME, MAK, and PGMEA (from TOK) - Absolute photoabsorption cross, photoionization quantum yield, and ion products. 18 photoacid generators (from Aldrich) - Relative extent of F + outgassing and total ion yield. X - film provided by Nissan Chemicals - Relative extent of of F + and C n H m + outgassing.

2. Experimental - Solvent Lambert Beer s law: Photoabsorption cell σ abs Double ion chamber Γ ion Effusive gas SR light I 0 /I i 2 i 1 Carbon foil QMS Direct counting/summing by QMS Ion products Ion detector

2. Experimental PAG and X-film X-Y-Z manipulator transporting samples Taped samples SR QMS Synchrotron radiation at 13.5 nm (91.84 ev) BL-08A-LSGM, NSRRC

2. Experimental Nine of eighteen PAGs measured of this work PAG of the round-robin resist

3. Results - Solvents Photoabosrption Photoionization

3. Results - Solvents a Center for X-ray Optics, http://www-cxro.lbl.gov/index.php?content=/tools.html b J. A. R. Samson, et al., J. Electron Spectrosc. Rel. Phenom. 123, 265 (2002). Photoabsorption: Ion production: PGME ~ MAK < PGMEA PGME ~ MAK < PGMEA ( 8.6 ~ 8.8 < 11.6 Mb)

3. Results - Solvents PGMEA MAK PGME

3. Results - Solvents PGMEA, MAK, and PGME photoionization at 13.5 nm Γ ion ~ 1.2 1.5. CH 3 CO +, CH 3 OCH 2+, and C n H m + are common ions. - (Major ions+ C n H m+ ) account for most ion products. Molecular ions from MAK photoionization. -CH 3 C(O)CH 3+, C 4 H 10+, and CH 3 C(O)C 5 H 11+. Hydronium ions from PGME. -(CH 3 ) 2 OH + and H 3 O +.

3. Results Photoacid generators Ionic outgassing of PAG upon 13.5 nm irradiation F + C x F y + (C 6 H 5 ) 2 S + F + C x F y+, C n H m + I +

3. Results Photoacid generators Ionic outgassing from PAGs Relative total ionic outgassing - Relative to F + outgassing of (C 6 H 5 ) 3 S + C 4 F 9 SO 3-.

3. Results Photoacid generators + neutral fragments + C 6 H 5

3. Results Photoacid generators Ionic outgassing from PAGs Relative extent of F + outgassing through samples

3. Results Photoacid generators Relative extent of F + outgassing

3. Results Photoacid generators Relative extent of F + outgassing vs. % of F photoabsorption =100 % F photoabsorption overall photoabsorption A property determined by the sum of photoabsorption coefficients of the atomic elements. : Tris(4-tert-butylphenyl)sulfonium Δ: Bis(4-tert-butylphenyl)iodonium More neutral products?

3. Results X film from Nissan Chemicals Relative intensity (a. u.) 1.2 0.8 0.4 0.0 M@19 M@29 M@15 #A #B #C #D #E #F #G #H #I Through sample The extent of ionic outgassing: - polyacrylate > polyester - aliphatic > aromatic (styrene)

4. Brief Summary The importance of ionic outgassing - Γ ion of solvents, 1.2 1.5. Direct counting / summing - Solvent: σ abs, Γ ion, and dissociative photoionization. - PAGs: Relative F + outgassing and total ion products. - X-film: Relative CH 3+, F +, and C 2 H + 5 outgassing. (Major ions + C n H m+ ) - Solvent: CH 3 CO +, CH 3 OCH 2+, and C n H m+. - PAGs: F +, C x F y+, (and C n H m+ ). - X-Films: F +, C n H m+.

Acknowledgement National Synchrotron Radiation Research Center - Dr. B. M. Cheng and Dr. H. S Fung National Science Council - NSC 94 2113 M 390 006 CC3 (endorsed by Tokyo Ohka Kogyo) - NSC 95 2113 M 390 007 Nissan Chemical Industries, Ltd. - Mr. R. Sakamoto, Mr. T. Endo, Mr. Matte Lu and Dr. Bang-Ching Ho - NUK 97-5001