BZD27C3V6P to BZD27C200P

Transcription

1 Zener Diodes with Surge Current Specification Features Sillicon planar zener diodes Low profile surface-mount package Zener and surge current specification Low leakage current Excellent stability High temperature soldering: 260 C/10 s at terminals Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Halogen-free according to IEC available Mechanical Data Case: JEDEC DO-219AB (SMF ) plastic case Weight: approx. 15 mg Ordering Information/Packaging Codes BZD27C..-GSxx GS08 = 3K per 7" reel (8 mm tape) GS18 = 10K per 13" reel (8 mm tape) Part number Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Power dissipation Note: 1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 µm thick) 2) T J = 25 C prior to surge Thermal Characteristics T amb = 25 C, unless otherwise specified Note: 1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 µm thick) Electrical Characteristics T amb = 25 C, unless otherwise specified BZD27C..-M-xx 08 = 3K per 7" reel (8 mm tape) 18 = 10K per 13" reel (8 mm tape) Environmental suffix -M- defines halogen-free Part number Parameter Test condition Symbol Value Unit Non-repetitive peak pulse power dissipation T L = 80 C P tot 2.3 W T A = 25 C P tot 0.8 1) W 100 μs square pulse 2) P ZSM 300 W 10/1000 μs waveform (BZD27-C7V5P to BZD27-C100P) 2) P RSM 150 W 10/1000 μs waveform (BZD27-C110P to BZD27-C200P) 2) P RSM 100 W Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air 1) R thja 180 K/W Thermal resistance junction to lead R thjl 30 K/W Maximum junction temperature T j 150 C Storage temperature range T S - 55 to C Parameter Test condition Symbol Min. Typ. Max. Unit Forward voltage I F = 0.2 A V F 1.2 V 1

2 Electrical Characteristics When used as voltage regulator diodes (T J = 25 C unless otherwise noted) Partnumber Marking code Working voltage 1) Differential resistance Temperature coefficient Test current Reverse current at reverse voltage V Z at I ZT r dif at I Z α Z at I Z I ZT I R V R V Ω %/ C ma μa V min. max. typ. max. min. max. max. BZD27C3V6P D BZD27C3V9P D BZD27C4V3P D BZD27C4V7P D BZD27C5V1P D BZD27C5V6P D BZD27C6V2P D BZD27C6V8P D BZD27C7V5P D BZD27C8V2P D BZD27C9V1P E BZD27C10P E BZD27C11P E BZD27C12P E BZD27C13P E BZD27C15P E BZD27C16P E BZD27C18P E BZD27C20P E BZD27C22P E BZD27C24P F BZD27C27P F BZD27C30P F BZD27C33P F BZD27C36P F BZD27C39P F BZD27C43P F BZD27C47P F BZD27C51P F BZD27C56P F BZD27C62P G BZD27C68P G BZD27C75P G BZD27C82P G BZD27C91P G BZD27C100P G BZD27C110P G BZD27C120P G BZD27C130P G BZD27C150P G BZD27C160P H BZD27C180P H BZD27C200P H Note: 1) Pulse test: tp 5 ms. 2

3 Electrical Characteristics When used as protection diodes (T J = 25 C unless otherwise noted) Partnumber Rev. breakdown voltage BZD27C3V6P to BZD27C200P Test current Temperature coefficient Clamping voltage Reverse current at stand-off voltage V (BR)R at I test I test α Z at I test V C at I 1) RSM I R at V WM V ma %/ C V A μa V min. min. max. max. max. BZD27C7V5P BZD27C8V2P BZD27C9V1P BZD27C10P BZD27C11P BZD27C12P BZD27C13P BZD27C15P BZD27C16P BZD27C18P BZD27C20P BZD27C22P BZD27C24P BZD27C27P BZD27C30P BZD27C33P BZD27C36P BZD27C39P BZD27C43P BZD27C47P BZD27C51P BZD27C56P BZD27C62P BZD27C68P BZD27C75P BZD27C82P BZD27C91P BZD27C100P BZD27C110P BZD27C120P BZD27C130P BZD27C150P BZD27C160P BZD27C180P BZD27C200P Note: 1) Non-repetitive peak reverse current in accordance with "IEC 60-1, section 8" (10/1000 μs pulse); see fig. 5. 3

4 Typical Characteristics T amb = 25 C, unless otherwise specified I F - Forward Current (A) 10 Max. V F Typ. V F V F - Forward Voltage (V) Figure 1. Forward Current vs. Forward Voltage P RSM - Max. Pulse Power Dissipation (W) V Znom - Zener Voltage (V) Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage C D - Typ. Junction Capacitance (pf) C5V1P C6V8P C12P C18P C27P C51P C200P V R - Reverse Voltage (V) Figure 2. Typ. Diode Capacitance vs. Reverse Voltage I RSM (%) t 1 t 2 t 1 = 10 µs t 2 = 1000 µs Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition t 3.0 P tot - Power Dissipation (W) Tie point temperature Ambient temperature T amb - Ambient Temperature ( C) Figure 3. Power Dissipation vs. Ambient Temperature 4

5 Package Dimensions in millimeters (inches) 0.85 (0.033) 0.35 (0.014) 0.25 (0.010) 0.05 (0.002) Detail Z enlarged 0.1 (0.004) 0 (0.000) 1.2 (0.047) 0.8 (0.031) (0.075) 1.7 (0.067) (0.114) 2.7 (0.106) 1.08 (0.043) 0.88 (0.035) 3.9 (0.154) 3.5 (0.138) Foot print recommendation: 1.3 (0.051) 1.3 (0.051) Created - Date: 15. February 2005 Rev. 3 - Date: 13. March 2007 Document no.:s8-v (4) (0.055) 2.9 (0.114) 5

6 Blistertape for SMF PS

7 Ozone Depleting Substances Policy Statement BZD27C3V6P to BZD27C200P It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D Heilbronn, Germany 7

8 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: Revision: 18-Jul-08 1