Typical Performance 1. LTE 20M ACLR dbm. 2 OIP3 _ measured on two tones with a output power 5dBm/ tone, F2 F1 = 1 MHz.

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Millicent Stanley
5 years ago
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Device Features Gain = 15.6 db @ 2140MHz OIP3 = 35.0 dbm @ 2140 MHz Output P1 db = 23.2 dbm @ 2140 MHz N.F = 2.

1 Device Features Gain = MHz OIP3 = MHz Output P1 db = MHz N.F = 2140 MHz Internally matched to 50 ohms Lead-free/RoHS-compliant SOT-89 SMT package Product Description The BBA02 is a BroadBand, GaAs E-pHEMT Amplifier that is ideal for applications demanding high linearity in a wideband of MHz. The BBA02 is internally matched to 50 Ohms and requires no external matching components. It is available in RoHS-compliant SOT-89 SMT package. These devices are 100% DC and RF tested to assure quality and performance. Applications Repeaters Mobile Infrastructure Defense/Aerospace LTE / WCDMA / EDGE / CDMA General Purpose Wireless IF amplifier, RF driver amplifier Applications Circuit RFin C1 BBA02 L1 C3 C4 C2 RFout 0.04~ ~ ~ ~ ~6.0 C1 1nF 100pF 10pF 10pF 10pF C2 1nF 100pF 10pF 10pF 10pF C3 100pF 100pF 100pF 100pF 100pF C4 1nF 1nF 1nF 1nF 1nF L1 470nH 39nH 15nH 8.2nH 4.7nH +5V Typical Performance 1 Parameter Frequency Unit 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system. Absolute Maximum Ratings MHz Gain db S db S db OIP dbm P1dB dbm LTE 20M ACLR dbm Noise Figure db 2 OIP3 _ measured on two tones with a output power 5dBm/ tone, F2 F1 = 1 MHz. *ACLR Channel Power measured at -50dBc. - LTE set-up: 3GPP LTE, FDD E-TM3.1, 20MHz BW, ±20MHz offset, PAR 9.75 at 0.01% Prob. Min. Typical Max. Unit Bandwidth MHz I (Vd = 5V) ma V d 5.0 V dg/dt db/ C R TH 53.5 C/W Operating Case Temperature C Parameter Rating Unit Storage Temperature -55 to +155 C Junction Temperature +220 C Operating Voltage +7 V Supply Current 190 ma Input RF Power 20 dbm Operation of this device above any of these parameters may result in permanent damage. 1

2 V-I Characteristics Typical Device Data S-parameters (Vd=5V, Id=90mA, T=25 C) 2

3 (Vdevice = 5.0V, I d = 90mA, T = 25 C, calibrated to device leads) S-Parameter Freq S11 S11 S21 S21 S12 S12 S22 S22 [MHz] [Mag] [Ang] [Mag] [Ang] [Mag] [Ang] [Mag] [Ang]

4 Application Circuit: 70 MHz Schematic Diagram BOM Tolerance C3 C4 +5V C1 1nF ± 5% RFin L1 RFout C2 1nF ± 5% C3 100pF ± 5% C1 BBA02 BL022 C2 C4 1nF ± 5% L1 470nH ± 5% Typical Performance 4

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6 Application Circuit: 900 MHz Schematic Diagram BOM Tolerance C3 C4 +5V C1 100pF ± 5% RFin L1 RFout C2 100pF ± 5% C3 100pF ± 5% C1 BBA02 BL022 C2 C4 1nF ± 5% L1 39nH ± 5% Typical Performance 6

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8 Application Circuit: 1900 MHz Schematic Diagram BOM Tolerance C3 C4 +5V C1 100pF ± 5% RFin L1 RFout C2 100pF ± 5% C3 100pF ± 5% C1 BBA02 BL022 C2 C4 1nF ± 5% L1 39nH ± 5% Typical Performance 8

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10 Application Circuit: 2140 MHz Schematic Diagram BOM Tolerance C3 C4 +5V C1 100pF ± 5% RFin L1 RFout C2 100pF ± 5% C3 100pF ± 5% C1 BBA02 BL022 C2 C4 1nF ± 5% L1 39nH ± 5% Typical Performance 10

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12 Application Circuit: 2650 MHz Schematic Diagram BOM Tolerance C3 C4 +5V C1 100pF ± 5% RFin L1 RFout C2 100pF ± 5% C3 100pF ± 5% C1 BBA02 BL022 C2 C4 1nF ± 5% L1 39nH ± 5% Typical Performance 12

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14 Application Circuit: 3500 MHz Schematic Diagram BOM Tolerance C3 C4 +5V C1 10pF ± 5% RFin L1 RFout C2 10pF ± 5% C3 100pF ± 5% C1 BBA02 BL022 C2 C4 1nF ± 5% L1 15nH ± 5% Typical Performance 14

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16 Application Circuit: 4650 MHz Schematic Diagram BOM Tolerance C3 C4 +5V C1 10pF ± 5% RFin L1 RFout C2 10pF ± 5% C3 100pF ± 5% C1 BBA02 C2 C4 1nF ± 5% L1 8.2nH ± 5% Typical Performance 16

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18 Application Circuit: 5800 MHz Schematic Diagram BOM Tolerance C3 C4 +5V C1 10pF ± 5% RFin L1 RFout C2 10pF ± 5% C3 100pF ± 5% C1 BBA02 C2 C4 1nF ± 5% L1 4.7nH ± 5% Typical Performance 18

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20 PCB Land Pattern PCB Mounting Note : All dimension _ millimeters PCB lay out _ on BeRex website 20

21 Package Marking Tape & Reel SOT89 Packaging information: Tape Width (mm): 12 Reel Size (inches): 7 YY = Year, WW = Working Week, XX = Wafer No. Device Cavity Pitch (mm): 8 Devices Per Reel: 1000 Lead plating finish 100% Tin Matte finish (All BeRex products undergoes a 1 hour, 150 degree C, Anneal bake to eliminate thin whisker growth concerns.) MSL / ESD Rating ESD Rating: Value: Test: Standard: Class 0 Passes <200V Human Body Model (HBM) JEDEC Standard JESD22-A114B MSL Rating: Standard: Level 1 at +265 C convection reflow JEDEC Standard J-STD-020 NATO CAGE code: 2 N 9 6 F 21

Preliminary Datasheet

Preliminary Datasheet Device Features Low Noise Figure: NF = 0.95 @ 1900MHz High Linearity: OIP3 = 36 dbm @ 1900 MHz Output P1 db = 22 dbm @ 1900 MHz Gain = 17 db @ 1900 MHz Internally matched to 50 ohms Vdd: 5.0V Lead-free/RoHS-compliant