Outgas Testing Update on EUV Light vs. Electron beam

Transcription

1 Outgas Testing Update on EUV Light vs. Electron beam Toshiya Takahashi, Norihiko Sugie, Kazuhiro Katayama, Isamu Takagi Yukiko Kikuchi, Eishi Shiobara, Hiroyuki Tanaka, Soichi Inoue EUVL Infrastructure Development Center, Inc.

2 Outline 1. Introduction : EIDEC Resist Outgassing Program 2. Exposure Tools : EUV Light and Electron beam 3. Current Status of Resist Qualification System 4. Schedule 5. First Results 2

3 EIDEC Resist Outgassing Control Program Mission To function as resist outgas qualification center. To check the reliability of resist outgas qualification system by comparing EUV light and Electron beam(eb), as method. To propose guidelines for resist material designs. Member : FUJIFILM, JSR, SanDisk, Shin-Etsu, TOK, TOSHIBA 3

4 Tool 1: High Power EUV Exposure Tool (located in Hyogo) Long Undulator Exposed Wafer (200mmφ) BL09 Undulator Undulater Light light New SUBARU Storage Ring Θ ー X Stages Resist sample 85mW/cm mW/cm 2 Witness Sample (Ru/Multilayer) HERC analysis tool (High power EUV Resist Contamination) 25mmφ Exposed Area Base Pressure 2~4 E -6 Pa Exposure Pressure 1~2 E -5 Pa 4

5 Tool 2: EB based Tool EUVOM-9000 (located in Tsukuba) EB EB Resist Witness Sample Exposed Wafer (300mmφ) Contamination Growth Measured by SE on WS Base Pressure 2~4 E -6 Pa Exposure Pressure 1~2 E -5 Pa 5

6 Current Status of Resist Qualification System We are planning to start resist qualification test in Q /b 6

7 Process Flow & Infrastructure Wafer Process WS Process Resist ACT12 #1 or #2 Cleaner Resist Thickness E0 EUVOM-9000 Contamination Growth Contamination Film Thickness EUVOM-9000 (LTJ) with Cleaner #1 Stand Alone Cleaner #2 (EUV Technology) E0 Development & Resist Contamination Film #1 or #2 Cleaner E0 Thickness Non-cleanable Film SE M-2000X (J.A.Woollam) XPS Estimated throughput for qualification : 30~40 samples/month 7

8 Program Schedule FY EB based outgas evaluation Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Tool installation Procedure Fix Resist Outgas Qualification Correlation EUV vs. EB 1st Correlation EUV vs. EB 2nd Correlation EUV vs. EB Criteria for 20~16nmhp EUV based outgas evaluation Collaboration with Univ. of Hyogo Tool enhancement Preliminary Evaluation Non-cleanable component analysis Clarifying issues for 11nmhp 8

9 First Results 9

10 HERC with Undurator Dose to Clear Comparison High Power EUV (mj/cm2) High Power EUV (mj/cm2) Dose to Clear (E0) Low Power EUV vs. High Power EUV Dose to Clear (E0) EB vs. High Power EUV 8.0 Methacrylate 8.0 Methacrylate PHS PHS 4.0 Hybrid Hybrid Hybrid Hybrid Low Power EUV (mj/cm2) EB-gun (uc/cm2) Energetiq source (10W / 2πsr) EUVOM-9000 Linear correlation between High Power EUV and Low Power EUV was observed. Clear correlation between High Power EUV and EB was not observed. In this study, we used the resist E0 measured for each tools, respectively. 10

11 High Power EUV (nm) Dose=2.5xE0, Area=12inch Cleanable Contamination Comparison Correlation of Contamination Thickness High Power EUV Electron Beam Hybrid-1 (Large PAG) Hybrid-1 PHS Methacrylate Hybrid Measured with Spectroscopic ellipsometer EB (nm) Dose=E0, Area=12inch Based on the obtained resist E0, linear correlation of cleanable contamination was confirmed between High Power EUV and EB. 11

12 Residual Element (atomic %) Residual Element (atomic %) Non-cleanable Contamination Comparison on exposed area Non-cleanable contaminations were investigated with XPS analysis S Si Zn F P W High Power EUV non-cleanable contamination <0.1 <0.1 <0.1 <0.1 Methacrylate resist <0.1 <0.1 <0.1 S Si Zn F P W Electron Beam The presences of Sulfur and Silicon were confirmed on both High Power EUV and EB samples. Correlation of non-cleanable contamination was acceptable on exposed area. 12

13 Residual Element (atomic %) Residual Element (atomic %) Non-cleanable Contamination Comparison on un-exposed area On un-exposed area, non-cleanable contaminations were also investigated <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 S Si Zn F P W A large amount of Fluorine was detected only on un-exposed area of High Power EUV sample. The presence of Fluorine was not clearly observed on un-exposed area of EB sample, in this study. 4.6 S Si Zn F P W High Power EUV Exposed Area Un-exposed Area Electron Beam <0.1 <0.1 <0.1 <0.1 <0.1 <0.1 Methacrylate resist Un-exposed Area Exposed Area 13

14 Acknowledgement This work was supported by NEDO (New Energy and Industrial Technology Development Organization). 14

15 Thank You 15