XIAOHANG LI Basic Info Education Ph.D., Georgia Institute of Technology, GA, USA Certificates of MBA Courses, University of Pennsylvania, PA

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1 XIAOHANG LI Basic Info Xiaohang Li, Ph.D. Principal Investigator of Advanced Semiconductor Laboratory (ASL) Assistant Professor of Electrical Engineering (EE) Division of Computer, Electrical, Mathematical Science and Engineering (CEMSE) King Abdullah University of Science and Technology (KAUST) Thuwal, Saudi Arabia Phone: Website: Education Ph.D., Georgia Institute of Technology, GA, USA Ph.D. in Electrical & Computer Engineering with minors in Material Science and Engineering and Business Thesis title: III-nitride ultraviolet laser Research: growth, characterization, fabrication, and simulation of III-nitride materials, nanostructures and devices applicable for photonics, optoelectronics, power electronics and biosensors Major achievement: created the state-of-the-art deep UV laser and the first deep UV laser below 260 nm on sapphire substrates; set up $2M sophisticated research equipment (MOCVD) Certificates of MBA Courses, University of Pennsylvania, PA Graded MBA courses including Accounting, Operation, Marketing, Corporate Finance at Wharton School through a MOOC program M.S., Lehigh University, PA, USA Research Assistant and M.S. in Electrical Engineering Research: growth, characterization, fabrication, and simulation of III-nitride materials, nanostructures and devices applicable for inorganic and organic optoelectronics Major achievement: developed a high-throughput and low-cost method to increase efficiency of visible LEDs and OLEDs by up to 2.7 times. B.S., Huazhong University of Science and Technology, China B.S. in Applied Physics with the highest honor Major achievement: invented the 1 st magnet detector based on magnetic fluid Professional Experience 02/2016-Present, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia Assistant Professor of Electrical Engineering, Division of Computer, Electrical, Mathematical Science and Engineering (CEMSE) Principal Investigator of Advanced Semiconductor Laboratory Publication Summary >100 papers and conference presentations/proceedings in leading journals and conferences Two book chapters Six issued and pending patents Google Scholar citations: 1180, h-index: 15 Reviewer of numerous journals including Nature Photonics, Applied Physics Letter, Optics Express, IEEE Electron Device Letters, Nanoscale, Physica Status Solidi, IEEE Photonics Journal, Journal of Selected Topics in Quantum, etc. 1

2 Selected Awards and Honors Editor s Select, Applied Physics Letter, 2016 Georgia Tech representative, Global Young Scientist Summit, 2015 Graduate Student Fellowship, IEEE Photonics Society, 2014 (10 recipients worldwide) Steve W. Chaddick Fellowship, Georgia Institute of Technology, 2014 Anne Robinson Clough International Student Grant, Georgia Institute of Technology, 2014 D. J. Lovell Scholarship, SPIE, 2013 (highest award from SPIE with one recipient worldwide) Edison Prize, Georgia Institute of Technology, 2013 (Highest award for graduate students at GT) Insight Engineering & Science Program, McKinsey & Company, 2013 Bridge to BCG Program, Boston Consulting Group, 2013 Most Commercializable Prize, Georgia Institute of Technology, 2013 Best Product Showcase Prize, Georgia Institute of Technology, 2013 Innovation Alley, Lehigh Valley, TED x, 2013 Immigrant Innovator and Entrepreneur Awarding Ceremony, the White House, 2013 First Place of Elevator Pitch Competition, Georgia Institute of Technology, 2012 Michael W Levin 87 Advanced Technology Award, Lehigh University, 2012 Works Featured in Media 1. Keeping the heat out, KAUST Discovery o 2. Researchers Reveal Secrets of Metalorganic Preflow for AlN MOCVD Process, Compound Semiconductor o 3. Faculty Focus: Xiaohang Li, KAUST News o 4. KAUST Team Reveals Thermodynamic Disorder In GaN Nanowires, Compound Semiconductor o 5. Thermodynamic disorder in GaN-based nanowires, Nanowerk o 6. Researchers Simplify Fabrication Of Nanowire UV-LEDs On Silicon, Compound Semiconductor o 7. UV LEDs: solving the droop issue, EE Times Europe o 8. KAUST Team Grows Droop-Free UVLEDs On Metal/Silicon Substrate, Compound Semiconductor o 9. Growing thicker, more boron rich BAlN, Compound Semiconductor o Sapphire substrates slash the cost of deep UV lasers, Editorial of Compound Semiconductor o CloudSolar Helps Renewable Energy Fans Who Can t Install Their Own Solar Panels, Techcrunch o Startup selling solar panels in the cloud, not on your roof, Boston Globe o Ga Tech Team Demonstrates Deep UV Lasers On Sapphire, Compound Semiconductor 2

3 Engineering of Georgia Tech o o Award Winners, covered by IEEE o Guest Blog: UV LED for Revolutionizing Water Purification, Edison Innovation Foundation o Graduate Engineering Student Make Strong Showing at GT Research and Innovation Conference, School of SPIE announces 2013 scholarship recipients, SPIE o Xiaohang Li Tapped for Prestigious SPIE Scholarship, Georgia Tech o Winning Companies, Lehigh University o Scientific Community Leadership Experience President of IEEE Photonics Society Chapter, Lehigh University Treasurer of IEEE Photonics Society Chapter, Lehigh University Significantly increased the number of members and events Professional Membership IEEE, IEEE Photonics, SPIE, MRS, OSA Research Experience 1. Feb 16 Present, King Abdullah University of Science and Technology, Thuwal, Saudi Arabia Principal Investigator (PI), Advanced Semiconductor Laboratory Set up state-of-the-art research equipment (MOCVD) Led university, vendor, and contractor teams to install, test and calibrate $2.5M state-of-the-art semiconductor research equipment including Taiyo Nippon Sanso (TNS) MOCVD and excimer laser from scratch Electron transport in quasi-1d semiconductor Advised graduate students to study the electron transport mechanism in quasi-1d wide bandgap semiconductor structures and characterized surface absorption Semiconductor UV LEDs Advised graduate students to study how to improve radiative, injection and extraction efficiencies of UV LEDs 2. Jul 11 Aug 15, Georgia Institute of Technology, Atlanta, GA Research Assistant, Material and Device Studies of III-Nitride Semiconductors Set up state-of-the-art research equipment (MOCVD) Led the university, vendor, and company teams to install, test and calibrate $2M state-of-the-art semiconductor research equipment including Aixtron MOCVD and excimer laser from scratch Low temperature MOCVD growth of AlN templates on sapphire substrates Studied temperature dependence of AlN growth at sub high temperature range ( o C) Proposed a new way that does not require high temperature to grow quality AlN templates on sapphire The proposed method is applicable for most of the modern MOCVD which don t have high temperature (> 1200 o C) capability III-nitride deep UV laser Optimized the laser structure to reduce the emission wavelength and threshold Successfully grew and fabricated the currently state-of-the-art deep UV laser Demonstrated the first low threshold deep UV laser on the sapphire substrate 3

4 This study was highlighted in Compound Semiconductor GaN rectifier Optimized the annealing process to enhance the breaking voltage of GaN rectifier that has been ion implanted 2. Apr 12 Dec 12, XQUVA LLC, Atlanta, GA Cofounder, Application of Optoelectronic Technology in Water Purification Novel water purification technology Researched how to use the latest optoelectronic technologies in the water purification Conducted the first water purification experiment by using the blue laser, which achieved a one-log reduction of E. Coli within the short time Wrote Small Business Innovation Research (SBIR) grant application and established collaboration with Atlanta s Department of Watershed Management and Georgia Tech Research Institute 3. Jul 08 May 11, Lehigh University, Bethlehem, PA Research Assistant, Material and Application Studies of III-Nitride Semiconductors Novel quantum wells for phosphor-free white light LEDs Proposed and grew phosphor-free novel quantum well structure to realize white light emission by engineering polarization field of InGaN quantum wells without tuning the quantum well thickness and Indium contents Studied GaN regrowth temperature dependence of QW white light luminescence High light extraction efficiency LEDs and OLEDs Developed clean-room deposition of dielectric microsphere monolayer on various substrates Deposited index-matched SiO 2 /polystyrene & TiO 2 microlens on emitting surface of LEDs Set up far-field EL measurement for radiation patterns Enhanced light extraction efficiency of OLED by more than 1.5 times Enhanced light extraction efficiency of LED by more than times Wrote DOE monthly report (DOE project, NETL, DE-PS26-08NT00290) Abbreviated GaN growth mode on nano-patterned sapphire for enhanced efficiency LEDs and reduced threading dislocation density by MOCVD Conducted nucleation and coalescence study of GaN grown on nano-patterned and planar sapphire substrates Reduced threading dislocation density of GaN template from /cm 2 to /cm 2 characterized by TEM Increased total carrier lifetime of InGaN QWs from 35ns to 44ns by reducing non-recombination rate characterized by time-resolved photoluminescence Enhanced LEDs output power by 37% Shortened GaN growth time by ~30 min by bypassing etch-back and recovery process Nonpolar a-plane GaN Growth on r-sapphire Substrate Established and optimized growth recipe for high quality surface-undulation-free and pits-free a-plane GaN grown on planar r-sapphire substrate by nitridation growth mode and pulse-ga growth mode, respectively Optimized recipe for a-plane GaN grown on nano-patterned r-sapphire substrate GaN growth on SiO 2 -microsphere-patterned GaN template by MOCVD Developed recipe of GaN growth for surface-undulation-free and fully-coalesced by employing three-step growth mode Studied pressure, growth time and temperature dependence of coalescence and surface undulation of regrown GaN on the SiO 2 -microsphere-patterned GaN template GaN growth on sol-gel patterned c-sapphire substrate by MOCVD Optimized GaN growth recipe on sol-gel patterned sapphire substrate with different self-assembly and manmade patterns Studied low temperature GaN buffer layer growth time dependence of GaN coalescence at high temperature Staggered InGaN QWs LEDs for high internal quantum efficiency in green spectrum Assisted in developing staggered InGaN QW structure for high electron-hole wavefunction overlap and enhanced internal quantum efficiency Conducted low-temperature photoluminescence to determine internal quantum efficiency of InGaN QWs Carried SEM microscopy to determine surface morphology of staggered InGaN QWs 4

5 First principle calculation of band structure of dilute-as GaNAs and polarization of InN and GaN Performed band structure calculation of dilute-as GaNAs (up to 6.3% As) Found dilute-as GaNAs compounds have direct bandgap that cover the whole visible spectrum, which makes dilute-as GaNAs candidate for active regions of LED and laser. Calculated spontaneous polarization and piezoelectric of InN and GaN by Berry Phase method 4. Mar 07 Jun 08, Wuhan National Laboratory for Optoelectronics, Wuhan, China Research Assistant, First Principle Calculation of GaN & InGaN with Defects and TEM Sample Preparation Investigated the band structure and density of states of GaN and InGaN with different numbers of vacancy defects by first principle Prepared the TEM samples of InGaN QWs Assisted GaN growth by Aixtron 3 2" MOCVD Assisted the study of laser lift-off, grid electrodes and surface patterning of LED technology 5. Sep 05 Feb 07, National Instruments & HUST Joint Laboratory, Wuhan, China Research Assistant, Preparation and Application of Magnetic Fluids Prepared Fe 3 O 4 nano-particle and water based magnetic fluid Invented the world s first magnetic field direction detector based on the magnetic fluid, which provided a novel way for magnetic detection in addition to traditional Hall effect-based detectors Patent filed and issued Research Funding Programs 1. Fundamental studies of BAlN and BGaN wide bandgap semiconductors; PI: Xiaohang Li; Source of Support: GCC Research Council; Award Amount: $240,000; Period: 01/01/ /31/ Low cost, high stability and high efficiency monolithic solar hydrogen fuel nano-generator; PI: Boon Ooi; Source of Support: SABIC; Award Amount: $450,000; Period: 09/01/ /31/ KAUST baseline fund; PI: Xiaohang Li; Source of Support: KAUST; Award Amount: $400,000/year; Period: 01/31/ /31/ KAUST startup fund; PI: Xiaohang Li; Source of Support: KAUST; Award Amount: $700,000; Period: 01/31/ /31/2018 Below are the programs funding my study and research before I became a faculty at KAUST: 5. Collaborative Research: Fundamental Studies of the Properties of B-III-N Wide-Bandgap Semiconductor Alloys; PI: Russell D. Dupuis; Source of Support: NSF; Award Amount: $300,000; Period: 07/01/ /30/ Advanced Middle-UV Coherent Optical Sources; PI: Russell D. Dupuis; Source of Support: DARPA; Award Amount: $2,000,000; Period: High Efficiency Organic Lighting Emitting Devices for Lighting; PI: Nelson Tansu; Source of Support: DOE; Total Award Amount: $ 950,000; Period: 07/01/ /30/ Investigation of Microsphere Convective Deposition for Photonic, Biological, and Materials Applications; PI: Nelson Tansu; Source of Support: NSF; Award Amount: $ 300,000; Period: 08/15/ /14/ Nanostructure Engineering of III-Nitride Active Regions for High- Performance Visible Emitters and Lasers; PI: Nelson Tansu; Source of Support: NSF; Award Amount: $ 270,000; Period: 07/01/ /30/ FRG: Nano-patterning of Sapphire Substrates for Improved III-Nitride Growth; PI: Nelson Tansu; Source of Support: NSF; Award Amount: $ 320,000; Period: 08/15/ /14/2010 Service & Leadership Academic committee 1. International Program Committee of International Conference of Metalorganic Vapor Phase Epitaxy (ICMOVPE 2018) June 3-8, 2018 Nara, Japan As an invited organizer, I solicit abstract submissions to the conference, review abstract submission and participate in the establishing the technical schedule. 5

6 2. International Program Committee of International Workshop on Nitride Semiconductors (IWN 2018) Program: Crystal Growth November 11-16, 2018 Kanazawa, Japan As an invited organizer, I solicit abstract submissions to the conference, review abstract submission and participate in the establishing the technical schedule. 3. Technical Committee of Electronic Material Conference (EMC) 2017 June 12-14, 2017 South Bend, IN, USA As an invited organizer in the III-nitride area, I solicit abstract submissions to the conference, review abstract submission and participate in the establishing the technical schedule. 4. Technical co-chair of KAUST-NSF Research Conference on Interactive Electronics 2017 January 30-Febuary 1, 2017 KAUST, Saudi Arabia As the technical co-chair, I co-organized the conference including solicited speakers and organized the poster competition. Conference session chairing 1. SPIE Optics and Photonics San Diego, CA, USA, August 2017 Session Title: UV and Higher Energy Materials and Light Sources 2. Electronic Material Conference (EMC) South Bend, IN, USA, June 2017 Session Title: Nitride Wide Bandgap Epitaxy 3. International Workshop on Nitride Semiconductors (IWN) Orlando, FL, USA, October 2016 Session Title: Epitaxial Growth of (Al,Ga)N Academic thesis committee Doctoral thesis 1. Committee member, Bilal Janjua, Electrical Engineering, KAUST, April 2017 Thesis title: Nitride-based quantum-confined structures for ultraviolet-visible optical devices on silicon substrates Advisor: Prof. Boon Ooi Post-graduation career: postdoctoral fellow at University of Toronto 2. Committee member, Aftab Hussain, Electrical Engineering, KAUST, November 2016 Thesis title: Extending Moore s Law for silicon CMOS using more-moore and more-than-moore technologies Advisor: Prof. Muhammad Hussain Post-graduation career: postdoctoral fellow at Harvard University 3. Committee member, Hang Li, Materials Science and Engineering, KAUST, June 2016 Thesis title: Spin orbit torque in ferromagnetic semiconductors Advisor: Prof. Aurelien Manchon Post-graduation career: postdoctoral fellow at University of New Hampshire Doctoral proposal 1. Committee member, Bilal Janjua, Electrical Engineering, KAUST, June 2017 Proposal title: High-Resolution and High-Sensitivity Spectroscopy in the Mid-Infrared Region for Gas sensing Advisor: Prof. Bidoor Alsaif Master thesis 1. Committee member, Yahya Zakaria, Materials Science and Technology, Qatar University, 2017 Thesis title: Er-doped III-nitride Semiconductors 6

7 Advisor: Prof. Talal Al Tahtamouni Post-graduation career: Employed at Qatar University 2. Committee member, Yahya Zakaria, Electrical Engineering Program, KAUST, 2017 Thesis title: Approximate Computing Using Memristors Advisor: Prof. Khaled Salama Post-graduation career: TBD Student recruiting 1. Created and Operate Admin Platform of Wechat for Electrophysics Track May 2016-Present Wechat is the largest social media platform in China. I created the first Admin Platform for electrophysics track to post announcement to recruit students. Link: 2. Manage KAUST s largest online community in China Oct 2015-Present This part is hidden due to the anonymity requirement. The information can be provided upon request. KAUST Tieba is the largest online forum of perspective KAUST Chinese students for full-time and intern positions. The students post all kinds of questions from living, studying to researching at KAUST. I am the only KAUST employee who is handling the requests and questions. I have answered more than one thousand questions, and have encouraged numerous students to apply to KAUST and accept the offers. Link: 3. KAUST Photonics Summer School March 2016-Present I have worked with Profs Andrea Fratalocchi and Boon Ooi, and Assistant Dean to establish the school to attract the students all over the world to join the photonics research at KAUST, including recruiting students, teaching, organizing events, etc. 4. KAUST blog website July 2016-Present I have worked with KAUST Process & Technology Department (IT) to improve and streamline the designs and structures of blog websites. 5. KAUST CEMSE and EE website Sep 2016-Present I have advised the contractor about how to improve the CEMSE and EE websites. 6. Recruit top undergraduate students to KAUST Dec 2015-Present I have developed the first-of-its-kind program in Electrical Engineering at KAUST to attract top-ranked students from top universities to do internship in the last year of their study for 4-6 months. The long period of internship ensures that the students can know KAUST very well and achieve research traction that will become a large incentive for them to come to KAUST for graduate studies. The long period of internship also helps the faculty to make most use of their funds. 1) Ruan Viljoen, Prof Andrea Fratalocchi, Fall 16 Cum Laude in Laser Physics, University of Stellenbosch, South Africa 2) Zhendong Zhang, Prof Andrea Fratalocchi, Fall 16 Rank 1/150 (0.6%) in Applied Physics, Huazhong University of Science and Technology (HUST) 3) Yang Zhong, Prof Mohamed-Slim Alouini, Fall 16 Rank 9/341 (2.6%) in Optoelectronic Information Science and Engineering, Huazhong University of Science and Technology (HUST) 4) Yu Yue, Prof Boon Ooi, Spring 16 Rank 17/341 (5.0%) in Optoelectronic Information Science and Engineering, Huazhong University of Science and Technology (HUST) 5) Muwei Zhang, Prof Xiaohang Li, Fall 16 Rank 10/186 (5.4%) in Electronic Science and Technology, Huazhong University of Science and Technology (HUST) 6) Wenzhe Guo, Prof Xiaohang Li, Fall 16 Rank 1/95 (1%) in Integrated Circuit Design and Integrated System, University of Electronic Science and Technology of China (UESTC) 7

8 7) Huafan Zhang, Prof Boon Ooi, Fall 16 Rank 3/230 (1.3%) in Electronic Science and Technology, University of Electronic Science and Technology of China (UESTC) 8) Yujian Guo, Prof Boon Ooi, Fall 16 Rank 23/230 (10%) in Microelectronics, University of Electronic Science and Technology of China (UESTC) 9) Xinyu Zhang, Prof Jurgen Kosel, Fall 16 Rank 5/60 (8.3%) in Chemical Engineering, University of Electronic Science and Technology of China (UESTC) 10) Han Xu, Prof Hossein Fariborzi, Fall 16 Rank 3/230 (2.2%) in Microelectronics, University of Electronic Science and Technology of China (UESTC) 11) Haoran Zhang, Prof Khaled Salama, Fall 16 Rank 10/95 (10.5%) in Microelectronics, University of Electronic Science and Technology of China (UESTC) Teaching/Mentoring Experience I have a wide range of teaching and mentoring experiences both inside and outside the classroom. Teaching 1. Instructor, Electrical Engineering, King Abdullah University of Science and Technology Fall 2016-Present EE 298 Graduate Seminar Student feedbacks: Your presentation yesterday was great! Actually it was the only presentation that I could concentrate from the beginning to the end so far. I am writing this to thank you for your seminar today. I was so inspired by your story and the tips you gave. It is so far the best lecture I ever attended in KAUST. I believe that your story must be shared with the larger community of KAUST and I know that many of my friends would love to attend. So please let me know if you will ever give this lecture again. 2. Instructor, Electrical Engineering, King Abdullah University of Science and Technology Fall 2016-Present EE 206 Device Physics Anonymous course review of Fall 2016: Overall quality: 4.57/5.00 Overall teaching effectiveness: 4.71/5.00 Very good instructor, teaching style is student oriented. The whole course is well organized almost step-bystep learning. The instructor does very well job at preparing for the lecture and making the expectations clear from both the students and himself. The quizes although hectic, give you the opportunity to learn material that is hard to cover on the midterm. I also believe the professors lecture notes were great. I like to way he make the class active and always let student participate. The concepts of quantum mechanics is covered in this course. It helped me to lay the foundation for the future work. 3. Guest blogger for Thomas Edison Innovation Foundation, Newark, NJ Summer 2013-Present Educate the foundation s readers, mainly K-12 students and parents, about the latest research and technologies. The foundation has 99,310 followers in Facebook. 4. Instructor for Ph.D. preliminary exam, Georgia Tech, Atlanta, GA Fall 2011 Taught 15 graduate students who were not familiar with microsystem and electromagnetics about the basic principles, knowledge, and practices Made quiz to prepare them for the Ph.D. preliminary exam All the students I taught passed the exam 5. Instructor of K-12 outreach programs, Georgia Tech & Lehigh University 2009-Present Please refer to the Outreach Lectures and Seminars as below 8

9 6. Instructor of Shuren High School, Wuhan, China Spring 2006 Most of the students parents were farmers coming to cities for a job. Thus the parents had very low income and poor education background Taught 40 students high school physics Help the students navigate difficulties and pressure in the real life 7. Teaching assistant of undergraduate course C++, HUST, Wuhan, China Spring 2006 Assisted the lecturer to help 30 students on their homework and knowledge Organized exam workshops to prepare the students for the mid-term and final exam 8. Advising and Mentoring Mentoring experience is described through the students or organizations I have advised, which does not include the junior students (10+) I mentored in my previous labs at Lehigh and Georgia Tech for research skills and career development. 1) Che-Hao Liao (Postdoctoral fellow) September 2017-Present Haiding is a postdoctoral fellow at KAUST advised by me. He received his PhD in Photonics and Optoelectronics at National Taiwan University, under the supervision of Prof C. C. Yang. 2) Wenzhe Guo (PhD student) June 2017-Present Wenzhe is a PhD student at KAUST advised by me. He received his BS degree in Integrated Circuit Design and Integrated System from University of Electronic Science and Technology of China (UESTC), China. 3) Hamad Alotaibi (MS student) August 2017-Present Hamad is an MS student at KAUST advised by me. He received his BS degree in Electrical Engineering from King Fahd University of Petroleum and Minerals (KFUPM), KSA. 4) Kaikai Liu (Intern student) July 2017-Pressent Kaikai is an undergraduate student at KAUST advised by me. He is pursuing his BS degree in Applied Physics from Huazhong University of Science and Technology, China. 5) Xinwei Liu (Intern student) July 2017-Pressent Muwei is an undergraduate student at KAUST advised by me. He is pursuing his BS degree in Electronic Science and Technology from Huazhong University of Science and Technology, China. 6) Sergio Valdes (Intern student) June 2017-Pressent Sergio is an undergraduate student at KAUST advised by me. He is pursuing his BS degree in Mechanical and Electrical Engineering from Instituto Tecnologico de Monterrey, Mexico. 7) Carlos Torres (Intern student) May 2017-Pressent Carlos is a graduate student at KAUST advised by me. He received his MS degree at Center for Research and Advanced Studies of the National Polytechnic Institute (CINVESTAV), Mexico. 8) Fatimah Alowa (Intern student) May 2017-Pressent Fatimah is an undergraduate student at KAUST advised by me. She is pursuing her BS degree in Mechanical Engineering and Physics from Boston University, USA. 9) Abdulmohsen Alowayed (Intern student) May 2017-Pressent Fatimah is an undergraduate student at KAUST advised by me. He is pursuing her BS degree in Mechanical Engineering from Massachusetts Institute of Technology (MIT), USA. 10) Yangrui Hu (Intern student) January 2017-July 2017 Yangrui is an undergraduate student at KAUST advised by me. She is pursuing his BS degree in Applied Physics from University of Science and Technology of China (USTC), China. 11) Wenzhe Guo (Intern student) November 2016-July 2017 Wenzhe is an undergraduate student at KAUST advised by me. He is pursuing his BS degree in Integrated Circuit Design and Integrated System from University of Electronic Science and Technology of China (UESTC), China. 12) Raheef A. Aljefri (Capstone student) October 2016-Present Renad is an undergraduate student at KAUST advised by me. She is pursuing his BS degree in Electrical Engineering from Effat University, KSA. 9

10 13) Esraa Alghamdi (Capstone student) October 2016-Present Esraa is an undergraduate student at KAUST advised by me. She is pursuing his BS degree in Electrical Engineering from Effat University, KSA. 14) Sarah Alsaggaf (MS student) September 2016-Feburary 2017 Sarah is a PhD student at KAUST advised by me. She obtained his BS degree in Physics from King Abdulaziz University, KSA. 15) Altynay Kaidarova (MS student) September 2016-January 2017 Altynay is a PhD student at KAUST advised by me. She obtained his BS degree in Electronics and Communication from University of Liverpool, UK. 16) Ronghui Lin (PhD student) August 2016-Present Ronghui is a PhD student at KAUST advised by me. He obtained his MS degree in Mechanical Engineering from University of Science and Technology of China (USTC), China. 17) Muwei Zhang (Intern student) August 2016-August 2017 Muwei is an undergraduate student at KAUST advised by me. He is pursuing his BS degree in Electronic Science and Technology from Huazhong University of Science and Technology, China. 18) Haiding Sun (Postdoctoral fellow) June 2016-Present Haiding is a postdoctoral fellow at KAUST advised by me. He received his PhD in Electrical Engineering at Boston University, USA, under the supervision of Prof Ted Moustakas. 19) Renad A. Aljefri (Intern student) June 2016-Present Renad is an undergraduate student at KAUST advised by me. She is pursuing his BS degree in Electrical Engineering from Effat University, KSA. 20) Hamad Alotaibi (Intern student) May 2016-January 2017 Hamad is an undergraduate student at KAUST advised by me. He is pursuing his BS degree in Electrical Engineering from King Fahd University of Petroleum and Minerals (KFUPM), KSA. 21) Kuang-Hui Li (PhD student) May 2016-Present Kuang-Hui is a PhD student at KAUST advised by me. He obtained his dual BS degrees in Physics and Mathematics from National Chiao Tung University, Taiwan. 22) Feng Wu (PhD student) March 2016-March 2017 Feng is an exchange PhD student at KAUST advised by me from Huazhong University of Science and Technology (HUST) and Wuhan National Laboratory for Optoelectronics (WNLO). He obtained his BS degree in Optoelectronics at HUST. He is currently working on novel quantum structures for high efficiency UV LEDs. 23) Nasir Alfaraj (PhD student) Feb 2016-Present Nasir is a Saudi PhD student at KAUST advised by me. He obtained his BS degree at West Michigan University and MS degree at KAUST, both in Electrical Engineering. He is currently working on electron transport in the quasi-1d III-nitride structures and devices. 24) Ibrahim Aldabbagh Mar 2016-July 2016 Ibrahim is studying in Electrical Engineering at University of California, San Diego (UCSD) under the KAUST Gifted Students Program (KGSP) Scholarship. 25) Christine Hang and Shauvik Choudhary Mar 2014-Dec 2016 Christine and Shauvik are a Vietnamese American and Indian students, respectively at Georgia Institute of Technology. I have advised them to start and run companies on their inventions regarding stroke risk reduction and reduction of configuration complexity across different Android platforms. With my help, they have grown the business and won the first place of ACC School Startup Madness and highest award of Georgia Tech Ideas 2 Serve Competition 26) Laura Mejia-Suarez Jan 2013-Jul

11 Laura is a Hispanic American student at Lehigh University. I have mentored her since her junior year academically and found her a paid internship in Atlanta, GA. Recently, my recommendation letter has helped her get into the graduate program at Lehigh University. 27) Khin Latt Jan 2013-Dec 2016 Kihn is from a small Southeast Asian country, Myanmar. He was a student at Lehigh University. I have mentored him academically since his junior year. Recently, I helped him to get a well-paid software engineering position in Atlanta. 28) Xian Qin Aug 2014-Oct 2014 Xian is a Chinese PhD student at Georgia Institute of Technology. I have mentored her to greatly improve the communication, interview skills and job application documents. She has recently obtained and accepted a fulltime offer from a top management consulting firm, McKinsey & Company. 29) Entrepreneurial Finance and Private Equity Program, Georgia Tech, Atlanta, GA Aug 2013-Oct 2013 Worked with four graduate students majored in Quantitative & Computational Finance Provided business and technical guidance and help them navigate the course challenge 30) Engineers for a Sustainable World Organization, Georgia Tech, Atlanta, GA Feb 2013-Dec 2013 Worked with this organization to develop non-profit water purification solutions for the 3 rd world Provided business and technical guidance and help them in fund raising Protected and commercialized intellectual properties created in this process 31) Integrated Product Development Program, Lehigh University, Bethlehem, PA Jan 2013-Dec 2013 Guided 12 undergraduate students to develop portable water purification products Established development strategy, goal and oversee their activities Help students protected and commercialized intellectual properties created in this process 9. Referees 1) Abeer Y. Al-Eryani Abeer was a specialist in the Office of Sponsored Research at KAUST. Recommendation letter was written for her PhD application in International Development. 2) Sara Poulai Sara was a PhD student at University of Houston. Recommendation letter was written for her green card application. 3) Bilal Janjua Bilal was a PhD candidate in Prof Boon Ooi s group at KAUST. Recommendation letter was written for his postdoc position application. He is a postdoctoral fellow at University of Toronto. 4) Wenzhe Guo Wenzhe was an undergraduate student in my group at KAUST. Recommendation letter was written for his graduate school application. He is now studying at KAUST for the PhD degree. 5) Muwei Zhang Muwei was an undergraduate student in my group at KAUST. Recommendation letter was written for his graduate school applications. 6) Zhendong Zhang Zhendong was an undergraduate student in Prof Andrea Fratalocchi s group at KAUST. Recommendation letter was written for his graduate school applications. He is now studying at University of Chicago for the PhD degree. 7) Hamad Alotaibi Hamad was an undergraduate student in my group at KAUST. Recommendation letter was written for his graduate school application. 8) Mojtaba Asadirad 8) Mojtaba was a PhD student at University of Houston. Recommendation letter was written for his green card application. K-12 Outreach Lectures and Seminars 11

12 Geared towards prospective middle and high school students 1. Lab Tour and Presentation for Optics Students, Georgia Institute of Technology, Atlanta, GA, March Lab Tour and Presentation for Optics Students, Georgia Institute of Technology, Atlanta, GA, July Semiconductor Nanotechnology for High Energy Efficient Applications, Outreach Program, OptoCamp 2008 Center for Optical Technologies, Lehigh University, Bethlehem, PA, August Research and Teaching Interests My research is positioned at the cross-roads of interdisciplinary electrical engineering, applied physics, material science and engineering, and biomedical engineering. Specifically, I am interested in the investigation of the physics, growth, fabrication, and characterization of semiconductor especially III-V optoelectronic and electronic devices. The device applications include visible LED and solar cells for energy saving and energy generation applications, UV LED and lasers for biomedical and communication applications, and FET, HFET, and HBT for power electronic applications. In addition, I am also interested in HFET based biochemical sensing and III-V-on-Si devices for post- Si computing chips. Fundamental knowledge from quantum mechanics, quantum electronics / optics, solid state physics, semiconductor physics, and electromagnetics will be used to solve problems related to semiconductor, optoelectronics and energy. In addition, I am interested in the development of extremely high temperature MOCVD reactors. As my academic pursuit started in applied physics which further extended into electrical engineering in the graduate school, my teaching interests encompass courses in the areas of basic physics, electromagnetics and electronic device fabrication (sophomore / junior), photonic and optoelectronic devices (graduate), applied quantum mechanics (graduate), physics of semiconductor devices (senior / graduate). My mentorship crosses graduate students, undergraduate students, K-12 students and K-12 educators. Other Professional Experience Invited Judge of Undergraduate Research Symposium, Georgia Tech Judge of Capstone Design Expo, Georgia Tech Tour guide of Scientific Facilities for Board of Trustee, Lehigh University Patents I am the primary inventor and contributor of those patents. 1. Broadband light emitting diodes and method for producing same (Issued) 2. Monolithic semiconductor light emitting devices and method of making the same (Issued) 3. A novel magnetic field detector (Issued) 4. Portable liquid purifying apparatus (Pending) 5. Susceptor device, chemical vapor deposition apparatus, and deposition methods (Pending) 6. Susceptor for induction heating with thermal uniformity (Pending) Book Chapters and Special Technical Reports 1. Chapter Four: III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors, Volume 4, Semiconductors and Semimetals series, Elsevier. 2. (Editorial) "Sapphire substrates slash the cost of deep UV lasers", Compound Semiconductor Magazine, June Chapter 16: Future Developments in MOVPE, Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications, Wiley, being edited. 12

13 Journal Publications 1. N. Alfaraj, M. M. Muhammed, K.-H. Li, B. Janjua, R. A. Aljefri, H. Sun, T. K. Ng, B. S. Ooi, I. S. Roqan, and X. Li, Thermodynamic photoinduced disorder in AlGaN nanowires, under review. 2. K.-H. Li, H. S. Alotaibi, H. Sun, R. Lin, W. Guo, C. G. Torres, K. Liu, S. V. Galan, and X. Li, Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling, under review. 3. R. Lin, H. Sun, Y. Wu, N. Alfaraj, K.-H. Li, W. Guo, M. Alowayed, and X. Li, "Optical mode analysis and enhanced Q factor in stealthy hyperuniform structure," under review. 4. H. Sun, C. G. T. Castanedo, K. Liu, K.-H. Li, and X. Li, Valence and conduction band offsets of β-ga2o3/aln heterojunction, under review. 5. H. Sun, F. Wu, Y. J. Park, T. M. Al tahtamouni, W. Guo, N. Alfaraj, K.-H. Li, D. H. Anjum, T. Detchprohm, R. D. Dupuis, and X. Li, Structural analysis of BAlN/AlGaN heterostructures, under review. 6. H. Sun, Y. Park, K.-H. Li, C. G. T. Castanedo, A. S. Alowayed, T. Detchprohm, R. D. Dupuis, and X. Li, Band alignment of B0.14Al0.86N / Al0.7Ga0.3N heterojunction, Appl. Phys. Lett. accepted (2017). 7. X. Sun, Z. Zhang, A. Chaaban, T. K. Ng, C. Shen, R. Chen, J. Yan, H. Sun, X. Li, J. Wang, J. Li, M.-S. Alouini, and B. S. Ooi, 71-Mbit/s Ultraviolet-B LED Communication Link based on 8-QAM-OFDM Modulation, Opt. Express, accepted (2017). 8. J. Hou, W. Hong, X. Li, C. Yang, and S. Chen, Biomimetic spiral grating for stable and highly efficient absorption in crystalline silicon thin-film solar cells, Opt. Express 25(20), A922-A931 (2017). 9. H. Sun, F. Wu, T. M. Al tahtamouni, N. Alfaraj, K.-H. Li, T. Detchprohm, R. D. Dupuis, and X. Li, Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate, J. Phys. D: Appl. Phys. 50, (2017). 10. S. Wang, X. Li, A. M. Fischer, T. Detchprohm, R. D. Dupuis, and F. A. Ponce, Crystal structure of BAlN thin films: effect of boron concentration in the gas flow, J. Cryst. Growth 475, 334 (2017). 11. A. Prabaswara, D. Stowe, B. Janjua, T. K. Ng, D. H. Anjum, P. Longo, C. Zhao, R. T. Elafandy, X. Li, A. Alyamani, M. El-Desouki, and B. S. Ooi, Spatially resolved investigation of competing nanocluster emission in quantum-disks-in-nanowires structure characterized by nanoscale cathodoluminescence, J. Nanophoton., 11(2), (2017). 12. M. Zhang and X. Li, Structural and Electronic Properties of Wurtzite B x Al 1-x N from First-Principles Calculations, Phys. Status Solidi B, 254 (8), (2017). 13. F. Wu, H. Sun, I. A. Ajia, I. S. Roqan, D. Zhang, J. Dai, C. Chen, Z. C. Feng, and X. Li, Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design, J. Phys. D: Appl. Phys., 50, (2017). 14. (Featured in Compound Semiconductor) H. Sun, F. Wu, Y. J. Park, T. M. Al tahtamouni, K.-H. Li, N. Alfaraj, T. Detchprohm, R. D. Dupuis, and X. Li, Influence of TMAl preflow on AlN epitaxy on sapphire, Appl. Phys. Lett. 110, (2017). 15. (Featured in Compound Semiconductor) N. Alfaraj, S. Mitra, F. Wu, I. Ajia, B. Janjua, A. Prabaswara, R. A. Aljefri, H. Sun, T. K. Ng, B. S. Ooi, I. S. Roqan, and X. Li, Photoinduced entropy of InGaN/GaN p-i-n doubleheterostructure nanowires, Appl. Phys. Lett. 110, (2017). 16. (Featured in Compound Semiconductor) X. Li, S. Wang, H. Liu, F. A. Ponce, T. Detchprohm, and R. D. Dupuis, 100-nm thick single-phase wurtzite BAlN films with boron contents over 10%, Phys. Status Solidi B 254 (8), (2017). 17. (Featured in Compound Semiconductor and EE Times) B. Janjua *, H. Sun *, C. Zhao, D. H. Anjum, D. Priante, A. A. Alhamoud, F. Wu, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, Droop-free Al x Ga 1-x N/Al y Ga 1-y N quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates, Opt. Express, 25, 2 (2017). 18. (Featured in Compound Semiconductor) B. Janjua *, H. Sun *, C. Zhao, D. H. Anjum, F. Wu, A. A. Alhamoud, X. Li, A. M. Albadri, A. Y. Alyamani, M. M. El-Desouki, T. K. Ng, and B. S. Ooi, Self-planarized quantumdisks nanowires ultraviolet-b emitter utilizing pendeo-epitaxy, Nanoscale 9, 7805 (2017). 13

14 19. (Editor's select) X. Li, H. Xie, J. H. Ryou, F. A. Ponce, T. Detchprohm, and R. D. Dupuis, Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells, Appl. Phys. Lett. 107, (2015). 20. X. Li, T. T. Kao, M. Satter, S. Wang, Y. Wei, H. Xie, S. C. Shen, P. D. Yoder, A. Fischer, and F. A. Ponce, T. Detchprohm, and R. D. Dupuis, Demonstration of transverse-magnetic dominant deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers on sapphire substrates, Appl. Phys. Lett. 106, (2015). 21. X. Li, Y. O. Wei, S. Wang, H. Xie, T. T. Kao, M. Satter, S. C. Shen, P. D. Yoder, T. Detchprohm, R. D. Dupuis, A. Fischer, and F. A. Ponce, Temperature dependence of crystalline quality of AlN layer grown on sapphire substrate by metalorganic chemical vapor deposition, J. Cryst. Growth 414, (2015). 22. X. Li, S. Wang, Y. O. Wei, H. Xie, T. T. Kao, M. Satter, S. C. Shen, P. D. Yoder, T. Detchprohm, R. D. Dupuis, A. Fischer, and F. A. Ponce, Growth of high-quality AlN layer on sapphire substrate at relatively low temperatures by metalorganic chemical vapor deposition, Phys. Status Solidi B 252, 2 (2015). 23. X. Li, G. Le Gac, S. Bouchoule, Y. El Gmili, G. Patriarche, S. Sundaram, P. Disseix, F. Réveret, J. Leymarie, J. Streque, F. Genty, J-P. Salvestrini, R. D. Dupuis, X. Li, P. L. Voss, and A. Ougazzaden, Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm, J. Cryst. Growth 432, 37 (2015). 24. (Featured in Compound Semiconductor) X. Li, T. Detchprohm, T. T. Kao, M. Satter, S. C. Shen, P. D. Yoder, R. D. Dupuis, S. Wang, Y. Wei, H. Xie, A. Fischer, F. A. Ponce, T. Wernicke, C. Reich, M. Martens, and M. Kneissl, Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates, Appl. Phys. Lett. 105, (2014). 25. M. M. Satter, Z. Lochner, T. T. Kao, Y. S. Liu, X. Li, S. C. Shen, J. H. Ryou, R. D. Dupuis, P. D. Yoder. AlGaN- Based Vertical Injection Laser Diodes Using Inverse Tapered p-waveguide for Efficient Hole Transport, IEEE J. of Quantum Electron. 50, 166 (2014). 26. M. M. Satter, Z. Lochner, T. T. Kao, Y. S. Liu, X. Li, S. C. Shen, J. H. Ryou, R. D. Dupuis, P. D. Yoder. Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high power opto and microelectronic applications, Phys. Status Solidi C 11, 828 (2014). 27. Y. S. Liu, Z. Lochner, T. T. Kao, M. M. Satter, X. Li, J. H. Ryou, S. C. Shen, P. D. Yoder, T. Detchprohm, R. D. Dupuis, Y. Wei, H. Xie, A. Fischer and F. Ponce, Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates, Phys. Status Solidi C 11, 258 (2014). 28. X. Li, P. F. Zhu, G. Y. Liu, J. Zhang, R. B. Song, Y. K. Ee, P. Kumnorkaew, and J. F. Gilchrist, and N. Tansu, Light Extraction Efficiency Enhancement of III-Nitride Light-Emitting Diodes by using 2-D Close-Packed TiO 2 Microsphere Arrays, IEEE J. Display Technol. 9, 5, 324 (2013). 29. Z. Lochner, X. Li, T. T. Kao, M. Satter, H. J. Kim, S. C. Shen, P. D. Yoder, A. Fischer, and F. A. Ponce, J. H. Ryou, and R. D. Dupuis, Stimulated emission at 257 nm from AlGaN/AlN heterostructure on AlN substrate, Phys. Status Solidi A 210, 9, 1768 (2013). 30. T. T. Kao, Y. S. Liu, M. M. Satter, X. Li, Z. Lochner, P. D. Yoder, T. Detchprohm, R. D. Dupuis, S. C. Shen,, J. H. Ryou, A. M. Fischer,Y. Wei, H. Xie, F. A. Ponce, Sub-250 nm low-threshold deep-ultraviolet AlGaNbased heterostructure laser employing HfO 2 /SiO 2 dielectric mirrors, Appl. Phys. Lett. 103, (2013). 31. Z. Lochner, T. T. Kao, Y. S. Liu, X. Li, M. M. Satter, S. C. Shen, P. D. Yoder, J. H. Ryou, R. D. Dupuis, Deep- Ultraviolet Lasing at 243 nm from Photo-Pumped AlGaN/AlN Heterostructure on AlN Substrate, Appl. Phys. Lett. 102, (2013). 32. C. K. Tan, J. Zhang, X. Li, G. Y. Liu, B. O. Tayo, and N. Tansu, First-Principle Electronic Properties of Dilute- As GaNAs Alloy for Visible Light Emitters, IEEE J. Display Technol. 9, 4, 272 (2013). 33. (Cover Article) W. H. Koo, W. Youn, P. F. Zhu, X. Li, N. Tansu, and F. So, Light extraction of organic light emitting diodes using defective hexagonal-close-packed array, Adv. Funct. Mater. 22, 3454 (2012). 34. G. Y. Liu, J. Zhang, X. Li, G. S. Huang, T. Paskova, K. R. Evans, H. P. Zhao, and N. Tansu, Metalorganic Vapor Phase Epitaxy and Characterizations of Nearly-Lattice-Matched AlInN Alloys on GaN / Sapphire Templates and Free-Standing GaN Substrates, J. Cryst. Growth 340, 66 (2011). 35. W. Cao, J. Biser, Y. K. Ee, X. Li, N. Tansu, H. M. Chan, and R. P. Vinci, Dislocation structure of GaN films grown on planar and nano-patterned sapphire, J. Appl. Phys. 110, (2011). 14

15 36. X. Li, R. B. Song, Y. K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes with Colloidal Microlens Arrays with Various Aspect Ratios, IEEE Photon. J. 3, 3, 489 (2011). 37. N. Tansu, H. P. Zhao, G. Y. Liu, X. Li, J. Zhang, H. Tong, and Y. K. Ee, Breakthrough in Photonics 2009: III- N Photonics, IEEE Photon. J. 2, 236 (2010). 38. X. Li, H. Tong, H. Zhao, and N. Tansu, Band Structure Calculation of Dilute-As GaNAs by First Principle, in Proc. of the SPIE Photonics West 2010, Physics and Simulation of Optoelectronics Devices XVIII, San Francisco, CA, United States, Jan Y. K. Ee, X. Li, J. E. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, Abbreviated MOVPE Nucleation Studies of III-Nitride Light-Emitting Diodes on Nano-Patterned Sapphire, J. Crys. Growth 312, 1311 (2010). 40. H. Zhao, G. Liu, X. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, Design and Characteristics of Staggered InGaN Quantum Well Light-Emitting Diodes in Green Spectral Regimes IET Optoelectron. 3, 283 (2009). 41. H. P. Zhao, G. Y. Liu, X. Li, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, Growths of Staggered InGaN Quantum Wells Light-Emitting Diodes Emitting at nm Employing Graded Growth- Temperature Profile, Appl. Phys. Lett. 95, , (2009). Conference Proceedings and Presentations 1. (Invited Talk) X. Li, AlN growth and AlGaN deep UV lasers on sapphire, XIX International Workshop on the Physics of Semiconductor Devices (IWPSD), Delhi, India, December (Invited Talk) X. Li, Latest progress on B-III-N alloy & impact of TMA preflow on AlN MOVPE, International Workshop on UV Materials and Devices (IWUMD-2017), Fukuoka, Japan, November (Invited Talk) X. Li, AlGaN deep UV lasers on sapphire and novel III-N materials, International Forum on Wide Bandgap Semiconductors, Beijing, China, November (Invited Talk) X. Li, AlGaN and B-III-N materials for deep UV lasers, the 8th Asia-Pacific Workshop on Widegap Semiconductors (APWS), Qingdao, China, September (Invited Talk) X. Li, AlGaN deep UV lasers and BAlN alloys, National Wide Bandgap Material Conference, Xining, China, August (Invited Talk) X. Li, Research on AlGaN deep UV lasers and B-III-N alloys, SPIE Optics + Photonics, San Diego, CA, United States, August H. Sun, F. Wu, T. M. Al tahtamouni, N. Alfaraj, T. Detchprohm, R. D. Dupuis, and X. Li, "Study of TMAlinduced carbon impurity on AlN film polarity and growth mode on sapphire," 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July S. Wang, X. Li, A. M. Fischer, T. Detchprohm, R. D. Dupuis, and F. A. Ponce, " Crystal structure of BAlN thin films: effect of boron concentration in the gas flow," 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July N. Alfaraj, S. Mitra, F. Wu, I. A. Ajia, B. Janjua, A. Prabaswara, R. A. Aljefri, H. Sun, T. K. Ng, B. S. Ooi, I. S. Roqan, and X. Li, "Modeling and investigation of photoinduced entropy of InGaN/GaN p-i-n doubleheterostructure nanowires," 12th International Conference on Nitride Semiconductors (ICNS-12), Strasbourg, France, July H. Sun, F. Wu, T. M. Al tahtamouni, N. Alfaraj, T. Detchprohm, R. D. Dupuis, and X. Li, "Structural Properties and Growth Modes of MOCVD-Grown AlN with TMAl Pretreatment of Sapphire Substrate," 59th Electronic Material Conference (EMC), South Bend, IN, United States, June H. Sun, F. Wu, T. M. Al tahtamouni, D. H. Anjum, N. Alfaraj, T. Detchprohm, R. D. Dupuis, and X. Li, "Investigation of Microstructure, Strain and Defect of BAlN/Al(Ga)N Heterostructures," 59th Electronic Material Conference (EMC), South Bend, IN, United States, June N. Alfaraj, S. Mitra, F. Wu, I. A. Ajia, B. Janjua, A. Prabaswara, R. A. Aljefri, H. Sun, T. K. Ng, B. S. Ooi, I. S. Roqan, and X. Li, "Photoinduced thermodynamic behavior in InGaN/GaN double-heterostructure nanowires," 59th Electronic Material Conference (EMC), South Bend, IN, United States, June (Invited Talk) X. Li, AlGaN Deep UV Lasers and B-III-N Alloys, 9th International Conference on Materials for Advanced Technologies (ICMAT 2017), Singapore, June