Lehigh University (Bethlehem, PA, USA)

Transcription

1 Contact Information HONGPING ZHAO, PH.D. (Ms.) Hongping Zhao, Ph.D. Assistant Professor Department of Electrical Engineering and Computer Science (EECS) 712 Glennan Building Euclid Avenue Case Western Reserve University Cleveland, OH 44106, USA Phone: (216) ; Fax : (216) Group website: Birth Place and Date Suzhou, China & Oct., 1980; US Permanent Resident Education Spring 2007 Fall 2010, Lehigh University (Bethlehem, Pennsylvania, USA) Doctor of Philosophy (Ph.D.) in Electrical Engineering Ph.D. Advisor: Prof. Nelson Tansu Ph.D. Dissertation Title: Enhancement of Internal Quantum Efficiency and Optical Gain for Nitride Light- Emitting Diodes and Laser Diodes Fall 2003 Fall 2006, Southeast University (Nanjing, China) Master of Sciences (M.S.) in Electrical Engineering M.S. Advisor: Prof. Wei Lei and Prof. Xiaohua Li Master Thesis Title: Study on Cathode Emission and Structure Design of High-Frequency Devices Fall 1999 Summer 2003, Bachelor of Science (B.S.) in Physics Ranked top 3 among ~250 students. Professional Experiences Nanjing Normal University (Nanjing, China) Jul present, Case Western Reserve University (Cleveland, OH, USA) Assistant Professor (Tenure-Track) Department of Electrical Engineering and Computer Sciences Case School of Engineering Oct Jun. 2011, Lehigh University (Bethlehem, PA, USA) Postdoctoral Research Associate Center for Optical Technologies Department of Electrical and Computer Engineering P. C. Rossin College of Engineering and Applied Science Jan Oct. 2010, Lehigh University (Bethlehem, PA, USA) Ph.D. Candidate and Research Assistant Center for Optical Technologies Department of Electrical and Computer Engineering P. C. Rossin College of Engineering and Applied Science Page 1 of 17

2 Sep Dec Southeast University (Nanjing, China) Master Graduate Student and Research Assistant JinDongFei Display Technology Center School of Electronic Science and Engineering Awards & Honors Received Midwest Energy News 40 Under 40 award, September 2016 Rossin Doctoral Fellowship Award, , Rossin College of Engineering and Applied Science, Lehigh University SPIE Educational Scholarship in Optical Science and Engineering (2009), SPIE Sherman-Fairchild Fellowship for solid state studies ( ), Lehigh University SPIE Educational Scholarship in Optical Science and Engineering (2008), International Society for Optical Engineering (SPIE) Sigma Xi Research Society (Inducted in 2008), Lehigh University Phi Beta Delta Honors (Inducted in 2007), Lehigh University SEU Outstanding Scholarship (2004), Southeast University Best Student Award (2000, 2001, 2002, 2003), Nanjing Normal University Leadership Award (2002, 2003), Nanjing Normal University Feng Ruer Scholarship (2002), Nanjing Normal University Professional Affiliations 2007 present, Member, Institute of Electrical and Electronics Engineers (IEEE) 2007 present, Member, Optical Society of America (OSA) 2007 present, Member, International Society for Optical Engineering (SPIE) 2007 present, Member, IEEE Photonics Society (IPS) Research and Teaching Interests Research Interests - Wide Bandgap and Ultra-Wide Bandgap Semiconductor Materials and Devices My research thrust falls under the umbrella of the synthesis and physics of wide bandgap (WBG) and ultrawide bandgap (UWBG) semiconductor materials and devices, and the low-dimensional semiconductor nanomaterials and devices. Specifically, my research focuses on the metalorganic chemical vapor deposition (MOCVD) of III-nitrides, II-IV-nitrides and III-N/II-IV-N2 heterostructures; low pressure chemical vapor deposition (LPCVD) of UWBG Gallium Oxide (Ga2O3) thin films; and LPCVD of nitride and oxide based semiconductor nanomaterials and structures. The device applications include semiconductor light emitting diodes for solid state lighting, WBG/UWBG semiconductors for high power electronics and short wavelength optoelectronics, solar cells for renewable energy generation, semiconductor nanomaterials and structures for chemical and biomedical sensing, and microelectromechanical/nanoelectromechanical systems (MEMS/NEMS). These interdisciplinary research areas are built upon multiple disciplines including Electrical Engineering, Applied Physics, Material Sciences, and Chemical/Biomedical Engineering. Fundamental knowledge from quantum mechanics, quantum electronics/optics, solid state physics, semiconductor physics, and electromagnetics will be used to solve problems related to semiconductors, optoelectronics, electronics and energy. Teaching Interests My teaching interests encompass courses in the areas of engineering electromagnetics (undergraduate (UG)), photonic and optoelectronic devices (graduate (G)), applied quantum mechanics (G), physics of semiconductor devices (UG/G) and physics of nanomaterials and devices (UG/G). My mentorship crosses the spectrum of graduate students (MS and PhD students), undergraduate students, K-12 students and international visiting scholars. The goal is to advance STEM education to better prepare the next generation workforce. Page 2 of 17

3 Refereed Journal (53) and Conference (89) Publications Refereed Journal Articles ISI Web of Knowledge: Authors: Zhao hp ; Address: (Case and Elect) or (Lehigh and Elect) or (Southeast and Elect) Sum of the Times Cited (as of Apr. 2017): 2455 (h-index = 25) Research ID Search (Researcher ID: H ): Google Scholar ID: Total Citations of Journals (as of Apr. 2017): >3100 (h-index = 26; i10-index=36) {students names underlined} [J55] X.-Q. Zheng, J. Lee, S. Rafique, L. Han, C. A. Zorman, H. Zhao, P. X.-L. Feng, Wide Bandgap β-ga2o3 Nanomechanical Resonators with Spatially Visualized Multimode Motions, Adv. Mater., (submitted). [J54] S. Rafique, L. Han, H. Zhao, Thermal Annealing Effect on β-ga2o3 Thin Film Solar Blind Photodetector Heteroepitaxially Grown on Sapphire Substrate, Physica Status Solidi A, (accepted). [J53] L. Han, C. Lieberman, H. Zhao, Electron-Photon and Electron-LO Phonon Scattering Rates in Closely-Lattice- Matched GaN-ZnGeN2 Coupled Quantum Wells, J. Appl. Phys., 121(9), (2017). [J52] S. Rafique, L. Han, J. Lee, X. Zheng, C. A. Zorman, P. X.-L. Feng, H. Zhao, Synthesis of Ga2O3 Nanosheet on 3C-SiC-on-Si by Low Pressure Chemical Vapor Deposition, J. Vac. Sci. Technol. B, 35, (2017). [J51] S. Rafique, L. Han, A. T. Neal, S. Mou, M. J. Tadjer, R. H. French, H. Zhao, Heteroepitaxial Growth of N-type β- Ga2O3 Thin Films on Sapphire Substrate by Low Pressure Chemical Vapor Deposition, Appl. Phys. Letts., 109, , [J50] L. Han, K. Kash, H. Zhao, Designs of Blue and Green Light-Emitting Diodes based on Type-II InGaN-ZnGeN2 Quantum Wells, J. Appl. Phys., 120, , [J49] L. Han, H. Zhao, Interfacial Structure Designs with Impedance-Matching for Ideal Broadband Antireflections, J. Appl. Phys., 119, , [J48] S. Rafique*, L. Han*, M. J. Tadjer, J. A. Freitas Jr., N. Mahadik, H. Zhao, Homoepitaxial Growth of β-ga2o3 Thin Films by Low Pressure Chemical Vapor Deposition, Appl. Phys. Letts., 108, , (* Equally contributed first-authorship) [J47] S. Rafique*, L. Han*, H. Zhao, Growth and Electrical Properties of Free-Standing Zinc Oxide Nanomembranes, ACS Cryst. Growth Des., 16(3), pp , (* Equally contributed first-authorship) [J46] S. Rafique*, L. Han*, C. A. Zorman, H. Zhao, Synthesis of wide bandgap β-ga2o3 rods on 3C-SiC-on-Si, ACS Cryst. Growth Des., 16 (1), pp , (* Equally contributed first-authorship) [J45] S. Rafique, L. Han, H. Zhao, Synthesis of wide bandgap Ga2O3 (Eg~ ev) thin films on sapphire by low pressure chemical vapor deposition, Phys. Status Solidi A, 213(4), pp , [J44] P. C. Quayle, E. W. Blanton, A. Punya, G. T. Junno, K. He, L. Han, H. Zhao, J. Shan, W. R. Lambrecht, K. Kash, Charge-neutral disorder and polytypes in heterovalent wurtzite-based ternary semiconductors: The importance of the octet rule, Phys. Rev. B, 91, , May [J43] S. Rafique, L. Han, H. Zhao, Density Controlled Growth of ZnO Nanowall-Nanowire 3D Networks, ACS Journal of Physical Chemistry C, 119 (21), pp , May [J42] L. Han, R. H. French, and H. Zhao, Surface Antireflection and Light Extraction Properties of GaN Microdomes, IEEE Photonics Journal, Vol. 7, Issue 2, , Apr [J41] S. Rafique, L. Han, and H. Zhao, Chemical Vapor Deposition of m-plane and c-plane InN Nanowires on Si (100) Substrate, J. Crys. Growth, Vol. 415, pp , Jan [J40] L. Han, and H. Zhao, Surface Antireflection Properties of GaN Nanostructures with Various Effective Refractive Index Profiles, Optics Express, Vol. 22, Issue 26, pp , Dec [J39] L. Han, and H. Zhao, Simulation Analysis of GaN microdomes with broadband omnidirectional antireflection for concentrator photovoltaics, J. Appl. Phys., Vol. 115, Issue 13, , Apr [J38] L. Han, T. A. Piedimonte, and H. Zhao, Experimental exploration of the fabrication of GaN microdome arrays based on a self-assembled approach, Optical Materials Express, Vol. 3, Issue 8, , July [J37] H. Zhao, X. Jiao, N. Tansu, Analysis of Interdiffused InGaN Quantum Wells for Visible Light-Emitting Diodes, J. Disp. Technol. vol. 9, no. 4, pp , April Page 3 of 17

4 [J36] H. Zhao, G. Liu, J. Zhang, R. A. Arif, N. Tansu, Analysis of Internal Quantum Efficiency and Current Injection Efficiency in Nitride Light-Emitting Diodes, J. Disp. Technol. vol. 9, no. 4, pp , April [J35] G. Sun, R. Chen, Y. J. Ding, H. Zhao, G. Liu, J. Zhang, and N. Tansu, Strikingly Different Behaviors of Photoluminescence and Terahertz Generation in InGaN/GaN Quantum Wells, IEEE J. Selected Topics in Quantum Electronics, Vol. 19, No. 1, , January-February [J34] G. Xu, G. Sun, Y. J. Ding, H. Zhao, G. Y. Liu, J. Zhang, and N. Tansu, Investigation of Large Stark Shifts in InGaN / GaN Multiple Quantum Wells, J. Appl. Phys., vol. 113, Art , January [J33] P. Zhao, L. Han, M. R. McGoogan, and H. Zhao, Analysis of TM Mode Light Extraction Efficiency Enhancement for Deep Ultraviolet AlGaN Quantum Wells Light-Emitting Diodes with III-nitride Micro-domes, Optical Materials Express, Vol. 2, Issue 10, , October [J32] P. Zhao, and H. Zhao, Analysis of Light Extraction Efficiency Enhancement for Thin-Film-Flip-Chip InGaN Quantum Wells Light-Emitting Diodes with GaN Micro-Domes, Optics Express, Vol. 20, No. S5, A765-A776, September [J31] G. Liu, J. Zhang, X.-H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. Zhao, and N. Tansu, Metalorganic Vapor Phase Epitaxy and Characterizations of Lattice-Matched AlInN Alloys on GaN / Sapphire Templates and Free- Standing GaN Substrates, J. Crys. Growth, Vol. 340 (1), pp , February [J30] (Invited Journal Paper) H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, Approaches for High Internal Quantum Efficiency Green InGaN Light-Emitting Diodes with Large Overlap Quantum Wells, Optics Express, 19(S4), A991-A1007, June [J29] G. Sun, G. Xu, Y. J. Ding, H. Zhao, G. Liu, J. Zhang, and N. Tansu, Investigation of Fast and Slow Decays in InGaN/GaN Quantum Wells, Appl. Phys. Lett., vol. 99, Art , Aug [J28] J. Zhang, H. Zhao, and N. Tansu, Large Optical Gain AlGaN-Delta-GaN Quantum Wells Laser Active Regions in Mid- and Deep-Ultraviolet Spectral Regimes, Appl. Phys. Lett., vol. 98, Art , Apr [J27] H. Zhao, J. Zhang, G. Liu, and N. Tansu, Surface Plasmon Dispersion Engineering via Double-Metallic Au / Ag Layers for Nitride Active Regions, Appl. Phys. Lett., vol. 98, Art , Apr [J26] G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, and N. Tansu, Selective Area Epitaxy of Ultra-High Density InGaN Quantum Dots by Diblock Copolymer Lithography, Nanoscale Res. Lett., vol. 6, Art. 342, Apr [J25] G. Sun, G. Xu, Y. J. Ding, H. Zhao, G. Liu, J. Zhang and N. Tansu, Efficient Terahertz Generation from Multiple InGaN/GaN Quantum Wells, IEEE J. Selected Topics in Quantum Electronics., vol. 17(1), pp , January- February [J24] H. Zhao, G. Liu, R. A. Arif, and N. Tansu, Current Injection Efficiency Induced Efficiency-Droop in InGaN Quantum Well Light-Emitting Diodes, Solid-State Electronics, vol. 54 (10), pp , Oct [J23] H. Zhao, G. Y. Liu, and N. Tansu, Analysis of InGaN Quantum Wells with Delta-InN Layer for Light-Emitting Diodes, Appl. Phys. Lett., 97 (13), Art , Sep [J22] J. Zhang, H. Zhao, and N. Tansu, Effect of Crystal-Field Split-Off Hole and Heavy-Hole Bands Crossover on Gain Characteristics of High Al-Content AlGaN Quantum Well Lasers, Appl. Phys. Lett. vol. 97, Art , Sep [J21] G. Sun, Y. J. Ding, G. Y. Liu, G. S. Huang, H. Zhao, N. Tansu, and J. B. Khurgin, Photoluminescence Emission in Deep Ultraviolet Region from GaN/AlN Asymmetric-Coupled Quantum Wells, Appl. Phys. Lett., vol. 97(2), Art. No , Jul [J20] H. Zhao, and N. Tansu, Optical Gain Characteristics of Staggered InGaN Quantum Wells Lasers, J. Appl. Phys., vol.107(11), Art , Jun [J19] (Invited Review Article) N. Tansu, H. Zhao, G. Liu, X. H. Li, J. Zhang, H. Tong, and Y. K. Ee, Breakthrough in Photonics 2009: III-Nitride Photonics, IEEE Photonics Journal, Vol.2, No.2, pp , Apr [J18] G. Xu, Y. J. Ding, H. Zhao, M. Jamil, G. Liu, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, F. K. Hopkins, C. S. Gallinat, G. Koblmüller, and J. S. Speck, THz Generation from InN Films due to Destructive Interference between Optical Rectification and Photocurrent Surge, Semiconductor Science and Technology, vol. 25 (1), Art , Jan [J17] (Invited Journal Paper) H. Zhao, G. Liu, X. H. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, Design and Characteristics of Staggered InGaN Quantum Wells Light-Emitting Diodes in Green Spectra Regime, IET Optoelectron., vol. 3(6), pp , Dec [J16] H. Zhao, G. Liu, X. H. Li, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, Growths of Staggered InGaN Quantum Wells Light-Emitting Diodes Emitting at nm Employing Graded-Temperature Profile, Appl. Phys. Lett., vol. 95(6), Art , Aug Page 4 of 17

5 [J15] Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, Optimization of Light Extraction Efficiency of III-Nitride Light Emitting Diodes with Self-Assembled Colloidal-based Microlenses, IEEE J. Selected Topics in Quantum Electronics, vol. 15 (4), pp , July-August [J14] H. Zhao, R. A. Arif, and N. Tansu, Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at nm, IEEE J. Selected Topics in Quantum Electronics, vol. 15 (4), pp , July-August [J13] H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, Self-Consistent Analysis of Strain-Compensated InGaN-AlGaN Quantum Wells for Lasers and Light Emitting Diodes, IEEE J. Quantum Electron., vol. 45(1), pp , Jan [J12] M. Jamil, H. Zhao, J. Higgins, and N. Tansu, MOVPE and Photoluminescence of Narrow Band Gap (0.77 ev) InN on GaN / Sapphire by Pulsed Growth Mode, in Physica Stat. Solidi (a), vol. 205(12), pp , Dec [J11] M. Jamil, H. Zhao, J. Higgins and N. Tansu, Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 ev) InN grown on GaN/sapphire using pulsed MOVPE, J. Crys. Growth, vol. 310(23), pp , Nov [J10] H. Zhao, R. A. Arif, and N. Tansu, Self Consistent Gain Analysis of Type-II W InGaN-GaNAs Quantum Well Lasers, J. Appl. Phys., 104 (4), Art , Aug [J9] R. A. Arif, H. Zhao, Y. K. Ee, and N. Tansu, Spontaneous Emission and Characteristics of Staggered InGaN Quantum Wells Light Emitting Diodes, IEEE J. Quantum Electron., vol. 44(5-6), pp , May-June [J8] Y. K. Ee, H. Zhao, R. A. Arif, M. Jamil, and N. Tansu, Self-Assembled InGaN Quantum Dots on GaN Emitting at 520 nm Grown by Metalorganic Vapor-Phase Epitaxy, J. Crys. Growth, vol. 310(7-9), pp , Apr [J7] H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, Optical Gain Analysis of Strain-Compensated InGaN AlGaN Quantum Well Active Regions for Lasers Emitting at nm, Optical and Quantum Electronics, vol. 40 (5-6), , Apr [J6] R. A. Arif, H. Zhao, and N. Tansu, Type-II InGaN-GaNAs Quantum Wells Active Regions for Lasers Applications, Appl. Phys. Lett. vol. 92(1), Art. No , Jan [J5] Q. Wang, H. Mu, X. Zhang, W. Lei, J. Wang, and H. Zhao, Field Emitters with Low Turn On Electric Field Based on Carbon Fibers, Applied Surface Science, 253(14), , May [J4] W. Lei, X. Zhang, X. Zhou, Z. Zhu, C. Lou, and H. Zhao, Characteristics of a cold cathode electron source combined with secondary electron emission in a FED, Applied Surface Science, 251, , Sep [J3] H. Zhao, W. Lei, X. Zhang, X. Li, and Q. Wang. Simulation of the cathode surface damages in a HOPFED during ion bombardment, Journal of Vacuum Science & Technology B, 23(6), , Nov [J2] M. Liu, X. Zhang, W. Lei, H. Zhao, and B. Wang, Transverse energy distribution analysis in a field emission element with an insulator funnel, Nuclear Instruments and Methods in Physics Research Section B, 234(3), , Jun [J1] X. Zhong, H. Zhao, W. Lei, X. Zhang, H. Yin, W. van der Poel, D. den Engelsen, Numerical study of the electron and ion trajectories in HOPFEDs, Journal of the Society for Information Display, 12(4), , Dec Refereed Conference Proceedings [C88] (Invited Conference Paper) H. Zhao, S. Rafique, L. Han, Growth and Characterization of Ultrawide Bandgap β- Ga2O3 Thin Films, 232 th ECS Meeting-GaN and SiC Power Technologies 7, National Harbor, Maryland, October [C87] X. Zheng, J. Lee, S. Rafique, L. Han, C. A. Zorman, H. Zhao, P. X.-L. Feng, Very Thin Suspended β-ga2o3 Nano Diaphragms for Mechanical Resonator and Ultraviolet Sensing Applications, the 59 th Electronic Materials Conference (EMC 2017), South Bend, IN, June [C86] S. Rafique, L. Han, J. R. Grgat, H. Zhao, N-type β-ga2o3 Thin Films Grown via Low Pressure Chemical Vapor Deposition, the 59 th Electronic Materials Conference (EMC 2017), South Bend, IN, June [C85] J. R. Grgat, L. Han, H. Zhao, Analysis of Position and Thickness Dependence of ZnGeN2 Layer in Type-II InGaN- ZnGeN2 Quantum Wells Light-Emitting Diodes, the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2017, San Francisco, CA, May [C84] S. Rafique, L. Han, H. Zhao, Ultra-wide Bandgap beta-ga2o3 for Deep-UV Solar Blind Photodetectors, SPIE Photonics West 2017, Oxide-based Materials and Devices VIII, San Francisco, CA, Feb [C83] H. Zhao, L. Han, Novel Device Designs Enabled by Lattice-Matched GaN-ZnGeN2 Heterostructures, SPIE Photonics West 2017, Gallium Nitride Materials and Devices XII, San Francisco, CA, Feb Page 5 of 17

6 [C82] X. Zheng, J. Lee, S. Rafique, L. Han, C. A. Zorman, H. Zhao, P. X.-L. Feng, Wide Bandgap β-ga2o3 Nanomechanical Resonators for Detection of Middle-Ultraviolet (MUV) Photon Radiation, IEEE MEMS 2017 Conference, Las Vegas, January, [C81] X. Zheng*, S. Rafique*, J. Lee, L. Han, C. A. Zorman, H. Zhao, P. X.-L. Feng, Wide Bandgap β-ga2o3 Nanomechanical Resonators, the AVS 63 rd International Symposium and Exhibition, Nashville, TN, November, (* Equally contributed first-authorship) [C80] L. Han, C. Lieberman, H. Zhao, Electron-photon and electron-lo phonon intersubband scattering rates in latticematched GaN-ZnGeN2 coupled quantum wells, the International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, October, [C79] (Late News) S. Rafique, L. Han, M. J. Tadjer, H. Zhao, Synthesis of β-ga2o3 Thin Films by Low Pressure Chemical Vapor Deposition, the 58 th Electronic Materials Conference (EMC 2016), Newark, DE, June [C78] (Late News) S. Rafique, L. Han, J. Zhou, H. Zhao, Synthesis and Control of 3D Nano-Networks: 1D ZnO Nanowires Embedded in 2D Nanowalls, the 57 th Electronic Materials Conference (EMC 2015), Columbus, OH, June [C77] L. Han, and H. Zhao, Surface Antireflection Studies of GaN Nanostructures with Various Effective Refractive Index Profiles, the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2014, San Francisco, CA, June [C76] L. Han, K. Kash, H. Zhao, High Efficiency Light-Emitting Diodes based on InGaN-ZnGeN2 Type-II Quantum Wells, SPIE Photonics West 2014, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, San Francisco, CA, Feb [C75] (Tutorial Conference Paper) N. Tansu, J. Zhang, G. Y. Liu, H. Zhao, C. K. Tan, and P. F. Zhu, Internal and External Efficiency in InGaN-Based Light-Emitting Diodes, the Asian Communications and Photonics (ACP) Conference 2013, Beijing, China, November [C74] (Invited Conference Paper) H. Zhao, L. Han, T. A. Piedimonte, III-nitride Micro-domes for High Efficiency Light- Emitting Diodes and Concentrator Photovoltaics, the Asia Communications and Photonics Conference (ACP) 2013, Beijing, China, November [C73] (Invited Conference Paper) H. Zhao, L. Han, T. A. Piedimonte, Micro-domes for High Efficiency Light-Emitting Diodes, the 13 th International Meeting on Information Display (imid-2013), Daegu, South Korea, August [C72] G. Sun, R. Chen, Y. J. Ding, H. Zhao, G. Liu, J. Zhang, and N. Tansu, Complementing Trends of Photoluminescence and Terahertz Intensities in Staggered InGaN Quantum Wells, the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2013, San Francisco, CA, June [C71] L. Han, T. A. Piedimonte, M. R. McGoogan, I. V. Kidd, R. H. French, and H. Zhao, Simulations and Experiments of Tunable GaN Microdomes for Broadband Omnidirectional Antireflection, the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2013, San Francisco, CA, June [C70] L. Han, M. R. McGoogan, T. A. Piedimonte, I. V. Kidd, R. H. French, H. Zhao, GaN Micro-Domes for Broadband Omnidirectional Antireflection for Concentrated Photovoltaics, the SPIE Photonics West 2013, Optoelectronic Materials and Devices, San Francisco, CA, Feb [C69] P. Zhao, L. Han, and H. Zhao, Light Extraction Efficiency Enhancement for InGaN Quantum Wells Light-Emitting Diodes with GaN Micro-Domes, the SPIE Photonics West 2013, Semiconductor Lasers and LEDs, San Francisco, CA, Feb [C68] (Invited Conference Paper) N. Tansu, J. Zhang, G. Liu, H. Zhao, C. K. Tan, and P. F. Zhu, Physics of High- Efficiency III-Nitride Quantum Wells Light-Emitting Diodes, the Asian Communications and Photonics (ACP) Conference 2012, Guangzhou, China, Nov [C67] H. Zhao, X. Jiao, N. Tansu, Analysis of Position and Thickness Dependences of Delta Layer in InGaN-Delta-InN Quantum Wells Light-Emitting Diodes, the Asian Communications and Photonics (ACP) 2012, Guangzhou, China, Nov [C66] (Conference Keynote Talk) N. Tansu, J. Zhang, G. Liu, C. K. Tan, P. Zhu, H. Zhao, Physics and Technology of III-Nitride Semiconductors for Energy Efficiency Applications, ICYRAM 2012, Singapore, July [C65] X. Jiao, P. Zhao, and H. Zhao, Analysis of Thermally-Annealed InGaN Quantum Wells for Light-Emitting Diodes, IEEE EnergyTech 2012, Cleveland, OH, May [C64] P. Zhao, X. Jiao, and H. Zhao, Analysis of Light Extraction Efficiency Enhancement for InGaN Quantum Wells Light-Emitting Diodes with Microspheres, IEEE EnergyTech 2012, Cleveland, OH, May Page 6 of 17

7 [C63] G. Sun, R. Chen, Y. J. Ding, H. Zhao, G. Liu, J. Zhang, and N. Tansu, Strikingly Different Behaviors of Photoluminescence Intensity and Terahertz Output Power versus Period of InGaN/GaN Quantum Wells, IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2012, San Jose, CA, May [C62] P. Zhao, D. Sun, and H. Zhao, Enhancement of Light Extraction Efficiency for Deep Ultraviolet AlGaN Quantum Wells Light-emitting Diodes with III-nitride Microspheres, IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2012, San Jose, CA, May [C61] (Invited Conference Talk) N. Tansu, J. Zhang, G. Y. Liu, C. K. Tan, P. F. Zhu, and H. Zhao, Advances in III- Nitride Semiconductors for Energy Efficiency Applications, the KAUST-UCSB-NSF Solid State Lighting Workshop 2012, Thuwal, Saudi Arabia, February [C60] G. Liu, J. D. Poplawsky, J. Zhang, V. Dierolf, H. Zhao, and N. Tansu, Quantum Efficiency Characterizations of Staggered InGaN Quantum Wells Light-Emitting Diodes by Temperature-Dependent Electroluminescence Measurement, SPIE Photonics West 2012, LEDs: Materials, Devices, and Applications for Solid State Lighting XVI, San Francisco, CA, Jan [C59] J. Zhang, H. Zhao, and N. Tansu, Engineering of AlGaN-Delta-GaN Quantum Wells Gain Media for Mid- and Deep-Ultraviolet Lasers, SPIE Photonics West 2012, Novel In-Plane Semiconductor Lasers XI, San Francisco, CA, Jan [C58] G. Liu, J. Zhang, H. Zhao, and N. Tansu, Device Characteristics of InGaN Quantum Well Light-Emitting Diodes with AlInN Thin Barrier Insertion, SPIE Photonics West 2012, Gallium Nitride Materials and Devices VII, San Francisco, CA, Jan [C57] P. Zhao, and H. Zhao, Enhancement of Field Emission of Carbon Nanotubes Arrays Formed by Self-Assembled Microspheres, the IEEE International Semiconductor Device Research Symposium (ISDRS) 2011, College Park, MD, December [C56] (Invited Conference Paper) N. Tansu, J. Zhang and H. Zhao, Physics of III-Nitride Gain Media for Visible and Deep UV Lasers, the 24 th Annual Meeting of the IEEE Photonics Society, Arlington, VA, October [C55] G. Xu, G. Sun, Y. J. Ding, H. Zhao, G. Liu, J. Zhang, N. Tansu, Investigation of Blueshift of Photoluminescence Emission Peak in InGaN/GaN Multiple Quantum Wells, IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2011, Paper JWA70, Baltimore, MD, May [C54] G. Sun, G. Xu, Y. J. Ding, H. Zhao, G. Liu, J. Zhang, N. Tansu, High-Power Terahertz Generation due to Dipole Radiation within InGaN/GaN Multiple Quantum Wells, IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2011, Paper CMM4, Baltimore, MD, May [C53] J. Zhang, H. Zhao, and N. Tansu, High TE-Polarized Optical Gain from AlGaN-Delta-GaN Quantum Well for Deep UV Lasers, IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2011, Paper JTuD4, Baltimore, MD, May [C52] G. Liu, H. Zhao, J. Zhang, and N. Tansu, Growths of InGaN-Based Light-Emitting Diodes with AlInN Thin Barrier for Efficiency Droop Suppression, IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2011, Paper CMDD6, Baltimore, MD, May [C51] H. Zhao, J. Zhang, G. Liu, and N. Tansu, Surface Plasmon Dispersion Engineering via Double-Metallic Au / Ag Layers for Nitride Light-Emitting Diodes, IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2011, Paper CWF5, Baltimore, MD, May [C50] H. Zhao, J. Zhang, T. Toma, G. Liu, J. D. Poplawsky, V. Dierolf, and N. Tansu, MOCVD Growths of Linearly- Shaped Staggered InGaN Quantum Wells Light-Emitting Diodes, the American Physical Society (APS) Annual March Meeting 2011, Dallas, Texas, March [C49] G. Liu, H. Zhao, J. Zhang, J. H. Park, L. J. Mawst, and N. Tansu, Selective Area Epitaxy of Ultra-High Density InGaN Based Quantum Dots, IEEE / Photonics Society Winter Topicals 2011, Keystone, CO, January [C48] J. Zhang, H. Zhao, and N. Tansu, Gain Characteristics of Deep UV AlGaN Quantum Wells Lasers, SPIE Photonics West 2011, Novel In-Plane Semiconductor Lasers X, San Francisco, CA, January [C47] H. Zhao, J. Zhang, G. Liu, T. Toma, J. D. Poplawsky, V. Dierolf and N. Tansu, Cathodoluminescence Characteristics of Linearly-Shaped Staggered InGaN Quantum Wells Light-Emitting Diodes, SPIE Photonics West 2011, Gallium Nitride Materials and Devices VI, San Francisco, CA, January [C46] (Invited Conference Paper) N. Tansu, H. Zhao, J. Zhang, G. Liu, X. H. Li, Y. K. Ee, R. Song, T. Toma, L. Zhao, and G. S. Huang, Novel Approaches for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes Device Physics and Epitaxy Engineering, SPIE Photonics West 2011, LEDs: Materials, Devices, and Applications for Solid State Lighting XV, Paper , San Francisco, CA, January Page 7 of 17

8 [C45] G. Liu, H. Zhao, J. Zhang, H. Tong, G. S. Huang, and N. Tansu, Growths of Lattice-Matched AlInN / GaN for Optoelectronics Applications, the 23 rd Annual Meeting of the IEEE Photonics Society, Paper WY5, Denver, CO, November [C44] J. Zhang, H. Zhao, and N. Tansu, Gain and Spontaneous Emission Characteristics of High Al-Content AlGaN Quantum Well Lasers, the 23 rd Annual Meeting of the IEEE Photonics Society, Paper MI4, Denver, CO, November [C43] H. Zhao, J. Zhang, T. Toma, G. Y. Liu, J. D. Poplawsky, V. Dierolf, and N. Tansu, Cathodoluminescence Characteristics of Linearly-Shaped Staggered InGaN Quantum Wells Light-Emitting Diodes, the 23 rd Annual Meeting of the IEEE Photonics Society, Paper WY4, Denver, CO, November [C42] (Invited Conference Paper) N. Tansu, H. Zhao, J. Zhang, G. Y. Liu, X. H. Li, H. Tong, T. Toma, G. S. Huang, and Y. K. Ee, " Device Physics and Epitaxy Engineering for High-Efficiency III-Nitride Light-Emitting Diodes", the International Union of Materials Research Societies - International Conference on Electronic Materials (IUMRS- ICEM) 2010, Seoul, Korea, August [C41] G. Sun, S. K. Tripathy, Y. Ding, G. Liu, H. Zhao, G. S. Huang, N. Tansu, and J. B. Khurgin, Photoluminescence Quenching due to Relocation of Electrons in GaN/AlN Asymmetric-Coupled Quantum Wells, OSA/APS Quantum Electronics and Laser Sciences (QELS) 2010, San Jose, CA, May [C40] G. Sun, S. K. Tripathy, Y. Ding, G. Liu, G. S. Huang, H. Zhao, N. Tansu, and J. B. Khurgin, Photoluminescence Emission in Deep Ultraviolet Region from GaN/AlN Asymmetric-Coupled Quantum Wells, the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2010, San Jose, CA, May [C39] G. Liu, H. Zhao, J. H. Park, L. J. Mawst, and N. Tansu, Growths of Ultra High Density InGaN-Based Quantum Dots on Self-Assembled Diblock Copolymer Nanopatterns, the IEEE/OSA Conference on Lasers and Electro- Optics (CLEO) 2010, San Jose, CA, May [C38] (Invited Conference Paper) H. Zhao, J. Zhang, G. Y. Liu, X. H. Li, Y. K. Ee, H. Tong, T. Toma, G. S. Huang, and N. Tansu, Approaches for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes - Device Physics and Epitaxy Engineering, the American Vacuum Society (AVS) Meeting 2010, Ann-Arbor, MI, May [C37] (Invited Conference Paper) H. Zhao, G. Liu, X. H. Li, Y. K. Ee, H. Tong, J. Zhang, G. S. Huang, and N. Tansu, Novel Growth and Device Concepts for High-Efficiency InGaN Quantum Wells Light-Emitting Diodes, the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2010, San Jose, CA, May [C36] G. Liu, H. Zhao, J. Zhang, G. S. Huang, and N. Tansu, Growths of Lattice-Matched AlInN Alloys on GaN, the American Physical Society (APS) Annual March Meeting 2010, Portland, Oregon, March [C35] H. Tong, J. Zhang, H. Zhao, G. Liu, V. A. Handara, J. A. Herbsommer and N. Tansu, Thermal Conductivity Measurement of Pulsed-MOVPE InN Alloy Grown on GaN / Sapphire by 3 ω Method, SPIE Photonics West 2010, Gallium Nitride Materials and Devices V, San Francisco, CA, January [C34] G. Liu, H. Zhao, and N. Tansu, Electron-Photon and Electron-LO Phonon Intersubband Scattering Rates in GaN / AlN Quantum Wells, SPIE Photonics West 2010, Physics and Simulation of Optoelectronics Devices XVIII, San Francisco, CA, January [C33] X. H. Li, H. Tong, H. Zhao, and N. Tansu, Band Structure Calculation of Dilute-As GaNAs by First Principle, SPIE Photonics West 2010, Physics and Simulation of Optoelectronics Devices XVIII, San Francisco, CA, January [C32] H. Zhao, G. Liu, and N. Tansu, Surface Plasmon Dispersion Engineering Utilizing Double-Metallic Ag / Au Layers for InGaN Quantum Wells Light Emitting Diodes, SPIE Photonics West 2010, LEDs: Materials, Devices, and Applications for Solid State Lighting XIV, San Francisco, CA, January [C31] (Invited Conference Paper) H. Zhao, G. Liu, R. A. Arif, Y. K. Ee, X. H. Li, J. Zhang, H. Tong, G. S. Huang, and N. Tansu, Novel Approaches for Efficiency Enhancement in InGaN-Based Light-Emitting Diodes, the 2 nd International Conference on White LEDs and Solid State Lighting 2009, Taipei, Taiwan, December [C30] H. Zhao, G. Liu, R. A. Arif, N. Tansu, Effect of Current Injection Efficiency on Efficiency-Droop in InGaN Quantum Well Light-Emitting Diodes, the IEEE International Semiconductor Device Research Symposium (ISDRS) 2009, College Park, MD, November [C29] H. Zhao, G. S. Huang, G. Liu, X. Li, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, Characteristics of Staggered InGaN Quantum Wells Light-Emitting Diodes Emitting at nm, the 67 th IEEE Device Research Conference (DRC) 2009, University Park, PA, June [C28] G. Sun, S. K. Tripathy, Y. J. Ding, G. Liu, G. S. Huang, H. Zhao, N. Tansu, and J. B. Khurgin, Stark Effect Induced by Photogenerated Carriers in Multiple GaN/AlN Asymmetric Coupled Quantum Wells, the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2009, Baltimore, MD, May Page 8 of 17

9 [C27] G. Xu, Y. J. Ding, H. Zhao, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, F. K. Hopkins, C. S. Gallinat, G. Koblmüller, and J. S. Speck, THz Generation from InN Films Based on Interference between Optical Rectification and Photocurrent Surge, the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2009, Baltimore, MD, May [C26] H. Zhao, G. Liu, X. Li, G. S. Huang, S. Tafon Penn, V. Dierolf, and N. Tansu, Staggered InGaN Quantum Wells Light-Emitting Diodes at 520-nm Employing Graded Temperature Growths, the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2009, Baltimore, MD, May [C25] H. Zhao, M. Jamil, G. Liu, G. S. Huang, H. Tong, G. Xu, Y. J. Ding, N. Tansu, Pulsed Metalorganic Vapor Phase Epitaxy of In-Polar and N-Polar InN Semiconductors on GaN / Sapphire Templates for Terahertz Emitters, the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2009, Baltimore, MD, May 2009 [C24] H. Tong, H. Zhao, V. A. Handara, J. A. Herbsommer, and N. Tansu, Analysis of Thermoelectric Characteristics of AlGaN and InGaN Semiconductors, SPIE Photonics West 2009, Physics and Simulation of Optoelectronics Devices XVII, San Jose, CA, January [C23] H. Zhao, R. A. Arif, and N. Tansu, Analysis of Current Injection Efficiency and Efficiency Droop of InGaN Quantum-Wells Light-Emitting Diodes, SPIE Photonics West 2009, Physics and Simulation of Optoelectronics Devices XVII, San Jose, CA, January [C22] H. Zhao, R. A. Arif, and N. Tansu, Staggered InGaN Quantum Well Diode Lasers Emitting at 500 nm, SPIE Photonics West 2009, Novel In-Plane Semiconductor Lasers VIII, San Jose, CA, January [C21] H. Zhao, G. Liu, X. Li, R. A. Arif, G. S. Huang, Y. K. Ee, and N. Tansu, Growths of Staggered InGaN Quantum Wells Light Emitting Diodes Emitting at nm Employing Graded Temperature Profile, SPIE Photonics West 2009, LEDs: Materials, Devices, and Applications for Solid State Lighting XIII, San Jose, CA, January [C20] H. Zhao, H. Tong, A. M. Driscoll, M. Jamil, G. S. Huang and N. Tansu, Characteristics of Narrow-bandgap InN Semiconductors Grown on Ga-Polar and N-Polar GaN Templates by Pulsed Metalorganic Vapor Phase Epitaxy, SPIE Photonics West 2009, Gallium Nitride Materials and Devices IV, San Jose, CA, January [C19] (Invited Conference Paper) N. Tansu, H. Zhao, R. A. Arif, Y. K. Ee, G. Liu, X. Li, and G. S. Huang, Polarization Engineering of InGaN-Based Nanostructures for Low-Threshold Diode Lasers and High-Efficiency Light Emitting Diodes, the IEEE Photonics Global 2008, Nanophotonics Symposium, Singapore, Republic of Singapore, December [C18] (Invited Conference Paper) N. Tansu, R. A. Arif, H. Zhao, G. S. Huang, and Y. K. Ee, Polarization Engineering of III-Nitride Nanostructures for High-Efficiency Light Emitting Diodes, SPIE Optics + Photonics 2008, The 8 th International Conference on Solid State Lighting, San Diego, CA, August [C17] M. Jamil, H. Zhao, J. Higgins, and N. Tansu, Narrow Band Gap (0.77 ev) InN on GaN / Sapphire Substrate by Pulsed MOCVD Growth Mode, the TMS Electronics Material Conference (EMC) 2008, Santa Barbara, CA, June [C16] (Invited Conference Paper) N. Tansu, R. A. Arif, Y. K. Ee, H. Zhao, H. Tong, M. Jamil, and G. S. Huang, Nano- Engineering of III-Nitride Semiconductor Optoelectronics and New Applications, the International Conferences of Materials and Technologies (CIMTEC) rd International Conference on Smart Materials, Structures and Systems, Sicily, Italy, June [C15] M. Jamil, H. Zhao, J. Higgins, and N. Tansu, MOVPE Growth and Photoluminescence of Narrow-Bandgap InN Alloys on GaN / Sapphire Substrate Using Pulsed Growth Mode, the 14 th Int. Conf. Metalorganic Vapor Phase Epitaxy (IC-MOVPE XIV) 2008, Metz, France, June [C14] R. A. Arif, H. Zhao, Y. K. Ee, S. T. Penn, V. Dierolf, and N. Tansu, Spontaneous Recombination Rate and Luminescence Efficiency of Staggered InGaN Quantum Wells Light Emitting Diodes, the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2008, San Jose, CA, May [C13] R. A. Arif, H. Zhao, and N. Tansu, InGaN-GaNAs Type-II W Quantum Well Lasers for Emission at 450-nm, the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2008, San Jose, CA, May [C12] H. Zhao, R. A. Arif, G. S. Huang, Y. K. Ee, and N. Tansu, Self-Consistent Optical Gain Analysis and Epitaxy of Strain-Compensated InGaN-AlGaN Quantum Wells for Laser Applications, the IEEE/OSA Conference on Lasers and Electro-Optics (CLEO) 2008, San Jose, CA, May [C11] H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, Approaches for Low-Threshold Green Nitride Lasers Diodes, in IEEE Semiconductor Lasers Workshop 2008, San Jose, CA, May [C10] R. A. Arif, Y. K. Ee, H. Zhao, and N. Tansu, Radiative Efficiency and Spontaneous Recombination Rate of Staggered InGaN Quantum Wells Light Emitting Diodes Emitting at nm, SPIE Photonics West 2008, Light- Emitting Diodes: Research, Manufacturing, and Applications XII, San Jose, CA, January Page 9 of 17

10 [C9] H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, Optical Gain and Spontaneous Emission of Strain-Compensated InGaN-AlGaN Quantum Wells Including Carrier Screening Effect, SPIE Photonics West 2008, Physics and Simulation of Optoelectronics Devices XVI, San Jose, CA, January [C8] H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, Optical Gain Analysis of Staggered InGaN Quantum Wells Active Regions for Lasers Emitting at nm, the 20 th IEEE Laser and Electro-Optics Society (LEOS) Annual Meeting 2007, Lake Buena Vista, FL, October [C7] H. Zhao, R. A. Arif, Y. K. Ee, and N. Tansu, Optical Gain Analysis of Strain Compensated InGaN-AlGaN Quantum Well Active Regions for Lasers Emitting at nm, the 7 th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2007), Newark, DE, September [C6] Y. K. Ee, H. Zhao, R. A. Arif, M. Jamil, and N. Tansu, Self-Assembled InGaN Quantum Dots on GaN Grown by Metalorganic Vapor Phase Epitaxy, the 13 th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) 2007, Salt Lake City, UT, August [C5] (Invited Conference Paper) R. A. Arif, Y. K. Ee, H. Zhao, M. Jamil, and N. Tansu, Nanostructure Engineering of InGaN-Based Active Regions for Improved III-Nitride Gain Media Emitting at nm, the European MRS (E- MRS) Spring Meeting 2007: Symposium F: Novel Gain Materials and Devices Based on III-N-V Compounds, Strasbourg, France, May-June [C4] Q. Wang, H. Mu, X. Zhang, W. Lei, J. Wang, H. Zhao, C. Huang, and Y. Wang, Field Emitters with Low Turn On Electric Field Based on Carbon Fibers, The 7 th IEEE International Vacuum Electronics Conference and Sixth IEEE International Vacuum Electron Sources Conference, California, USA, Apr [C3] C. Li, W. Lei, X. Zhang, H. Zhao, and G. Yang, A New Structure to Improve the Luminance Efficiency of a FED Panel, The 7 th IEEE International Vacuum Electronics Conference and 6 th IEEE International Vacuum Electron Sources Conference, California, USA, Apr [C2] H. Zhao, W. Lei, X. Zhang, and G. Yang, Numerical Analysis of the Performance of Field Emission Display with Secondary Electrons Emission, The 7 th IEEE International Vacuum Electronics Conference and 6 th IEEE International Vacuum Electron Sources Conference, California, USA, Apr [C1] H. Zhao, W. Lei, X. Zhang, W. Gu, and Y. Zhang, Simulation of the distribution of carbon nanotube-based cathodes for microwave tubes, The 18 th Vacuum Nanoelectronics Conference IVNC 2005, Oxford UK, Jan Other Technical Publications 1. W. Gu, M. Yang, H. Zhao, X. Yang, and W. Lei, S-correction in very slim CRT, Journal of Southeast University, 20(3), , H. Zhao, W. Lei, X. Zhang, W. Gu, and X. Li, Structure design for electron beam controlling in microwave tube with carbon nanotube cathode, Journal of Southeast University, 22(2), , Non-Refereed Workshops 1. S. Rafique, L. Han, H. Zhao, Transmission Electron Microscopy of InN Wires, Microscopy Society of Northeastern Ohio May 21 st Meeting, John Carroll University, Cleveland Heights, Ohio, USA, May Patents or Invention Disclosures [P9] Hongping Zhao, Subrina Rafique, and Lu Han, Method for Depositing Gallium Oxide Thin-Films (US Patent Application) [P8] Hongping Zhao, Enhanced Light Extraction Efficiency for Light-emitting Diodes. (US Patent Pending). [P7] Nelson Tansu, Hongping Zhao, and Guangyu Liu, Novel Staggered InGaN Quantum Well Light-Emitting Diodes. (US Patent Pending). [P6] Nelson Tansu, Hongping Zhao, and Guangyu Liu, Novel Supercontinuum Broadband White Light-Emitting Diodes. (US Patent Pending). [P5] Nelson Tansu, Guangyu Liu, and Hongping Zhao, Ultrahigh Density Nitride Quantum Dots. (US Patent Pending). [P4] Nelson Tansu, Hongping Zhao, Jing Zhang, and Guangyu Liu, Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes, US Patent No. 8,685,767. [P3] Nelson Tansu, Ronald A. Arif, Yik Khoon Ee, and Hongping Zhao, Staggered composition quantum well method and device, US Patent No. 8,659,005. Page 10 of 17

11 [P2] Nelson Tansu, Hongping Zhao, Guangyu Liu, and Ronald A. Arif, Nitride Based Quantum Well Light-Emitting Devices Having Improved Current Injection Efficiency. Methods to Suppress Efficiency Droop for High Power Nitride Light-Emitting Diodes, US Patent No. 8,907,321; issued on 12/09/2014. [P1] Nelson Tansu, Xiao-Hang Li, Hongping Zhao, Guangyu Liu, James F. Gilchrist, and Pisist Kumnorkaew, Broadband light emitting diodes and method for producing same, US Patent No. 8,569,737; issued on 10/29/2013. Invited Seminars [T17] Hongping Zhao, Department of Physics, Purdue University, West Lafayette, IN, September [T16] Hongping Zhao, Wide and Ultra-Wide Bandgap Semiconductors for Optoelectronics and Electronics, ECE Seminar, The Ohio State University, Columbus, OH, March [T15] Hongping Zhao, Synthesis, Physics and Devices of WBG and UWBG Semiconductors for Optoelectronics and Electronics Applications, Department of Electrical Engineering, New York State of University at Buffalo, Buffalo, NY, November [T14] Hongping Zhao, Synthesis, Physics and Devices of WBG and UWBG Semiconductors for Optoelectronics and Electronics Applications, Department of Material Science and Engineering, Case Western Reserve University, Cleveland, OH, September [T13] Hongping Zhao, Physics and Devices of WBG Nitrides and UWBG Ga2O3 for Optoelectronics and Electronics Applications, SSEP Seminar, The Ohio State University, Columbus, OH, September [T12] Hongping Zhao, III-nitrides Light Emitting Diodes for Solid State Lighting and the Emerging II-IV-Nitrides, Department of Physics, Kent State University, Kent, OH, March 2016 (Department Colloquium). [T11] Hongping Zhao, Self-Assembled Approach to Form III-nitride Microdomes for Light-Emitting Diodes and Solar Cells, Nano-Network, Case Western Reserve University, Cleveland, OH, September [T10] Hongping Zhao, Light Extraction Efficiency and Light Collection Efficiency in III-nitride based Light-Emitting Diodes and Solar Cells, Department of Physics, John Carroll University, University Heights, OH, March 2013 (Department Colloquium). [T9] Hongping Zhao, Engineering of InGaN Quantum Wells with Large Overlap for High Efficiency III-Nitride LEDs, Lifetime and Degradation Science (L&DS) Workshop, Case Western Reserve University, Cleveland, OH, November [T8] Hongping Zhao, Enhancement of Light Extraction Efficiency for Ultraviolet and Visible LEDs with III-nitride Microdomes, Lifetime and Degradation Science (L&DS) Workshop, Case Western Reserve University, Cleveland, OH, November [T7] Hongping Zhao, III-Nitride Light Emitting Diodes for Solid State Lighting, Solar Durability Workshop, Case Western Reserve University, Cleveland, OH, April [T6] Hongping Zhao, III-Nitride Light Emitting Diodes for Solid State Lighting, Department of Physics, Case Western Reserve University, Cleveland, OH, March [T5] Hongping Zhao, III-Nitride Semiconductor Photonics Device Technologies for Energy Applications, Case Western Reserve University, Cleveland, OH, December [T4] Hongping Zhao, Enhancement of Internal Quantum Efficiency for Nitride Light-Emitting Diodes, Intel Corporation, Hillsboro, OR, November [T3] Hongping Zhao, Enhancement of Internal Quantum Efficiency for Nitride Light-Emitting Diodes, Philips Lumileds, San Jose, CA, August [T2] Hongping Zhao, III-Nitride Semiconductor Photonics Device Technologies for Energy Applications, IBM Research - T. J. Watson Research Center, Yorktown Heights, NY, August [T1] Hongping Zhao, III-Nitride Semiconductor Photonics Device Technologies for Energy Applications, Department of Electrical Engineering and Computer Science, Syracuse University, Syracuse, May Selected Research Works Featured in Magazine / Newspapers 1. More Efficient LEDs for a Brighter Future in NanoBriefs of Resolve magazine, vol.2, Fall National Science Foundation (NSF), Defense Advanced Research Projects Agency (DARPA) see the light on Lehigh s wide bandgap semiconductor research in Lehigh News Center Highlight, September 26 th Bridging the Green LED Gap to Provide Greener Lighting in Lehigh News Center Highlight, April 11 th Page 11 of 17

12 4. Finding Energy Solutions in Cover Story Feature section of Lehigh Alumni Bulletin, Winter Illuminating Ideas: Innovations in Solid-State Lighting in US Department of Energy (DOE) National Energy Technology Laboratory (NETL) Press Release, February Optics Graduate Student Repeats as International Award Winner in Lehigh News Center Highlight, June 23 rd Hongping Zhao makes a 'Case' for Lehigh doctoral studies excellence in Lehigh News Center Highlight, April 18 th Years of Women at Lehigh in Lehigh Home, September 9 th Physics Top Ten: Higgs Bosons, Neutrinos, Polymer Solar Cells, and Stellar Surveys Vie for Attention, Jan What s Hot in Physics, H.P. Zhao, et al., Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells, Optics Express, 19(4): A , 4 July [rank No. 5] 10. Best Student Presentation Award to Subrina Rafique, in AVS Chapter meeting, Oct Ruth Barber Moon Award (Graduate Award) to Lu Han, in Case Western Reserve University, May Midwest Energy News 40 Under 40 award, Sep Outreach (for Middle School and High School Students) 1. Nelson Tansu, Ronald A. Arif, Hongping Zhao, Hua Tong, Muhammad Jamil, and Yik Khoon Ee, Semiconductor Nanotechnology for High Energy Efficient Applications, Outreach Program, OptoCamp 2007 Center for Optical Technologies, Lehigh University, Bethlehem, Pennsylvania, USA, August 13 th Nelson Tansu, Ronald A. Arif, Hongping Zhao, Hua Tong, Yik Khoon Ee, Xiaohang Li, and Guangyu Liu, Semiconductor Nanotechnology for High Energy Efficient Applications, Outreach Program, OptoCamp 2008 Center for Optical Technologies, Lehigh University, Bethlehem, Pennsylvania, USA, August Hongping Zhao, Y.-K Ee, Color Sensors, SPIE Lehigh Student Chapter Outreach Program to teach topics in optics to middle school students, Springhouse Middle School, Allentown, Pennsylvania, USA, November 17 th Hongping Zhao, et. al., Summer CHOICES Program, Engineering Summer Camp for Middle-School Girls, which is a popular hands-on learning experience in engineering and science for 6 th, 7 th, or 8 th grade middle-school girls. Lehigh University, July Nelson Tansu, Hongping Zhao, Hua Tong, Yik Khoon Ee, Xiaohang Li, and Guangyu Liu, Semiconductor Nanotechnology for High Energy Efficient Applications, Outreach Program, OptoCamp 2009 Center for Optical Technologies, Lehigh University, Bethlehem, Pennsylvania, USA, August Served as a Special Awards judge to select winners for SPIE s Optics and Photonics Science Fair Awards at the Northeast Ohio Science and Engineering Fair, Cleveland State University, March Professional and Synergistic Services 1. Editorial Board Member Photonics, MDPI Basel, Feb present 2. US National Science Foundation (NSF) Panel Member - CMMI, Arlington, VA, Nov SBIR/STTR Phase I, Arlington, VA, Sep SBIR/STTR Phase I, Arlington, VA, Feb US National Science Foundation (NSF) Ad Hoc Proposal Reviewer - DMR, Jan Page 12 of 17