Gou-Chung Chi Publication List 2009/04/24

Transcription

1 Gou-Chung Chi Publication List 2009/04/24 (A) Journal Papers 1. G. C. Chi and G. S. Cargill, Structural Anisotropy of Amorphous Cobalt-Phosphorus Alloys, Bull. Am. Phys. Soc. (Ser.II) 20, 865 (1975). 2. G. C. Chi and G. S. Cargill, Annealing Effects in Amorphous Co-P Alloys, Materials Science and Engineering 23, 155 (1976). 3. G. C. Chi and R. J. Schutz, Microstructures in Amorphous Nb 3 Ge Films, Materials Science and Engineering 34, 161 (1978). 4. G. C. Chi, H. S. Chen, and C. E. Miller, The Influence of Quenching Procedures on the Kinetics of Embrittlements in a Fe 40 Ni 40 B 20 Metallic Glass, J. Appl. Phys. 49, 1715 (1978). 5. G. S. Cargill and G. C. Chi, Inhormogeneities in Amorphous Gd-Co-Based Alloys, J. Appl. Crystallography, Vol. II (1978). 6. G. C. Chi and B. Bagley, Internal Oxidation in Glassy Cu 65 Zr 35 as Studied by Samll-Angle X-ray Scattering, J. Appl. Crystallography, Vol. II (1978). 7. G. C. Chi and G. S. Cargill, Structural Characterization of Amorphous Electrodeposited Cobalt-Phosphorus Alloys, J. Appl. Phys. 50, 2713 (1979). 8. R. Cocholan and G. C. Chi, Transmission of 24 GHz Radiation through Co-P from 4K to 414K, J. Appl. Phys. 50(11), 7674 (1979). 9. G. C. Chi, C. J. Mogab, A. D. Burtherus, and A. G. Lehner, The Magnetoresistivity, Structure and Magnetic Anisotropy of RF Sputtered and E-Beam Evaporated NiFe Films, J. Appl. Phys. 52, 2439 (1981). 10. H. S. Chen and G. C. Chi, Mechanical Properities and Magnetic Behavior of Deformed Metal Glass Wires, J. Appl. Phys. 55, 1796 (1984). 11. G. C. Chi and S. Nakahara, The Microstructure of Thin AlCu(4.5%) Films Deposited by Sputtering Techniques, Materials Letter 2, 380 (1984). 12. C. Y. Chen and G. C. Chi, Low Noise Ga 0.47 In 0.53 As Photoconductive Detectors Using Fe Compensation, Appl. Phys. Lett. 45, 1083, (1984). 13. G. C. Chi and C. J. Mogab, RIE Planarization for Magnetic Bubble Devices, IEEE Transactions on Magnetics MAG-21, 1170 (1985). 14. K. D. Cummings, L. R. Harriott, G. C. Chi, and F.W. Ostermayer, Using Focused Ion Beam Damage Patterns to Photoelectrochemically Etch Features in III-V Materials, Appl. Phys. Lett. 48, 659 (1986). 15. G. C. Chi, F. W. Ostermayer, K. D. Cummings and L. R. Harriott, Ion Beam Damage-Induced Masking for Photoelectrochemical Etching of III-V Semiconductors, J. Appl. Phys. 60, 4012 (1986). 共 23 頁第 1 頁

2 16. G. C. Chi, D. J. Muehlner, F. W. Ostermayer, J. M. Fruend, R. Pawelek, R. J. Mecoy, L. J. Peticolas and V. D. Mattera, A planar Avalanche Photodiode with a Low Doped, Reduced Curvature Junction, Appl. Phys. Lett. 50, 1158 (1987). 17. G. C. Chi, D. J. Muehlner, F. W. Ostermayer, J. M. Fruend, K. J. O Brieu, R. Pawelek, R. J. Mecoy, R. C. Smith and V. D. Mattera, Planar InP/InGaAsP three Dimensional Graded-Junction Avalanche Photodiode, IEEE Transaction on Electron Devices ED-34, 2265 (1987). 18. M. Thakur and G. C. Chi, Thin Single Crystal Films of Organic, Waveguiding in PTS Films, Synthetic Metals 28, D595 (1989). 19. M. C. Hung and G. C. Chi, A Tri-Layer Pattern Transfer Technique by Reactive Ion Teching, MRS Bull Res. Dev. 4, 89 (1990). 20. C. P. Song and G. C. Chi, High Radiance InGaAsP/InP Lensed LEDs for Optical Conmunication Systems at 1.3 μm, MRL Bull. Res. Dev. 6, 45 (1992). 21. G. C. Chi and C. Juang, GaAs/A1GaAs Quantum Well Infrared Detectors with an Integral Silicon Grating, Jpn. J. Appl. Phys. 33, 2483 (1994). 22. G. C. Chi, An E-Beam Evaporated Borosilicate Glass Thin Film as an Encapsulant for Annealing Be-implant InP, Materials Chemistry and Physics 39, 6971 (1994). 23. J. K. Hsu, C. Juang, B. J. Lee, and G. C. Chi, Photoluminescence Studies of Interstitial Zn in InP due to Rapid Thermal Annealing, J. Vac. Sci. Technol. B 12, 1416 (1994). 24. G. C. Chi, Y. K. Su, M. J. Jou and W. C. Hung, Window Layers for Current Spreading in AlGaInP Light-emitting Diode, J. Appl. Phys. 76, 2603 (1994). 25. G. C. Chi and C. Juang, Top Sawtooth Grating for GaAs/AlGaAs Quantum Well IR Detector, Materials Science & Engineerieng B 35, 56 (1995). 26. J. D. Guo, C. F. Lin, M. S.Feng, F. M. Pan, G. C. Chi and C. T. Lee, A Bilayer Ti/Ag Ohmic Contact for Highly Doped n-type GaN Films, Appl. Phys. Lett. 68, 8 (1996). 27. C. H. Lee, G. C. Chi, C. F. Lin, M. S. Feng and J. D. Guo, The X-Ray Crystallographic Study of The GaN Epitaxial Films on Al 2 O 3 (0001) with GaN Buffer Layers, Appl. Phys. Lett. 68, 3440 (1996). 28. C. F. Lin, G. C. Chi, J. D. Guo, and M. S. Feng, The Dependence of The Electrical Characteristic of The GaN Epitaxial Layer on The Thermal Treatment of The GaN Buffe Layer, Appl. Phys. Lett. 68, 3758 (1996). 29. J. K. Sheu, Y. K. Su, S. J. Chang, M. J. Jou, and G. C. Chi, AlGaInP/GaP Light-Emitting Diodes Fabricated by Wafe Direct Bonding Technology, Jpn. J. Appl. Phys. 35, 4199 (1996). 30. C. F. Lin, H. C. Cheng, J. A. Huang, M. S. Feng, J. D. Guo, and G. C. Chi, Mobility Enhancements in 2DEG in AlGaN/GaN/SiC with Stair-Step and Graded Heterostructures, Appl. Phys. Lett. 70, 2583 (1997). 共 23 頁第 2 頁

3 31. C. F. Lin, H. C. Cheng, G. C. Chi, M. S. Feng, J. D. Guo, J. Hong, and C.Y. Chen, Growth and Characterizations of GaN on SiC Substrate with Buffer Layers, J. Appl. Phys. 82, 2378 (1997). 32. G. C. Chi and S. Y. Hong, The Fabrication of a Small Guard-Ring Avalanche Photodiodes with an Uniform Gain Profile, JCIEE 4, 209 (1997). 33. C. F. Lin, H. C. Cheng, M. S. Feng, G. C. Chi, Characterization of GaN epitaxial layers on SiC substrates with Al x Ga 1-x N buffer layers, Materials Science & Engineering Β 50, 25 (1997). 34. J. K. Sheu, Y. K. Su, G. C. Chi, W. C. Chen, C. Y. Chen, C. N. Huang, Y. C. Yu, C. W. Wang, TheEffect of Thermal Annealing on the Ni/Au contact of p-type GaN, J. Appl. Phys. 83, 3172 (1998). 35. B. J. Pong, C. J. Pan, Y. C. Teng, G. C. Chi, W. H. Li, K. C. Lee, and C. H. Lee, Structural Defects and Microstrain in GaN Induced by Mg Ion-Implantation, J. Appl. Phys. 83, 5992 (1998). 36. J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, and C. M. Chang, Effects of Thermal Annealing on the Indium Tin Oxide Shottky Contacts of n-gan, Appl. Phys. Lett. 72, 22 (1998). 37. J. K. Sheu, Y. K. Su, G. C. Chi, B. J. Pong, C. Y. Chen, C. N. Huang, and W. C. Chen, Photoluminescence Spectroscopy of Mg-doped GaN, J. Appl. Phys. 84, 4590 (1998). 38. J. K. Sheu, Y. K. Su, S. J. Chang, G. C. Chi, K. B. Lin, C. C. Liu, and C. C. Chiu, Electrical Derivative Characteristics of Ion-Implanted AlGaInP/GaInP Multi-Quantum Well Lasers, Solid State Electronics 42, 1867 (1998). 39. J. K. Sheu, Y. K. Su, S. J. Chang, M. J. Jou, C. C. Liu, and G. C. Chi, Investigation of Wafer-Bonded (Al x Ga 1-x ) 0.5 In 0.5 P/GaP Light Emitting Diodes, IEE Proc-Optoelectron 145, 248 (1998). 40. T. Y. Lin, H. M. Chen, M. S. Tsai, Y. F. Chen, F. F. Fang, C. F. Lin, and G. C. Chi, Two-Dimensional Electron Gas and Persistent Photoconductivity in Al x Ga 1-x N/GaN Heterostructures, Physical Review B 58, (1998). 41. J. K. Sheu, Y. K. Su, S. J. Cheng, M. J. Jou, C. C. Lin, and G. C. Chi, Investigation of Wafer-Bonded (Al x Ga 1-x ) 0.5 In 0.5 P/GaP Light-Emitting Diodes, Apasiology 12, 248 (1998). 42. C. J. Pan and G. C. Chi, The Doping of GaN with Mg Diffusion, Solid State Electronics 43, 621 (1999). 43. J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. C. Liu, C. M. Chang, and W. C. Hung, Inductively Coupled Plasma Etching of GaN using Cl 2 /Ar and Cl 2 /N 2 Gases, J. Appl. Phys. 85, 1970 (1999). 44. J. Y. Chen, C. J. Pan, and G. C. Chi, Electrical and Optical Changes in the Near Surface of Reactively Ion Etched n-gan, Solid State Electronics 43, 649 (1999). 45. C. C. Yang, G. C. Chi, C. K. Huang, and M. C. Wu, The Improvement of GaN 共 23 頁第 3 頁

4 Epitaxial Layer Quality by the Design of Reactor Chamber Spacing, J. Cryst. Growth. 200, 32 (1999). 46. C. C. Yang, C. K. Huang, G. C. Chi, and M. C. Wu, Growth and Characterization of GaN by Atmosphere Pressure Metalorganic Chemical-Vapor Deposition with a Novel Separate Flow Reactor, J. Cryst. Growth. 200, 39 (1999). 47. J. K. Sheu, Y. K. Su, G. C. Chi, P. K. Kon, M. J. Jou, C. M. Chang, C. C. Liu, and W. C. Huang, High-Transparency Ni/Au Ohmic contact to p-type GaN, Appl. Phy. Lett. 74, 2340 (1999). 48. C. C. Yang, M. C. Wu, C. A. Chang, and G. C. Chi, Effectiveness of Multiple-Pair Buffer Layer to Improve the GaN Layers Grown by Metalorganic Chemical Vapor Depositon, J. Appl. Phys. 85, 8427 (1999). 49. J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, and C. C. Liu, The Indium Tin Oxide Ohmic Contact to Highly Doped n-gan, Solid State Electronics 43, 2081 (1999). 50. C. C. Yang, M. C. Wu, C. H. Lee, and G. C. Chi, X-Ray Diffraction Characterization of Epitaxial Zinc-Blende GaN Films on a Miscut GaAs (001) Substrates Using the Hybride Vapor Phase Epitaxy Method, accepted to be published in J. Cryst. Growth (1999). 51. C. C. Yang, M. C. Wu, C. A. Chang, and G. C. Chi, Effects of Multiple Buffers on Structural Electronic Properties of GaN Growth by Atmospheric Perssure Organometallic Vapor Phase Epitzxy, Materials Science and Engineering B 206, 8 (1999). 52. C. C. Yang, P. L. Koh, M. C. Wu, C. H. Lee, and G. C. Chi, Effects of H 2 /NH 3 Flow-Ratio on the Luminescent, Structural, and Electrical Properties of GaN Epitaxial Layers Grown b MOCVD, to appear in J. of Electronic Materials, Oct. (1999). 53. C. C. Yang, M. C. Wu, and G. C. Chi, Improvement of GaN Layer Quality by Using the Bulk-GaN Buffer Structure Grown by MOCVD, J. Appl. Phys. 86, 6120 (1999). 54. G. C. Chi, C. H. Kuo, J. K. Sheu and C. J. Pan, The Doping Process of p-type GaN Films, Materials Science and Engineering B 75, 210 (2000). 55. J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, C. C. Liu, W. C. Hung, J. S. Bow and Y. C. Yu, The formation of Ti / Al Ohmic contact on etched n-gan surfaces, J. Vac. Sci. Technol. B 18, 729 (2000). 56. J. K. Sheu, Y. K. Su, G. C. Chi, and M. J. Jou, Growth and characterization of InGaN/GaN muti-quantum well light-emitting diodes, J. Chinese Institute of Electrical Engineering 7, 219 (2000). 57. J. K. Sheu, G. C. Chi, Y. K. Su, C. C. Lin, M. C. Chang, W. C. Hung, and M. J. Jou, Luminescence of an InGaN/GaN Multiple Quantum Wells Light-Emitting Diodes, 共 23 頁第 4 頁

5 Solid State Electronics 44, 1055 (2000). 58. C. F. Lin, H. C. Cheng, and G. C. Chi, W Ohmic Contact for Highly Doped N-Type GaN Films, Solid State Electronics 44, 757 (2000). 59. C. C. Yang, M. C. Wu, C. H. Lee, and G. C. Chi, Microstructural Evolution in a Multiple Composite Layer of GaN on Sapphire by Organometallic Vapor Phase Epitaxy, J. Appl. Phys. 87, 4240 (2000). 60. Y. K. Su, G. C. Chi, and J. K. Sheu, Optical properties in InGaN/GaN multiple quantum wells and blue LEDs, Optical materials 14, 205 (2000). 61. C. C. Chen, H. W. Chuang, G. C. Chi, C. C. Chuo, and J. I. Chyi, Stimulated emission study of high indium content InGaN/GaN multiple quantum well structures, Appl. Phys. Lett. 77, 3758 (2000). 62. C. F. Lin, H. C. Cheng, C. C. Chang, and G. C. Chi, Properties of Mg activation in thermally treated GaN:Mg films, J. Appl. Phys. 88, 6515 (2000). 63. J. K. Sheu, C. H. Kuo, G. C. Chi, C. C. Chen and M. J. Jou, Characterization of the Properties of Mg-doped Al 0.15 Ga 0.85 N/GaN superlattices, Solid-State Electronics 45, 1665 (2001). 64. T. C. Wen, W. I. Lee, J. K. Sheu and G. C. Chi, Characterization of p-type In x Ga 1-x N grown by metalorganic chemical vapor deposition, Solid-State Electronics 45, 427 (2001). 65. J. K. Sheu, G. C. Chi, and M. J. Jou, Low-operation voltage of InGaN/GaN light-emitting diodes by using a Mg-doped Al 0.15 Ga 0.85 N/GaN superlattice IEEE Electron Device Letters 22, 160 (2001). 66. C. H. Kuo, J. K. Sheu, G. C. Chi, Y. L. Huang, and T. W. Yeh, Low-resistance Ni/Au ohmic contact to Mg-doped of Al 0.15 Ga 0.85 N/GaN superlattices, Solid-State Electronics 45, 717 (2001). 67. J. K. Sheu, G. C. Chi, and M. J. Jou Enhanced output power in an InGaN/GaN multi-quantum well light-emitting diode with Asymmetric wells, IEEE Photonics Technology Letters 13, 1164 (2001). 68. J. K. Sheu, J. M. Tsai, S. C. Shei, W. C. Lai, T. C. Wen, C. H. Kou, Y. K. Su, S. J. Chang and G. C. Chi, Low-operation voltage of InGaN/GaN light-emitting diodes with Si-doped In 0.3 Ga 0.7 N/GaN short-period superlattice tunneling contact layer, IEEE Electron Device Letters 22, 460 (2001). 69. C. C. Lee, L. W. Wu, and G. C. Chi, Activation analysis of rapid thermally annealed Si and Mg co-implanted semi-insulating GaAs, Nucl. Iustrum. Meth. B 178, 265 (2001). 70. C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. Y. Chi, C. A. Chang, J. K. Sheu, and J. F. Chen, GaN metal-semiconductor-metal Ultraviolet photodetectors with transparent indium-tin oxide Schottky contacts, IEEE Photonics Technology 共 23 頁第 5 頁

6 Letters 13, 848 (2001). 71. C. C. Chen, K. L. Hsieh, G. C. Chi, C. C. Chuo, J. I. Chyi, and C. A. Chang, Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures, J. Appl. Phys. 89, 5465 (2001). 72. C. C. Chen, T. H. Hsueh, Y. S. Ting, G. C. Chi, and C. A. Chang, Effects of In and Ga Interdiffusion on the Optical Gain of InGaN/GaN Quantum Well, J. Appl. Phys. 90, 5180 (2001). 73. C. C. Chen, K. L. Hsieh, J. K. Sheu, G. C. Chi, M. J. Jou, C. H. Lee, and M. Z. Lin, Crystal orientation dependence of optical gain in InGaN/GaN multiple quantum well structure, Appl. Phys. Lett. 79, 1477 (2001). 74. J. K. Sheu, M. S. Tsai, C. J. Tun, and G. C. Chi, n + -GaN formed by Si implantation into p-gan, J. Appl. Phys. 91, 1845 (2002). 75. T. C. Wen, W. I. Lee, J. K. Sheu, and G. C. Chi, Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching, Solid-State Electronics 46, 555 (2002). 76. C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, C. H. Chen, and G. C. Chi, Low temperature activation of Mg-doped GaN in O 2 ambient, Jpn. J. Appl. Phys. 41, L112 (2002). 77. C. H. Chen, Y. K. Su, S. J. Chang, G. C. Chi, J. K. Sheu, J. F. Chen, C. H. Liu, and Y. H. Laiw, High-brightness green light emitting diodes with charge asymmetric resonance tunneling structure, IEEE Electron Device Letters 23, 130 (2002). 78. C. H. Kuo, S. J. Chang, Y. K. Su, L. W. Wu, J. K. Sheu, C. H. Chen, and G. C. Chi, InGaN/GaN light emitting diodes activated in O 2 ambient, IEEE Electron Device Letters 23, 240 (2002). 79. J. K. Sheu and G. C. Chi, The doping process and dopant characteristics of GaN, Journal of Physics 14, R657 (2002). 80. J. K. Sheu, C. J. Pan, G. C. Chi, C. H. Kou, L. W. Wu, C. H. Chen, S. J. Chang and Y. K. Su, White-light emission from InGaN/GaN multi-quantum well light-emitting diodes with Si and Zn co-doped active well layer, IEEE Photonics Technology Letters 14, 450 (2002). 81. C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu and J. F. Chen, High efficient InGaN/GaN MQW green light-emitting diodes with CART and DBR structures, IEEE J. Selected topics in Quantum Electronics 8, 284 (2002). 82. M. L. Lee, J. K. Sheu, L. S. Yeh, M. S. Tsai, C. J. Kao, C. J. Tun, S. J. Chang, and G. C. Chi, GaN p-n junction diode formed by Si ion implantation into p-gan, Solid-State Electronics 46, 2179 (2002). 83. J. K. Sheu, M. L. Lee, C. J. Tun, C. J. Kao, L. S. Yeh, C. C. Lee, S. J. Chang, and G. C. Chi, Characterization of Si implants in p-type GaN, IEEE J. Selected topics 共 23 頁第 6 頁

7 in Quantum Electronics 8, 767 (2002). 84. C. C. Chen, K. L. Hsieh, J. K. Sheu, G. C. Chi, M. J. Jou, C. H. Lee, M. Z. Lin, Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure, Material Science and Engineering B 93, 28 (2002). 85. J. K. Sheu, M. L. Lee, L. S. Yeh, C. J. Kao, C. J. Tun, M. J. Chen, G. C. Chi, S. J. Chang, Y. K. Su, and C. T. Lee Planar GaN n + -p photodetectors formed by Si implants into p-gan, Appl. Phys. Lett. 81, 4263 (2002). 86. C. C. Chen, K. L. Hsieh, G. C. Chi, C. C. Chuo, J. I. Chyi, C. A. Chang, Thermal annealing effects on stimulated emission of high-indium-content InGaN/GaN single quantum well structure, Solid State Electronics 46, 1123 (2002). 87. C. C. Chen, S. R. Hwang, W. H. Li, K. C. Lee, G. C. Chi, H. T. Hsiao, and C. G. Wu, Enhanced electroluminescence and stability of polymer light-emitting diodes with direct polyaniline synthesized anodes, Polymer J. 34, 271 (2002). 88. C. C. Chen, J. Y. Chang, and G. C. Chi, Design of GaN convex diffractive microlenses, Optics and Laser Technology 34/7, 569 (2002). 89. Y. S. Huang, C. C. Chen, G. C. Chi, and J. Y. Chang, Design of off-axis micro-mirrors, Journal of Optical Memory & Neural Networks 11, 245 (2002). 90. J. W. Chiou, S. Mookerjee, K. V. R. Rao, J. C. Jan, H. M. Tsai, K. Asokan, W. F. Pong, F. Z. Chien, M. H. Tsai, Y. K. Chang, Y. Y. Chen, J. F. Lee, C. C. Lee, and G. C. Chi, Angle-dependent x-ray absorption spectroscopy study of Zn-doped GaN, Appl. Phys. Lett. 81, 3389 (2002). 91. C. C. Chen, M. H. Li, C. Y. Chang, J. K. Sheu, G. C. Chi, W. T. Cheng, J. H. Yeh, J. Y. Chang, and T. Ito, GaN diffractive microlenses fabricated with gray-level mask, Optics Communications 215, 75 (2003). 92. J. K. Sheu, S. J. Chang, C. H. Kuo, Y. K. Su, L. W. Wu, Y. C. Lin, W. C. Lai, J. M. Tsai, G. C. Chi, and R. K. Wu, White-Light Emission From Near UV InGaN-GaN LED Chip Precoated With Blue/Green/Red Phosphors, IEEE Photonics Technology Letters 15, 18 (2003). 93. L. S. Yeh, M. L. Lee, J. K. Sheu, M. G. Chen, C. J. Kao, G. C. Chi, S. J. Chang, and Y. K. Su, Visible-blind GaN PIN photodiodes with an Al 0.12 Ga 0.88 N/GaN superlattice structure, Solid-State Electronics 47, 873 (2003). 94. X. D. Chen, Y. Huang, S. Fung, C. D. Beling, C. C. Ling, J. K. Sheu, M. L. Lee, S. J. Chang, and G. C. Chi, Deep level defect in Si-implanted GaN n + -p junction, Appl. Phys. Lett. 82, 3671 (2003). 95. J. K. Sheu, C. J. Kao, M. L. Lee,W. C. Lai, L. S. Yeh, G. C. Chi, S. J. Chang, Y. K. Su, and J. M. Tsai, Nitride-based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer, Journal of Electronic Materials 共 23 頁第 7 頁

8 32, 400 (2003). 96. R. C. Tu, C. J. Tun, J. K. Sheu, W. H. Kuo, T. C. Wang, C. E. Tsai, J. T. Hsu, J. Chi, and G. C. Chi, Improvement of InGaN/GaN laser diodes by using a Si-doped In 0.23 Ga 0.77 N/GaN short-period superlattice tunneling contact layer, IEEE Electron Device Letters 24, 206 (2003). 97. S. J. Chang, M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, C. S. Chang, C. J. Kao, G. C. Chi, and J. M. Tsai, GaN Metal-Semiconductor-Metal photodetectors with low-temperature GaN cap layers and ITO metal contacts, IEEE Electron Device Letters 24, 212 (2003). 98. M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen, C. J. Kao, J. M. Tsai, and G. C. Chi, GaN Schottky barrier photodetectors with a low-temperature GaN cap layer, Appl. Phys. Lett. 82, 2913 (2003). 99. C. C. Chen, Y. S. Ting, C. C. Lee, G. C. Chi, P. Chakraborty, T. Chini, H. W. Chuang, J. S. Tsang, C. T. Kuo, W. C. Tsai, S. H. Chen, J. I. Chyi, Er diffusion into gallium nitride, Solid-State Electronics 47, 529, (2003) C. C. Chen, T. H. Hsueh, Y. S. Ting, G. C. Chi, C. A. Chang, and S. C. Wang, Thermal annealing effects on the optical gain of InGaN/GaN quantum well structures, Solid-State Electronics 47, 575 (2003) M. L. Lee, J. K. Sheu, W. C. Lai, Y. K. Su, S. J. Chang, C. J. Kao, C. J. Tun, M. G. Chen, W. H. Chang, G. C. Chi, and J. M. Tsai, Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer, J. Appl. Phys. 94, 1753 (2003) Y. S. Ting, C. C. Chen, J. K. Sheu, G. C. Chi, and J. T. Hsu, Electrical efficiency analysis of GaN-based LEDs with interdigitated mesa geometry, J. Electronic Materials 32, 312 (2003) F. Bresson, C. C. Chen, G. C. Chi, Y. W. Chen, Simplified sedimentation process for 3D photonic thick layers/bulk crystals with a stop-band in the visible range, Applied Surface Science 217/1-4, 281 (2003) C. H. Hou, M. H. Li, C. C. Chen, J. Y. Chang, J. K. Sheu, G. C. Chi, C. Wu, W. T. Cheng, and J. H. Yeh, GaN Diffractive Microlenses Using in UV Micro-Optics System, Optical Review 10, 287 (2003) C. C. Lee, Y. C. Chang, J. Y. Chang, C. F. Chiu, and G. C. Chi, Fabrication of Optical Transmission Elements in an SiNx Membrane, Microelectron. Eng. 69, 10 (2003) C. C. Lee, Y. C. Chang, C. M. Wang, J. Y. Chang, and G. C. Chi, Si-based transmissive diffractive optical element, Optics. Letters. 28, 1260 (2003) Y. S. Ting, C. C. Chen, C. C. Lee, G. C. Chi, T. Chini, P. Chakraborty, H. W. Chuang, J. S. Tsang, C. T. Kuo, W. C. Tsai, S. H. Chen, and J. I. Chyi, Diffusion 共 23 頁第 8 頁

9 mechanism and photoluminescence of erbium in GaN, Optical Materials 24/3, 515 (2003) R. C. Tu, C. C. Chuo, S. M. Pan, Y. M. Fan, C. E. Tsai, T. C. Wang, C. J. Tun, G. C. Chi, B. C. Lee, and C. P. Lee, Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiN x interlayer in n-gan layers, Appl. Phys. Lett. 83, 3608 (2003) R. C. Tu, C. J. Tun, S. M. Pan, C. C. Chuo, J. K. Sheu, C. E. Tsai, T. C. Wang, and G. C. Chi, Improvement of near-ultraviolet InGaN/GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature, IEEE Photonics Technology Letters 15, 1342 (2003) R. C. Tu, C. J. Tun, S. M. Pan, H. P. Liu, C. E. Tsai, J. K. Sheu, C. C. Chuo, T. C. Wang, G. C. Chi, and I. G. Chen, Improvement of near-ultraviolet InGaN/GaN light-emitting diodes through higher pressure grown underlying GaN layers, IEEE Photonics Technology Letters 15, 1050 (2003) M. L. Lee, J. K. Sheu, Y. K. Su, S. J. Chang,W. C. Lai, and G. C. Chi, Reduction of dark current in AlGaN/GaN Schottky barrier photodetectors with a low-temperature-grown GaN cap layer, IEEE Electron Device Letters 25, 593 (2004) C. C. Chen, C. H. Hou, J. K. Sheu, J. Y. Chang, M. H. Li, G. C. Chi, and C. Wu, Grating in GaN Membranes, Jpn. J. Appl. Phys. 43, 5854 (2004) C. J. Pan, G. C. Chi, B. J. Pong, J. K. Sheu and J. Y. Chen, Si Diffusion in p-gan, J. Vac. Sci. Technol. B 22, 1727 (2004) C. J. Kao, J. K. Sheu, W. C. Lai, M. L. Lee, M. C. Chen, and G. C. Chi, Effect of GaN cap layer grown at a low temperature on electrical characteristics of Al 0.25 Ga 0.75 N/GaN heterojunction field-effect transistors, Appl. Phys. Lett. 85, 1430 (2004) R. C. Tu, C. J. Tun, C. C. Chuo, B. C. Lee, C. E. Tsai, T. C. Wang, J. Chi, C. P. Lee, and G. C. Chi, Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor deposition, Jpn J. Appl. Phys. 43, L264 (2004) C. J. Pan, C. W. Tu, J. J. Song, G. Cantwell, C. C. Lee, B. J. Pong, and G. C. Chi, Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy, J. Cryst. Growth 282, 112 (2005) K. Ip, R. Khanna, D. P. Norton, S. J. Pearton, F. Ren, I. Kravchenko, C. J. Kao, and G. C. Chi, Improved Thermal Stability CrB 2 Contacts on ZnO, Jpn. J. Appl. Phys. 44, 7291 (2005) H. S. Yang, S. Y. Han, Y. W. Heo, K. H. Baik, D. P. Norton, S. J. Pearton, F. Ren, A. Osinsky, J. W. Dong, B. Hertog, A. M. Dabiran, P. P. Chow, L. Chernyak, T. Steiner, C. J. Kao, and G. C. Chi, Fabrication of Hybrid 共 23 頁第 9 頁

10 n-znmgo/n-zno/p-algan/p-gan Light-Emitting Diodes, Jpn. J. Appl. Phys. 44, 7296 (2005) J. K. Sheu, S. S. Chen, M. L. Lee, W. C. Lai, and G. C. Chi, Effects of Thermal Annealing on Si-Implanted GaN Films Grown at Low Temperature by Metallorganic Vapor Phase, Journal of The Electrochemical Society 152, G813 (2005) J. K. Sheu, M. L. Lee, W. C. Lai, H. C. Tseng, and G. C. Chi, Rectifying characteristics of WSi 0.8 -GaN Schottky barrier diodes with a GaN cap layer grown at low temperature, J. Appl. Phys. 98, (2005) C. Y. Chang, G. C. Chi, W. M. Wang, L. C. Chen, K. H. Chen, F. Ren, and S. J. Pearton, Transport properties of InN nanowires, Appl. Phys. Lett. 87, (2005) C. J. Kao, Y. W. Kwon, Y. W. Heo, D. P. Norton, S. J. Pearton, F.Ren, and G. C. Chi, Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition, J. Vac. Sci. Technol. B 23, 1024 (2005) K. Ip, R. Khanna, D. P. Norton, S. J. Pearton, F. Ren, I. Kravchenko, C. J. Kao, and G. C. Chi, Thermal Stability of W 2 B and W 2 B 5 Contacts on ZnO, Appl. Surf. Sci. 252, 1846 (2005) R. Khanna, S. J. Pearton, F. Ren, I. Kravchenko, C. J. Kao, and G. C. Chi, W 2 B-Based Ohmic Contacts to n-gan, Appl. Surf. Sci. 252, 1826 (2005) C. J. Pan, W. M. Wang, C. W. Tu, C. J. Tun, and G. C. Chi, Heteroepitaxial ZnO films grown by plasma-assisted molecular beam epitaxy, Journal of Taiwan Vacuum Society 18, 82 (2005) C. J. Tun, J. K. Sheu, B. J. Pong, M. L. Lee, M. Y. Lee, C. K. Hsieh, C. C. Hu, and G. C. Chi, Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer, IEEE Photonics Technology Letters 18, 274 (2006) C. J. Tun, J. K. Sheu, M. L. Lee, C. C. Hu, C. K. Hsieh, and G. C. Chi, Effects of thermal annealing on Al-doped ZnO films deposited on p-type gallium nitride, Journal of The Electrochemical Society 153, G296 (2006) C. J. Pan, B. J. Pong, B. W. Chou, G. C. Chi, and C. W. Tu, Photoluminescence of nitrogen-doped ZnO, Phys. Status Solidi C 3, 611 (2006) C. H. Hou, C. C. Chen, B. J. Pong, M. H. Li, G. C. Chi, N. C. Chen, C. F. Shih, and P. H. Chang, GaN-based stacked micro-optics system, Appl. Opt. 45, 2396 (2006) C. Y. Chang, F. C. Tsao, C. J. Pan, G. C. Chi, H. T. Wang, J. J. Chen, F. Ren, D. P. Norton, S. J. Pearton, K. H. Chen, and L. C. Chen, Electroluminescence from ZnO 共 23 頁第 10 頁

11 nanowire/polymer composite p-n junction, Appl. Phys. Lett. 88, (2006) C. H. Kuo, S. J. Chang, G. C. Chi, K. T. Lam, and Y. S. Sun, Nitride-based light emitting diodes with quaternary p-alingan surface layers, Phys. Status Solidi C 3, 2153 (2006) C. Y. Chang, G. C. Chi, W. M. Wang, L. C. Chen, K. H. Chen, F. Ren, and S. J. Pearton, Electrical transport properties of single GaN and InN nanowires, J. Electron. Mater. 35, 738 (2006) G. W. Shu, P. F. Wu, Y. W. Liu, J. S. Wang, J. L. Shen, T. Y. Lin, P. J. Pong, G. C. Chi, H. J. Chang, Y. F. Chen, and Y. C. Lee, Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers, J. Phys.: Condens. Matter 18, L543 (2006) M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, C. J. Tun, and G. C. Chi, Planar ultraviolet photodetectors formed by Si implantation into p-gan, Journal of The Electrochemical Society 153, G799 (2006) M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, and G. C. Chi, Planar GaN p-i-n photodiodes with n + -conductive channel formed by Si implantation, Appl. Phys. Lett. 88, (2006) M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Tun, and G. C. Chi, Improved performance of planar GaN-based p-i-n photodetectors with Mg-implanted isolation ring, Appl. Phys. Lett. 89, (2006) C. H. Kuo, C. W. Kuo, C. M. Chen, B. J. Pong, and G. C. Chi, Nitride-based light-emitting diodes with p-alingan surface layers prepared at various temperatures, Appl. Phys. Lett. 89, (2006) C. H. Kuo, C. M. Chen, C. W. Kuo, C. J. Tun, C. J. Pan, B. J. Pong, and G. C. Chi, Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers, Appl. Phys. Lett. 89, (2006) C. Y. Chang, T. W. Lan, G. C. Chi, L. C. Chen, K. H. Chen, J. J. Chen, S. Jang, F. Ren, and S. J. Pearton, Effect of ozone cleaning and annealing on Ti/Al/Pt/Au ohmic contacts on GaN nanowires, Electrochem. Solid State Lett. 9, G155 (2006) C. Y. Chang, S. J. Pearton, P. J. Huang, G. C. Chi, H. T. Wang, J. J. Chen, F. Ren, K. H. Chen, and L. C. Chen, Control of nucleation site density of GaN nanowires, Appl. Surf. Sci. 253, 3196 (2007) C. H. Kuo, H. C. Feng, C. W. Kuo, C. M. Chen, L. W. Wu, and G. C. Chi, Nitride-based near-ultraviolet light emitting diodes with meshed p-gan, Appl. Phys. Lett. 90, (2007) C. J. Tun, C. H. Kuo, Y. K. Fu, C. W. Kuo, C. J. Pan, and G. C. Chi, Dislocation reduction in GaN with multiple Mg x N y /GaN buffer layers by metal organic chemical vapor deposition, Appl. Phys. Lett. 90, (2007). 共 23 頁第 11 頁

12 143. C. J. Pan, C. W. Tu, C. J. Tun, C. C. Lee, and G. C. Chi, Structural and optical properties of ZnO epilayers grown by plasma-assisted molecular beam epitaxy on GaN/sapphire (0001), J. Cryst. Growth 305, 133 (2007) M. D. Yang, J. L. Shen, M. C. Chen, C. C. Chiang, S. M. Lan, T. N. Yang, M. H. Lo, H. C. Kuo, T. C. Lu, P. J. Huang, S. C. Hung, G. C. Chi, and W. C. Chou, Optical studies of InN epilayers on Si substrates with different buffer layers, J. Appl. Phys. 102, (2007) J. Y. Chen, Y. M. Liao, C. C. Lee, and G. C. Chi, Fabrication of low-stress SiN x H y membranes deposited by PECVD, J. Electrochem. Soc. 154, D227 (2007) S. Y. Wu, J. Y. Ji, M. H. Chou, W. H. Li, and G. C. Chi, Low-temperature phase separation in GaN nanowires: An in situ x-ray investigation, Appl. Phys. Lett. 92, (2008) J. Y. Chen, G. C. Chi, P. J. Huang, M. Y. Chen, S. C. Hung, C. H. Nien, M. C. Chen, S. M. Lan, B. J. Pong, C. J. Pan, C. J. Tun, F. Ren, C. Y. Chang, and S. J. Pearton, Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy, Appl. Phys. Lett. 92, (2008) S. C. Hung, Y. L. Wang, B. Hicks, S. J. Pearton, D. M. Dennis, F. Ren, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum, and G. C. Chi, Detection of chloride ions using an integrated Ag/AgCl electrode with AlGaN/GaN high electron mobility transistors, Appl. Phys. Lett. 92, (2008) F. C. Tsao, J. Y. Chen, C. H. Kuo, G. C. Chi, C. J. Pan, P. J. Huang, C. J. Tun, B. J. Pong, T. H. Hsueh, C. Y. Chang, S. J. Pearton, and F. Ren, Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001), Appl. Phys. Lett. 92, (2008) W. C. Lai, J. K. Sheu, Y. K. Fu, C. H. Kuo, C. W. Kuo, C. J. Tun, C. J. Pan, and G. C. Chi, Four-wavelengths-mixed white light emitting diodes with dual-wavelength-pumped green and red phosphors, Jpn. J. Appl. Phys. 47, 6317, (2008) S. C. Hung, Y. L. Wang, B. Hicks, S. J. Pearton, F. Ren, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum, and G. C. Chi, Integration of selective area anodized AgCl thin film with AlGaN/GaN HEMTs for Chloride ion detection, Electrochemical and Solid-State Letters 11, H241, (2008) C. H. Kuo, C. L. Yeh, P. H. Chen, W. C. Lai, C. J. Tun, J. K. Sheu, and G. C. Chi, Low operation voltage of nitride-based LEDs with Al-doped ZnO transparent contact layer, Electrochemical and Solid-State Letters 11, H269, (2008) S. C. Hung, P. J. Huang, C. E. Chan, W. Y. Uen, F. Ren, S. J. Pearton, T. N. Yang, C. C. Chiang, S. M. Lan, and G. C. Chi, Nanostructured surface morphology of ZnO grown on p-type GaN and Si by metal organic chemical vapor deposition, Appl. Suf. Sci. 255, 3016 (2008). 共 23 頁第 12 頁

13 154. Y. K. Fu, C. H. Kuo, C. J. Tun, W. C. Lai, G. C. Chi, C. J. Pan, M. C. Chen, H. F. Hong, and S. M. Lan, Self-assembled InN dots grown on GaN with an In 0.08 Ga 0.92 N intermediate layer by metal organic chemical vapor deposition, J. Cryst. Growth 310, 4456 (2008) K. I. Lin, J. T. Tsai, T. S. Wang, J. S. Hwang, M. C. Chen, and G. C. Chi, Drift current dominated terahertz radiation from InN at low-density excitation, Appl. Phys. Lett. 93, (2008) P. J. Huang, C. W. Chen, J. Y. Chen, G. C. Chi, C. J. Pan, C. C. Kuo, L. C. Chen, C. W. Hsu, K. H. Chen, S. C. Hung, C. Y. Chang, S. J. Pearton, and F. Ren, Optical and structural properties of Mg ion implanted GaN nanowires, Vacuum 83, 797 (2009) S. M. Lan, W. Y. Uen, C. E. Chan, K. J. Chang, S. C. Hung, Z. Y. Li, T. N. Yang, C. C. Chiang, P. J. Huang, M. D. Yang, G. C. Chi, C. Y. Chang, Morphology and optical properties of zinc oxide thin films grown on Si (100) by metal-organic chemical vapor deposition, Journal of Materials Science-Materials in Electronics 20, S441 (2009) S. C. Hung, B. H. Chou, C. Y. Chang, C. F. Lo, K. H. Chen, Y. L. Wang, S. J. Pearton, A. Dabiran, P. P. Chow, G. C. Chi, and F. Ren, Minipressure sensor using AlGaN/GaN high electron mobility transistors, Appl. Phys. Lett. 94, (2009) C. J. Pan, J. Y. Chen, G. C. Chi, B. W. Chou, B. J. Pong, F. Ren, C. Y. Chang, and S. J. Pearton, Optical investigation of nitrogen ion implanted bulk ZnO, Vacuum 83, 1073 (2009) J. Y. Chen, C. J. Pan, F. C. Tsao, C. H. Kuo, G. C. Chi, B. J. Pong, C. Y. Chang, D. P. Norton, and S. J. Pearton, Characterization of ZnO nanowires grown on Si (100) with and without Au catalyst, Vacuum 83, 1076 (2009). (B) Conference Papers 1. G. C. Chi and G. S. Cargill, Perpendicular Anisotropy of Amorphous, Electrodeposited Cobalt-Phosophorus Alloy Films, AIP Conference Proceedings, No.29, (1976). 2. G. C. Chi and G. S. Cargill, Radial Distribution Functions for Amorphous Co-P Alloys, AIP Conference Proceedings, No.31, (1976). 3. R. Cochran and G. C. Chi et al., Hyperfind Field Studies of Amorphous Co-P Alloys, AIP Conference Proceedings, No.31, (1976). 4. G. C. Chi and F. W. Ostermayer, Micron Features in III-V Materials by Photoelectrochemical Etching of Focused Ion induced Beam Damage Patterns, SPIE Proceedings, No.11, (1986). 5. M. Thakur and G. C. Chi, Some Fundamental Aspects of the Thin Film Organization and Device Structure Fabrication of Polydiacetylenes, Mat. Res. Soc. 共 23 頁第 13 頁

14 Symp. Proc. Vol. 109, 41 (1988). 6. G. C. Chi, Invited Paper, Plannar InP/InGaAsP Avalanche Photodiode Fabricat with a Novel Photoelectrochemical Etching Technology, SPIE's International Optoelectronics and Laser Applications Conference, Conf. Proc. Vol. 988, (1988). 7. M. Thakur and G. C. Chi, Growth and Nonlinear Optical Properties of Single Crystal Films of Ploydiacetylenes, SPIE conference on Growth and Nonlinear Optical Properties of Materials, Florida (1989). 8. G. C. Chi, Multi-Mode Capped-Mesa Buried-Heterostructure Laser Diode with Reduced Contact and Etched Trench, European Materials Research Conference, May, Proc. Non-Stoichiometry in Semiconductors, p Published Elsevier (1992). 9. G. C. Chi, Invited paper, GaAs/AlGaAs Quantum Well Infrared Detector Arrays with Integral Silicon Grating, 1st. Pacific Rim International Conference on Advanced Materials and Processing Hangzhou, China June (1992). 10. C. Juang and G. C. Chi, Energy States of Finite-Barrier Quantum Wire in the Presence of an External Electric Field, Conference Proc. on Quantum Electronic and Laser Science 1991, Baltimore, Paper No.QWD G. C. Chi and M. C. Hong, A Tri-Layer Photoresist Mask to Form Guard-Rings for Planar Avalanche Photodiodes, Conference Proc. the Chinese Society for Materials Science, p April 1991, Tainan, Taiwan. 12. M. C. Hong and G. C. Chi, Etching Residue and Polymer Formation During a Trilayer Process by Reactive Ion Etching, 8th International Conference Ion & Plasma Assisted Techniques, Conf. Proc. May, 1991, p K. S. Tin and G. C. Chi, CHF 3 and NH 3 Additives for Reactive Ion Etching of GaAs Using CCl 2 F 2 and SiCl 4, Mat. Res. Soc. Symp. Proc. Vol. 240, p , (1992) Boston U.S.A. 14. K. S. Tin and G. C. Chi, Investigation of GaAs Deep Etching by Using Reactiv Ion Etching Technique, Mat. Res. Soc. Symp. Proc. Vol. 240, p , (1992) Boston, U.S.A. 15. C. H. Wang, M. S. Feng, and G.C. Chi, Spin-on Glass for the Semiconductor Processing Applications, Proc. 4-5,6, 1993 Annual Conf. of the Chinese Soc. for Mat. Sci. 16. T. S. Wu, G. C. Chi et al., Fabrication of Silica Optical Channel Waveguide by Reactive Ion Etching, Proc , 110, 1993 Annual conf. of the Chinese Soc. for Mat. Sci. 17. W. C. Hong, Y. K. Su, and G. C. Chi, Investigatio of Current Speading Effects in AlGaInP LED by Numerical Calculation and Experiments, Proc.4-117, 118, 1993 Annual Conf. of the Chinese Soc. for Mat. Sci. 18. S. W. Chiu, Y. K. Su, and G. C. Chi, Brightness Improvement of Visible Light 共 23 頁第 14 頁

15 Emitting Diodes Using AlGaIn/PAlInP and GaAs/AlInP Bragg Reflectors, Proceedings of International Conference on Electronic Devices & Materials, July, 1994 Hsinchu, Taiwan. 19. M. S. Feng, J. D. Kuo, and G. C. Chi, Growth and Characterization of GaN/InGaN By Low Pressure Metalorganic Chemical Vapor Deposition, invited paper, Electrochmical society proceedings vol.95-21, p. 43 (1995). 20. M. S. Tsai, T. Y. Lin, C. F. Huang, C. F. Lin, G. C. Chi, Y. F. Chen, and F. F. Fang, 2DEG in GaN/AlGaN Heterostructures, Optoelectronics Workshop, Hsinchu W. H. Kuo and G. C. Chi, Luminescence Mechanism of InGaN/AlGaN Double-Heterostructure Light- Emitting Diodes, Taiwan Physical Society Annual meeting, Taipei, G. C. Chi, C. F. Lin, and M. S. Feng, Observation of a Two-Dimensional Electron Gas in the AlGaN/GaN on SiC Substrates, Mat. Res. Soc. symp. Proc. Vol.449, 627 (1997) Boston, U.S.A. 23. G. C. Chi, Invited Paper, Material Growth and Processing on GaN Epitaxial Films, Taiwan MRS. Annual Meeting, Taiwan G. C. Chi, B. J. Pong, C. J. Pan, and Y. C. Teng, Characterizations of Mg Implanted GaN, MRS. Symp. Proc. Vol. 482 (1997) Boston, U.S.A. 25. J. K. Sheu, Y. K. Su, G. C. Chi, M. J. Jou, C. M. Chang, C. C. Liu, and W. C. Hung, High-Transparency Ni/Au Ohmic Contact to P-type GaN The Second International Symposium on Blue Laser and Light Emitting Diodes Chiba, Japan Sept C. C. Yang, G. C. Chi, C. K. Huang, and M. C. Wu, The Improvement of GaN Epitaxial Layers Quality by Use of Separate-Flow Reactor, Proceedings of the 1998 International Photonics Conference, T-S1-B2, (1998), Taipei, Taiwan. 27. J. K. Sheu, S. J. Chang, Y. K. Su, G. C. Chi, M. J. Jou, C. C. Liu, C. M. Chang, W. C. Hung, and I. P. Huang, Inductively Coupled Plasma Etching of GaN Using Cl 2 /N 2 Gas, Proceedings of International Conference on Electronic Devices and Materials (IEDM 98), B1-6-P26, Dec. (1998), Tainan, Taiwan. 28. C. C. Chang, G. C. Chi, and J. R. Dun, Formation of p-type Gallium Nitride with Zn Ion Implantation, Invited paper, Electrochemical Society Proceeding, Vol.99-17, p.88 (1999) The 1999 Joint International Meeting in Hawaii, USA. 29. C. C. Yang, M. C. Wu, Y. C. Hung, and G. C. Chi, Growth Mechanism in the Multiple Buffer Layer of GaN on Sapphire by Organometallic Vapor Phase Epitaxy, Electrochemical Society Proceeding, Bol.99-17, p.20 (1999) The 1999 Joint International Meeting in Hawaii, USA. 30. J. K. Sheu, G. C. Chi, and M. J. Jou, Characteristics of an InGaN/GaN multiple quantum well light-emitting diode, Symposium W, MRS 1999 Fall Meeting, CA, 共 23 頁第 15 頁

16 USA. 31. Y. K. Su, G. C. Chi, and J. K. Sheu, Optical properties in InGaN/GaN multi-quantum wells and blue LEDs, IUMRS-ICA, July, 1999, Bejjing, China (invited presentation) 32. G. C. Chi, J. K. Sheu, and M. J. Jou, Growth and Characterization of InGaN/GaN Multi-Quantum Well Blue light-emitting Diodes, SPIE s Optoelectronics Jan, 2000, San Jose, CA, USA (invited presentation). 33. Y. K. Su, J. K. Sheu, G. C. Chi, and M. J. Jou, High performance GaN-based Multi-Quantum Well Blue light-emitting Diodes, International conference on electronic materials & European materials research society spring meeting, May, 2000 Strasbourg, France (invited presentation). 34. G. C. Chi, J. K. Sheu and M. J. Jou, InGaN/GaN multi-quantum well light-emitting diodes grown by low-pressure metalorganic vapor phase epitaxy, IUMRS, ICA, July, 2000, Hong Kong (invited presentation). 35. J. K. Sheu, G. C. Chi, C. C. Chen, C. C. Liu, C. M. Chang and M. J. Jou, Improved electrical property of InGaN/GaN light-emitting diodes by using a Mg-doped AlGaN/GaN superlattices, International Workshop on Nitride Semiconductors, Sep. 2000, Nagoya, Japan. 36. C. H. Kuo, J. K. Sheu, G. C. Chi, Y. L. Huang, and T.W. Yeh, Low-resistance Ni/Au ohmic contact to Mg-doped of Al 0.15 Ga 0.85 N/GaN superlattices, Proceedings of International Conference on Electronic Devices and Materials (IEDM 00) Dec. 2000, Chung-Li, Taiwan. 37. C. C. Lee, L. W. Wu, and G. C. Chi, Activation analysis of rapid thermally annealed Si and Mg co-implanted semi-insulating GaAs, E-MRS-IUMRS-ICEM L. W. Wu, C. C. Lee, G. C. Chi, Y. M. Hsin, Chia-Jen, K. P. Huseh, Ion implantation technology for improved GaAs MESFETs performance, Proceedings of International Conference on Electronic Devices and Materials (IEDM 00) Dec. 2000, Chung-Li, Taiwan. 39. C. C. Chen, H. W. Chuang, G. C. Chi, C. C. Chuo, and J. I. Chyi, Optical-pumping spectra for In x Ga 1-x N/GaN multiple quantum well structures with indium content x>0.35, Proc. of Photonics Taiwan 2000, C. C. Chen, H. W. Chuang, G. C. Chi, C. C. Chuo, and J. I. Chyi, Conduction-band discontinuity of high indium composition InGaN/GaN multiple quantum well structures measured by optical pumping, Proc. of Europe Material Research Society 2000, C-IV-6, Strasbourg, France. 41. C. C. Chen, H. W. Chuang, G. C. Chi, C. C. Chuo, J. I. Chyi, and C. A. Chang, Band offset parameter of the InGaN/GaN heterojunction, International 共 23 頁第 16 頁

17 Workshop on Nitride Semiconductors, 2000, Nagoya, Japan. 42. C. C. Chen, K. L. Hsieh, G. C. Chi, C. C. Chuo, J. I. Chyi, C. A. Chang, Optical Pumping Spectra of InGaN/GaN Quantum Well, International Photonics Conference, HsinTsu, Taiwan, Y. P. Liang, C. C. Chen, J. Y. Chang, and G. C. Chi, Characteristics of Refractive Microlenses Fabricated by Melted Photoresist, International Photonics Conference, HsinTsu, Taiwan, C. C. Chen, K. L. Hsieh, G. C. Chi, C. C. Chuo, J. I. Chyi, and C. A. Chang, Thermal annealing effects on stimulated emission of high-indium-content InGaN/GaN single quantum well structure, International Electron Devices and Materials Symposia, Chung-Li, Taiwan, L. Y. Chien, J. Y. Chen, C. C. Chen, G. C. Chi, J. Y. Chang, Fabrication and testing of diffractive microlenses with gray-scal mask, International Electron Devices and Materials Symposia, Chung-Li, Taiwan, T. H. Hsueh, C. C. Chen, L. S. Yeh, C. C. Lee, G. C. Chi, J. K. Sheu, and C. A. Chang, Piezoelectric field in InGaN/GaN multiple quantum well structure, International Electron Devices and Materials Symposia, Chung-Li, Taiwan, K. L. Hsieh, C. C. Chen, C. C. Lee, J. K. Sheu, G. C. Chi, C. C. Chuo, J. I. Chyi, and C. A. Chang, Spatially and spectrally resolved spectrum of GaN-based quantum well structures, International Electron Devices and Materials Symposia, Chung-Li, Taiwan, C. C. Chen, K. L. Hsieh, J. K. Sheu, G. C. Chi, M. J. Jou, C. H. Lee, and M. Z. Lin, Dependence of optical gain on direction of optically pumped cavity on (0001)-plane for InGaN/GaN multiple quantum well structure, Proc. of Europe Material Research Society 2001, H/PI.06, Strasbourg, France. 49. C. C. Chen, K. L. Hsieh, J. K. Sheu, G. C. Chi, M. J. Jou, C. H. Lee, and M. Z. Lin, Optical Gain of Optically Pumped Cavity on (0001)-plane for GaN-based Multiple Quantum Well Structures, EDMS 2001, Kaohsung, Taiwan, J. K. Sheu, C. J. Tun, C. J. Kao, G. C. Chi, J. M. Tsai, and S. C. Shei, InGaN/GaN light-emitting diodes with Si-doped In 0.23 Ga 0.77 N/GaN short-period superlattice tunneling contact layer, EDMS 2001, Kaohsung, Taiwan, J. K. Sheu, R. C. Tu, C. J. Tun, C. J. Kao, and G. C. Chi, InGaN/GaN light-emitting diodes with Si-doped In 0.23 Ga 0.77 N/GaN short-period superlattice tunneling contact layer, International Symposium on Blue Laser and Light Emitting Diodes, Cordoba, Spain, Mar. (2002) 52. C. C. Chen, C. C. Lee, J. Y. Cheng, Y. L. Huang, C. Y. Chang, M. H. Li, Y. S. Huang, L. Y. Chien, J. Y. Chang, G. C. Chi, W. T. Cheng, J. H. Yeh, and C. Wu, Microlens and micromirror for optical MEMS fabricated by e-beam 共 23 頁第 17 頁

18 photolithography and ICP etching, OC2002, Taipei, Taiwan, p. 322, C. C. Chen, F. Bresson, C. C. Lee, J. Y. Cheng, Y. L. Huang, C. Y. Chang, J. Y. Chang, G. C. Chi, and Y. W. Chen, Defect in 3-D photonic crystal formed by self-organization sedimentation, OC2002, Taipei, Taiwan, p. 71, C. C. Chen, M. H. Li, C. Y. Chang, G. C. Chi, J. Y. Chang, W. T. Cheng, J. H. Yeh, and C. Wu, Fabrication of high-na GaN diffractive microlenses, Optical MEMS, Lugano, Switzerland, WP3, C. C. Chen, M. H. Li, C. Y. Chang, G. C. Chi, J. Y. Chang, W. T. Cheng, J. H. Yeh, C. Wu, and T. Ito, GaN diffractive microlens, ODF 2002, Tokyo, Japan. 56. M. H. Li, C. C. Chen, and G. C. Chi, The GaN diffractive microlenses, OPT2002, Taipei, T. Y. Sheng, C. C. Chen, J. K. Sheu, G. C. Chi, and J. T. Hsu, Efficiency analysis of GaN-based LED with interdigitated mesa geometry, IEDMS 2002, Taipei, C. C. Lee, Y. C. Chang, J. Y. Chang, C. F. Chiu, and G. C. Chi, The Fabrication of Optical Transmission Elements in an SiN x Membrane, OPT L. S. Yeh, M. L. Lee, J. K. Sheu, M. G. Chen, C. J. Kao, G. C. Chi, S. J. Chang, and Y. K. Su, Visible-blind GaN p-i-n photodiodes with an Al 0.12 Ga 0.88 N/GaN superlattice structure, OPT 2002, Taipei, Taiwan, C. C. Lee, J. Y. Chang, Y. C. Chang, and G. C. Chi, A Novel Si-based Stacked Free Space pick-up head And Holographic Optical Element, CLEO C. Y. Chang, J. Y. Chen, B. J. Pong, C. C. Lee, H. C. Tseng, Y. M. Liao, W. F. Chiu, C. H. Nien, and G. C. Chi, Electrical characteristics of silver nanowires, International symposium on nano science and technology, C-P-01, Tainan, Taiwan, 4-7 November J. K. Sheu, G. C. Chi, and Y. K. Su GaN-based visible-blind photodetectors, First Asia-pacific workshop on widegap semiconductors, (APWS-2003), March 9-12,2003, Hyogo, Japan. 63. C. J. Kao, J. K. Sheu, M. C. Chen, M. L. Lee, C. J. Tun, and G. C. Chi, Low-dark current, high-sensitivity GaN MSM UV photodetectors with low-temperature GaN insulator layer, EDMS 2003, Keelung, Taiwan, C. J. Kao, Y. W. Heo, D. P. Norton, S. J. Pearton, F. Ren, and G. C. Chi, Comparison of ZnO MOSFET and MESFET Structures Grown on Sapphire by Pulsed Laser Deposition, 2004 MRS Fall Meeting, Boston, U.S.A, R. Khanna, S. J. Pearton, F. Ren, I. Kravchenko, C. J. Kao, and G. C. Chi, W 2 B Based Ohmic Contacts to n-gan, 2004 MRS Fall Meeting, Boston, U.S.A, C. J. Tun, J. K. Sheu, C. C. Chou, and G. C. Chi, Si-doped In 0.23 Ga 0.77 N/GaN 共 23 頁第 18 頁

19 short-period superlattice tunneling contact layer used on InGaN/GaN laser diode, 206 th Meeting of the Electrochemical Society, Hawaii, USA (2004). 67. M. C. Chen, J. K. Sheu, M. L. Lee, C. J. Kao, C. J. Tun, and G. C. Chi, Planar GaN-based UV photodetectors formed by Si implantation, 206 th Meeting of the Electrochemical Society, Hawaii, USA (2004). 68. C. Y. Chang, K. H. Chen, L. C. Chen, B. J. Pong, C. W. Hsu, and G.C. Chi, The temperature-dependent photoluminescence study of GaN nanowires, Annual Meeting of Physical Society, National Tsing-Hua University, Taiwan S. J. Pearton, D. P. Norton, Y. W. Heo, L. C. Tien, M. P. Ivill, Y. Li, Sang Youn Han, B. S. Kang, F. Ren, J. Kelly, A. F. Hebard, C. J. Kao, and G. C. Chi, Electronics Division Award Address-ZnO Spintronics and Nanowire Devices, Invited talk at the SOTAPOCS 42 symposium, ECS meeting, Quebec City, Canada, K. Ip, K. Rohit, D. Norton, S. Pearton, F. Ren, I. Kravchenko, C. J. Kao, and G. C. Chi, Thermal Stability of Tungsten-Based Schottky Contacts to N-Type ZnO, 2005 the 207th Meeting of The Electrochmical Society, Quebec, Canada, C. J. Kao, Y. W. Heo, D. P. Norton, S. J. Pearton, F. Ren, and G. C. Chi, ZnO-Based MOSFET and MESFET Grown on Sapphire, 2005 Annual Joint Symposium Florida Chapter of the AVS Science and Technology Society (FLAVS), Orlando, U.S.A., L. Voss, K. Ip, R. Khanna, C. J. Kao, I. Kravchenko, B. S. Kang, F. Ren, Y. W. Heo, D. P. Norton, G. C. Chi, and S. J. Pearton, High Thermal Stability W 2 B Ohmic Contacts to ZnO Ozone and ph Sensors, 2005 MRS Spring Meeting, San Francisco, U.S.A, C. J. Pan, C. W. Tu, J. J. Song, G. Cantwell, C. C. Lee, B. J. Pong, and G. C. Chi, Optical properties of homoepitaxial and heteroepitaxial ZnO grown by molecular beam epitaxy, SPIE Photonics West, San Jose, California, USA, January (2005). 74. R. Khanna, C. J. Kao, I. Kravchenko, F. Ren, G. C. Chi, S. J. Pearton, A. Dabiran, and A. Osinsky, High Thermal Stability W 2 B Ohmic Contacts to GaN, accepted by 2005 MRS, USA. 75. C. J. Pan, W. M. Wang, C. W. Tu, C. J. Tun, and G. C. Chi, Heteroepitaxial ZnO films grown by plasma-assisted molecular beam epitaxy, MBE Taiwan 2005, Hsinchu, Taiwan, May (2005). 76. C. J. Pan, W. M. Wang, C. W. Tu, J. J. Song, G. Cantwell, and G. C. Chi, Characteristics of ZnO epilayers grown by plasma-assisted molecular beam epitaxy on GaN/sapphire (0001), 47 th Electronic Materials Conference, Santa Barbara, California, USA, June (2005). 77. C. J. Pan, B. J. Pong, B. W. Chou, G. C. Chi, and C. W. Tu, Photoluminescence of nitrogen-doped ZnO, 32 nd International Symposium on Compound Semiconductors, Rust, Germany, September (2005). 共 23 頁第 19 頁

20 78. B. J. Pong, B. W. Chou, C. J. Pan, and G. C. Chi, Optical properties of phosphor ion implanted ZnO, SPIE Photonics West, San Jose, California USA, January (2006). 79. C. J. Tun, J. K. Sheu, B. J. Pong, M. L. Lee, M. Y. Lee, C. K. Hsieh, C. C. Hu, and G. C. Chi, Applications of transparent Al-doped ZnO contact on GaN-based power LED, SPIE Photonics West, San Jose, California, USA, January (2006). 80. F. C. Tsao, B. J. Pong, C. J. Pan, C. H. Kuo, and G. C. Chi, Characterizations of ZnO nanowires grown with and without Au catalyst, 2006 International Conference on Silicon Electronics and Photonics, Apr. 1-2, Taipei, Taiwan (2006). 81. P. J. Huang, B. J. Pong, C. Y. Chang, C. C. Yang, and G. C. Chi, The structure characteristics of GaN nanowires in the low temperature, 2006 International Conference on Silicon Electronics and Photonics, Apr. 1-2, Taipei, Taiwan (2006). 82. F. C. Tsao, B. J. Pong, C. H. Kuo, C. J. Pan, and G. C. Chi, Photoluminescence blueshift of ZnO nanowires grown by physical vapor deposition on GaN/Sapphire (0001), 2006 MRS Spring Meeting, Apr , San Francisco, California, USA (2006). 83. F. C. Tsao, C. J. Pan, B. J. Pong, C. H. Kuo, G. C. Chi, C. Y. Chang, D. P. Norton, and S. J. Pearton, Characterization of ZnO nanowires grown on Si (100) with and without Au catalyst, E-MRS IUMRS ICEM 2006 Spring Meeting, May 29 Jun. 2, Nice, France (2006). 84. C. J. Pan, C. J. Tun, C. C. Lee, B. J. Pong, G. C. Chi, and C. W. Tu, Structural and optical properties of ZnO epilayers grown by plasma-assisted molecular beam epitaxy on GaN/sapphire (0001) under different O/Zn flux ratios, MBE Taiwan 2006 and High-k Materials Workshop, Jun. 1-3, Jhongli, Taiwan (2006). 85. F. C. Tsao, P. J. Huang, C. J. Pan, C. J. Tun, C. H. Kuo, B. J. Pong, and G. C. Chi, Structural properties of ZnO nanowires grown by chemical vapor deposition on GaN/sapphire (0001), 2006 MRS Fall Meeting, Nov. 27-Dec. 1, Boston, Massachusetts, USA (2006). 86. F. C. Tsao, C. J. Pan, C. J. Tun, C. H. Kuo, B. J. Pong, G. C. Chi, and T. H. Hsueh, Characterizations of ZnO nanowires grown by chemical vapor deposition on Si or GaN/sapphire, 2006 International Electron Devices and Materials Symposia, Dec. 7-8, Tainan, Taiwan (2006). 87. S. C. Hung, P. J. Huang, F. C. Tsao, C. J. Pan, G. C. Chi, and S. M. Lahn, Characteristics of ZnO epilayers grown on Si (111) by metalorganic chemical vapor deposition at different temperatures, 2006 International Electron Devices and Materials Symposia, Dec. 7-8, Tainan, Taiwan (2006). 88. S. C. Hung, C. J. Pan, P. J. Huang, C. C. Lin, G. C. Chi, C. E. Chan, and S. M. Lahn, Zinc oxide nanostructures grown on p-type gallium nitride and silicon by metalorganic chemical vapor deposition, Optics and Photonics, Taiwan 2006, Dec. 共 23 頁第 20 頁