姓名劉醇星職稱副教授學歷成功大學電機博士辦公室 5504 電話 (06) 轉 電郵 半導體 顯示器元件研發處處長

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1 姓名劉醇星職稱副教授學歷成功大學電機博士辦公室 5504 電話 (06) 轉 3102 電郵 專長 經歷 半導體 顯示器元件研發處處長 1.Y. X. Sun, W. S. Chen, S. C. Hung, K. T. Lam, C. H. Liu, and Shoou-Jinn Chang, Member, IEEE, GaN-Based Power Flip-Chip LEDs With an Internal ESD Protection Diode on Cu Sub-Mount IEEE TRANSACTIONS ON ADVANCED PACKAGING, VOL. 33, NO. 2, MAY 2010,pp433~437 2.P.C. Changa, Y.K. Sua, K.J. Leeb, C.L. Yu, S.J. Chang, C.H. Liu, Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2, Journal of Alloys and Compounds 504S (2010) S429 S431 期刊 論文 3.K.H. LEE, P.C. CHANG, S.J. CHANG, Y.K. SU, Y.C. WANG, and C.H. LIU, High-Sensitivity Nitride-Based Ultraviolet Photosensors with a Low-Temperature AlGaN Interlayer, Journal of ELECTRONIC MATERIALS, Vol. 39, No. 1, pp29~33 (2010 ) 4.K T Lam, S C Hung, C F Shen, C H Liu, Y X Sun and S J Chang, Effects of the sapphire substrate thickness on the performances of GaN-based LEDs, Semicond. Sci. Technol. 24 (2009) (4pp) 5. 陳銘祥, 彭武華, 石政欣, 邱振威, 劉醇星 具漸層式結構 OLED 元件 之研製, 南榮學報第十二期,B11-1~11(2009) 6.C. H. Liu, T. K. Lam, T. K. Ko, S. J. Chang, and Y. X. Sund Highly ESD-Reliable, Nitride-Based Heterostructure p-i-n Photodetectors with a p-algan Blocking Layer, Journal of The Electrochemical Society, 155 (4) H232-H234 (2008) 7.P.C. Chang, C.L. Yu, S.J. Chang, C.H. Liu GaN Schottky photodiodes

2 with annealed Ir/Pt semi-transparent contacts, Thin Solid Films 516 (2008) P.C.Chang, K.T.Lam, C.H.Chen, S.J.Chang, C.L.Yu and C.H.Liu, AlGaN/GaN two-dimensional electron gas metal-insulator-semiconductor photodetectors with sputtered SiO2 layers,iet Optoelectron,2(1),pp.55-57, P.C. Chang,C. L. Yu, S. J. Chang, K. H. Lee, C. H. Liu and S. L. Wu, "High-detectivity nitride-based MSM photodetectors on InGaN-GaN multiquantum well with the unactivated Mg-doped GaN layer", IEEE J. Quan. Electron., Vol. 43, No. 11, pp , November P. C. Chang*, C. L. Yu, S. J. Chang, Y. C. Lin, C. H. Liu, and S. L. Wu, Low Noise and High Detectivity GaN-based UV Photodiodes with a Semi-insulating Mg-doped GaN Cap Layer, IEEE sensors Journal Vol. 7, No. 9, pp , September NSC E C. H. Liu, S. J. Chang, K. T. Lam and Y. S. Sun, "SiGe doped-channel field-effect transistor", Mater. Chem. Phys., Vol. 103, No. 2-3, pp , June P.C.Chang, C.L.Yu, C.H.Liu, S.J.Chang, Y.K.Su, R.W.Chuang and Y.J.Chiu Ir/Pt Schottky contact oxidation for nitride-based Schottky barrier diodes, Phys. Stat. Sol.(C)4, No.5,pp , April(2007). 13.C. H. Liu, K. T. Lam, S. J. Chang, C. K. Wang and Y. S. Sun, "Flicker noise of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor with a photo-cvd SiO2 Layer", J. Electrochem. Soc., Vol. 154, No. 2, pp. H119-H123, February W. C. Lai, K. T. Lam, C. H. Liu and S. J. Chang, " InGaN/GaN MQW structures prepared with various In and Ga flow rates", International J. Electron., Vol. 94, No. 1, pp. 1-7, January H. Hung, C. H. Chen, S. J. Chang, H. Kuan, R. M. Lin and C. H. Liu, "Kinetics of persistent photoconductivity in InGaN epitaxial films grown by MOCVD", J. Crystal Growth, Vol. 298, No. 1, pp , January 2007

3 16.C.H.Liu,T.K.Lin, S.J.Chang, Y.K.Su, Y.Z.Chiou, C.K.Wang, S.P.Chang J.J.Tang, B.R.Huang; Photo-assisted thermally oxideized GaAs insulator layers deposited by photo-cvd, Surface & Coatings Technology 200, pp , January M.C.Wei, S.J.Chang, C.Y.Tsia, C.H.Liu, S.C.Chen; SiNx deposited by in-line PECVD for multi-crystalline silicon solar cells, Solar Energy 80,pp , January C. H. Liu, T. K. Lin, S. J. Chang, GaAs MOS capacitors with photo-cvd SiO2 insulator layers, Solid-State Electronics 49, pp , September C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, L. W. Wu and C. C. Lin, "Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-gan rough surface", Mater. Sci. Eng. B, Vol. 112, No. 1, pp , September C. H. Liu, R. W. Chuang, S. J. Chang, Y. K. Su, C. H. Kuo, J. M. Tsai and C. C. Lin, "InGaN/GaN MQW blue LEDs with GaN/SiN double buffer layers", Mater. Sci. Eng. B, Vol. 111, No. 2-3, pp , August C.H.Liu,C.K.Wang,S.J.Chang and Y.K.Su, High transconductance nitride MOSHFETs, Mater. Sci. Eng. B, Vol. 110, pp.32-33, july P.C.Chang, C.H.Chen, S.J.Chang, Y.K.Su, P.C.Chen, Y.D.Jhou, C.H.Liu, H.Hung and C.M.Wang InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers, Jpn. J. Appl. Phys., Vol.43, No.4B, pp , April C. H. Liu, S. J. Chang, J. F. Chen, S. C. Chen, J. S. Lee and U. H. Liaw, "High quality ultra thin chemical-vapor-deposited Ta2O5 capacitors prepared by high density plasma annealing", Mater. Sci. Eng. B, Vol. 106, No. 3, pp , February 2004.

4 24.C. H. Liu, S. J. Chang, J. F. Chen, J. S. Lee, S. C. Chen and U. H. Liaw, "Electrical and reliability characteristics of cxynitride gate dielectric grown by diluted steam rapid thermal oxidation and annealed in nitric oxide", Mater. Sci. Eng. B, Vol. 107, No. 3, pp , March C. H. Liu, L. W. Wu, S. J. Chang, J. F. Chen, U. H. Liaw and S. C. Chen, "Ion Implantation technology for improved GaAs MESFETs performance", J. Mater. Sci.: Mater. Electron., Vol. 15, No. 2, pp , February S. J. Chang, Y. C. Lin, Y. K. Su, C. S. Chang, T. C. Wen, S. C. Shei, J. C. Ke, C. W. Kuo, S. C. Chen and C. H. Liu, "Nitride-based LEDs fabricated on patterned sapphire substrates", Solid State Electron., Vol. 47, No. 9, pp , September C. H. Liu, Y. K. Su, T. C. Wen, S. J. Chang and R. W. Chuang, "Nitride-based green light emitting diodes grown by temperature ramping", J. Crystal Growth, Vol. 254, No. 3-4, pp , July C. H. Liu, C. S. Chang S. J. Chang, Y. K. Su, Y. Z. Chiou, S. H. Liu and B. R. Huang, "The characteristics of photo-cvd SiO2 and its application on SiC MIS photodetectors", Mater. Sci. Eng. B, Vol. 100, No. 2, pp , July C. S. Chang, S. J. Chang, Y. K. Su, Y. Z. Chiou, Y. C. Lin, Y. P. Hsu, S. C. Shei, J. C. Ke, H, M, Lo, S. C. Chen and C. H. Liu, "InGaN/GaN light emitting diodes with rapid thermal annealed Ni/ITO p-contacts", Jpn. J. Appl. Phys., Vol. 42, No. 6A, pp , June S. J. Chang, S. C. Wei, Y. K. Su, C. H. Liu, S. C. Chen,U.H.Liaw, T. Y. Tsai and T. H. Hsu, "AlGaN/GaN MODFETs with an Mg-doped current confinement layer", Jpn. J. Appl. Phys., Vol. 42, No. 6A, pp , June C. H. Liu, Y. K. Su, L. W. Wu, S. J. Chang and R. W. Chuang, "Tunneling efficiency of n+-ingan/gan SPS tunneling contact layer for nitride-based LEDs", Semicond. Sci. Technol., Vol. 18, No. 6, pp , June 2003.

5 32.C. S. Chang, S. J. Chang, Y. K. Su, Y. C. Lin, Y. P. Hsu, S. C. Shei, S. C. Chen, C. H. Liu and U. H. Liaw, InGaN/GaN light emitting diodes with ITO p-contact layers prepared by RF sputtering, Semicond. Sci. Technol., Vol. 18, No. 4, pp. L21-L23, April C. H. Kuo, J. K. Sheu, S. J. Chang, Y. K. Su, L. W. Wu, J. M. Tsai, C. H. Liu and R. K. Wu, "n-uv+blue/green/red white light emitting diode lamps", Jpn. J. Appl. Phys., Vol. 42, No. 4B, pp , April S. J. Chang, C. H. Chen, Y. K. Su, J.K. Sheu, W. C. Lai, J. M. Tsai, C. H. Liu and S. C. Chen, "Improved ESD protection by combining InGaN/GaN MQW LED with GaN Schottky diode", IEEE Electron. Dev. Lett., Vol. 24, No. 3, pp , April J. S. Lee, S. J. Chang, J. F. Chen, S. C. Sun, C. H. Liu and U. H. Liaw, "Effects of O2 thermal annealing on the properties of CVD Ta2O5 thin films", Mater. Chem. Phys., Vol. 77, No. 1, pp , January Y. C. Lin, S. J. Chang, Y. K. Su, T. Y. Tsai, C. S. Chang, S. C. Shei, S. J. Hsu, C. H. Liu, U. H. Liaw, S. C. Chen and B. R. Huang, Nitride-based light emitting diodes with Ni/ITO p-type ohmic contacts, IEEE Photon. Technol. Lett., Vol. 14, No. 12, pp , December S. J. Chang, W. C. Lai, J. F. Chen, S. C. Chen, B. R. Huang, C. H. Liu and U. H. Liaw, "Be diffusion in GaN", Mater. Charact., Vol. 49, No. 4, pp , November S. J. Chang, J. S. Lee, J. F. Chen, S. C. Sun, C. H. Liu, U. H. Liaw and B. R. Huang, "Improvement of electrical and reliability properties of tantalum pentoxide by high density plasma (HDP) annealing in N2O", IEEE Electron. Dev. Lett., Vol. 23, No. 11, pp , November W. R. Chen, S. J. Chang, Y. K. Su, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu and U. H. Liaw, "ZnCdSeTe-based orange light emitting diode", IEEE Photon. Technol. Lett., Vol. 14, No. 8, pp , August W. R. Chen, S. J. Chang, Y. K. Su, J. F. Chen, W. H. Lan, W. J. Lin, Y. T.

6 Cherng, C. H. Liu and U. H. Liaw, "ZnSe epitaxial layers and ZnSSe/ZnSe strain layer superlattices grown by molecular beam epitaxy", Superlattice Microst., Vol. 32, No. 1, pp , July S. J. Chang, W. C. Lai, Y. K. Su, J. F. Chen, C. H. Liu and U. H. Liaw, "InGaN/GaN multiquantum well blue and green light emitting diodes", IEEE J. Sel. Top. Quan. Electron., Vol. 8, No. 2, pp , March/April C. H. Chen, Y. K. Su, S. J. Chang, G. C. Chi, J. K. Sheu, J. F. Chen, C. H. Liu and U. H. Liaw, "High brightness green light emitting diode with charge asymmetric resonance tunneling structure", IEEE Electron. Dev. Lett., Vol. 23, No. 3, pp , March J. S. Lee, S. C. Sun, S. J. Chang, J. F. Chen, C. H. Liu and U. H. Liaw, "Effects of interfacial oxide layer for the Ta2O5 capacitor after high temperature annealing", Jpn. J. Appl. Phys., Vol. 41, No. 2A, pp , February S. J. Chang, Y. K. Su, W. R. Chen, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu and U. H. Liaw, "ZnSTeSe metal-semiconductor-metal photodetectors", IEEE Photon. Technol. Lett., Vol. 14, No. 2, pp , February S. J. Chang, Y. K. Su, W. R. Chen, J. F. Chen, M. H. Chen, F. S. Juang, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu and U. H. Liaw, "ZnMgSSe metal-semiconductor-metal visible-blind photodetectors with transparent indium-tin-oxide contact electrodes", Jpn. J. Appl. Phys. Lett., Vol. 41, No. 2A, pp. L115-L117, February S. J. Chang, J. S. Lee, M. C. Wei, J. F. Chen, C. H. Liu and U. H. Liaw, "Effects of photo-assisted O2 annealing on the properties of (Ba,Sr)TiO3 thin films", J. Vac. Sci. Technol., Vol. 20, No. 1, pp , January S. J. Chang, W. R. Chen, Y. K. Su, J. F. Chen, W. H. Lan, C. I. Chiang, W. J. Lin, Y. T. Cherng and C. H. Liu, "Au/AuBe/Cr contact to p-znte", Electron. Lett., Vol. 37, No. 5, pp , March 2001.

7 1.P. C. Chang*, C. L. Yu, K. H. Lee, S. J. Chang, K. J. Lee, C. H. Liu, Improved Performance of GaN-based Schottky barrier Photodetectors by annealing Ir/Pt Schottky contact in O2, International Conference on Materials for Advenced Technologies, Singapore, July P. C. Chang*, Y. C. Wang, K. H. Lee, C. L. Yu, S. J. Chang, C. H. Liu, K. J. Lee, Reduction of Dark Current in GaN-based Photodetectors with a un-activated Mg-doped GaN cap layer, International Conference on Materials for Advenced Technologies, Singapore, July 2007 研討會 論文 3.P. C. Chang*, C. L. Yu, C. H. Liu, S. J. Chang, Y. K. Su, R. W. Chuang, Y. J. Chiu, Ir/Pt Schottky Contact Oxidation for Nitride-based Schottky Barrier Diodes, Vancouver Canada, International Symposium on Compound Semiconductors, August P.C.Chang, C.H.Liu, S.J.Chang, Y.K.Su, C.H.Chen, C.L.Yu and Y.W.Zhan, The Characteristics of InGaN-base MSM Photodectors by Using the Recessed Contract Electrodes, 2005 Electron Device and Materials Symposia. 5.P.C.Chang, C.H.Liu, Y.K.Su, S.J.Chang, C.L.Yu, C.H.Chen, Y.W.Zhan, Growth Temperature Effect on the Optical and Material Quality of InGaN Epilayers Grown by MOCVD, 2005 薄膜與奈米科技研討會. 6.P.C.Chang, C.H.Chen, S.J.Chang, Y.K.Su, C.H.Liu, Y.D.Jhou and C.L.Yu The effect og GaN based semitransparent electrodes MSM photodetectors annealed in oxygen by photo-cvd, Electron Device and Materials Symposia, Keelung, pp , 研究 計畫 證照