Professional Experience Graduate Program Director, Dept. of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA

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1 Ümit Özgür, PhD Qimonda Associate Professor, Department of Electrical and Computer Engineering Virginia Commonwealth University 601 West Main Street Richmond, VA Phone (804) Fax (804) Web: Education Feb Dec Feb Jul Feb Feb Ph.D. in Physics, Duke University, Durham, NC Thesis: Ultrafast Spectroscopy of Group III-Nitride Semiconductor Heterostructures Advisor: Prof. Henry O. Everitt M.A. in Physics, Duke University, Durham, NC Advisor: Prof. Henry O. Everitt M.S. candidate in Electrical and Electronics Engineering Boğaziçi University, Istanbul, Turkey Advisor: Prof. Yorgo İstefanopulos B.S. in Electrical and Electronics Engineering honors, Boğaziçi University, Istanbul, Turkey B.S. in Physics honors (double major program), Boğaziçi University, Istanbul, Turkey Professional Experience July 2016 present July 2013 present July 2012 May 2013 June 2008 present Aug May 2008 June 2003 May 2008 Sep May 2003 Dec Aug Graduate Program Director, Dept. of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA Qimonda Associate Professor, Dept. of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA Qimonda Assistant Professor, Dept. of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA Assistant Professor, Dept. of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA Instructor, Dept. of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA Post-Doctoral Research Associate, Dept. of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA Teaching and Research Assistant, Physics Dept., Duke University, Durham, NC Project Engineer, ROTA Electronics Ltd., Istanbul, Turkey Awards, fellowships, honors IEEE Senior Membership, 2015 Faculty Excellence Award for excellence in teaching as voted on by the student body, Virginia Commonwealth University, 2014 Qimonda Endowed Professorship, Virginia Commonwealth University, 2012 Parent s Award for Excellence in Undergraduate Teaching, Virginia Commonwealth University, December 2012 Fritz London Fellowship, Duke University, 2001 Walter Gordy Fellowship, Duke University, 2000 Listed in Who is Who in Science and Engineering, 2006 Publications 1 Book, 4 Book Chapters, over 120 Journal Publications, over 100 Conference Proceedings and Presentations. Comprehensive review papers on ZnO materials and devices, microwave ferrites, and LEDs. 1

2 Books 1. H. Morkoç and Ü. Özgür, Zinc Oxide: Fundamentals, materials and device technology, WILEY, ISBN: Book Chapters 1. Ü. Özgür, V. Avrutin, and H. Morkoç, ZnO Materials and Devices grown by MBE, in Molecular Beam Epitaxy: From Research to Mass Production edited by M. Henini, Elsevier, R. Shimada, Ü. Özgür, and H. Morkoç, Polariton devices based on wide-bandgap semiconductor microcavities, in Nanoscale Photonics and Optoelectronics, Springer Series: Lecture Notes in Nanoscale Science and Technology, Volume 9 edited by Z. M. Wang and A. Neogi, Springer, J. Xie, Y. Fu, Ü. Özgür, and H. Morkoç, GaN lateral epitaxial growth using porous SiN x, TiN x and SiC, in Porous SiC and GaN: Epitaxy, Catalysis, and Biotechnology Applications edited by R. M. Feenstra and C. E. C. Wood, Wiley, Ü. Özgür and H. Morkoç, Optical Properties of ZnO and related alloys, in Zinc Oxide Bulk, Thin Films and Nanostructures edited by C. Jagadish and S. J. Pearton, Elsevier, Refereed Journal Articles 1. M. B. Ullah, V. Avrutin, S. Li, S. Das, M. Monavarian, M. Toporkov, Ü. Özgür, P. Ruterana, and H. Morkoç, Polarity Control and Residual Strain in ZnO Epilayers Grown by Molecular Beam Epitaxy on (0001)-GaN/Sapphire, Phys. Stat. Sol. RRL. 10, 682 (2016). (cover page) 2. R. J. Alan Esteves, S. Hafiz, D. Demchenko, Ü. Özgür, and I. U. Arachchige, Ultra-Small Ge 1-xSn x quantum dots with visible photoluminescence, Chem. Com. 52, (2016). 3. D. O. Demchenko, N. Izyumskaya, M. Feneberg, R. Goldhahn, V. Avrutin, Ü. Özgür, and H. Morkoç, Optical properties of organic-inorganic hybrid perovskite CH 3NH 3PbI 3: theory and experiment, Phys. Rev. B 94, (2016). 4. S. Hafiz, R. J. Alan Esteves, D. Demchenko, I. U. Arachchige, and Ü. Özgür, Energy Gap Tuning and Carrier Dynamics in Colloidal Ge 1-xSn x Quantum Dots, The Journal of Physical Chemistry Letters 7, 3295 (2016). 5. M. Monavarian, N. Izyumskaya, M. Müller, S. Metzner, P. Veit, N. Can, S. Das, Ü. Özgür, F. Bertram, J. Christen, H. Morkoç, and V. Avrutin, Improvement of optical quality of semipolar (11-22) GaN on m-plane sapphire by in situ epitaxial lateral overgrowth, J. Appl. Phys. 119, (2016) 6. M. Toporkov, D. Demchenko, Z. Zolnai, J. Volk, V. Avrutin, H. Morkoç, and Ü. Özgür, Lattice Parameters and Electronic Structure of BeMgZnO Quaternary Solid Solutions: Experiment and Theory, J. Appl. Phys. 119, (2016). 7. L. Nahar, R. J. Alan Esteves, S. Hafiz, Ü. Özgür, and I. U. Arachchige, Metal-Semiconductor Hybrid Aerogels: Evolution of Optoelectronic Properties in a Low-Dimensional CdSe/Ag Nanoparticle Assembly, ACS Nano 9, 9810 (2015). 8. L. Ardaravičius, O. Kiprijanovič, J. Liberis, E. Šermukšnis, A. Matulionis, R. Ferreyra, V. Avrutin, Ü. Özgür, and H. Morkoç, Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels, Semicond. Sci. Technol. 30, (2015). 9. F. Zhang, N. Can, S. Hafiz, M. Monavarian, S. Das, V. Avrutin, Ü. Özgür, and H. Morkoç, Improvement of carrier injection symmetry and quantum efficiency in InGaN LEDs with Mg delta doped barriers, Appl. Phys. Lett. 106, (2015). 10. E. Korhonen, V. Prozheeva, F. Tuomisto, O. Bierwagen, J. Speck, M. White, Z. Galazka, H. Liu, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, Cation vacancies and electrical compensation in Sb-doped thin-film SnO 2 and ZnO, Semicond. Sci. Technol. 30, (2015). 11. E. Šermukšnis, J. Liberis, M. Ramonas, A. Matulionis, M. Toporkov, H. Y. Liu, V. Avrutin, Ü. Özgür, and H. Morkoç, Hot-electron energy relaxation time in Ga-doped ZnO films J. Appl. Phys. 117, (2015). 12. Z. Zolnai, M. Toporkov, J. Volk, D. O. Demchenko, S. Okur, Z. Szabo, Ü. Özgür, H. Morkoç, V. Avrutin, and E. Kotai, Accurate nondestructive compositional analysis of BeMgZnO quaternary alloys using ion beam analytical techniques, Appl. Surf. Sci. 327, 43 (2015). 13. E. Šermukšnis, J. Liberis, A. Matulionis, V. Avrutin, R. Ferreyra, Ü. Özgür, and H. Morkoç, Hot-electron real-space transfer and longitudinal transport in AlGaN/AlN/{AlGaN/GaN} channels, Semicond. Sci. Technol. 30, (2015). 14. S. Hafiz, F. Zhang, M. Monavarian, V. Avrutin, H. Morkoç, Ü. Özgür, S. Metzner, F. Bertram, J. Christen, and B. Gil, Determination of carrier diffusion length in GaN, J. Appl. Phys. 117, (2015). 2

3 15. N. Izyumskaya, D. Demchenko, V. Avrutin, Ü. Özgür, and H. Morkoç, Two-dimensional MoS 2 as a new material for electronic devices, Turk. J. Phys. 38, 478 (2014). 16. V. Avrutin, S. A. Hafiz, F. Zhang, Ü. Özgür, E. Bellotti, F. Bertazzi, M. Goano, A. Matulionis, A. T. Roberts, H. O. Everitt, and H. Morkoç, Saga of efficiency degradation at high injection in InGaN light emitting diodes, Turk. J. Phys. 38, 269 (2014). 17. D. Rosales, B. Gil, T. Bretagnon, B. Guizal, N. Izyumskaya, M. Monavarian, F. Zhang, S. Okur, V. Avrutin, Ü. Özgür, and H. Morkoç, Recombination dynamics of excitons with low nonradiative component in semipolar (10-11)-oriented GaN/AlGaN quantum wells, J. Appl. Phys. 116, (2014). 18. M. Toporkov, V. Avrutin, S. Okur, N. Izyumskaya, D. Demchenko, J. Volk, D. J. Smith, H. Morkoç, and Ü. Özgür, Enhancement of Be and Mg incorporation in wurtzite quaternary BeMgZnO alloys with up to 5.1 ev optical bandgap, Journal of Crystal Growth 402, 60 (2014). 19. D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells, J. Appl. Phys. 115, (2014). 20. Andrew B. Yankovich, Alexander V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, Ü. Özgür, Brandon Van Leer, H. Morkoç, and Paul M. Voyles, Thickness variations and absence of lateral compositional fluctuations in aberration-corrected STEM images of InGaN LED active regions at low dose, Journal of Microscopy and Microanalysis 20, 864 (2013). 21. S. Okur, S. Metzner, N. Izyumskaya, F. Zhang, V. Avrutin, C. Karbaum, F. Bertram, J. Christen, H. Morkoç, and Ü. Özgür, Distribution of extended defects and blockage of threading dislocations by stacking faults in semipolar (1-101) GaN revealed from spatially resolved luminescence, Applied Physics Letters 103, (2013). 22. N. Killat, M. Montes Bajo, T. Paskova, K. R. Evans, J. Leach, X. Li, Ü. Özgür, H. Morkoç, K. D. Chabak, A. Crespo, J. K. Gillespie, R. Fitch, M. Kossler, D. E. Walker, M. Trejo, G. D. Via, J. D. Blevins, and M. Kuball, Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges, Applied Physics Letters 103, (2013). 23. N. Izyumskaya, F. Zhang, S. Okur, T. Selden, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, and H. Morkoç, Optical properties of semipolar (1-101) GaN on patterned Si substrates, Journal of Applied Physics 114, (2013). 24. C. Y. Zhu, F. Zhang, R. A. Ferreyra, V. Avrutin, Ü. Özgür, and H. Morkoç, Degradation in AlGaN/GaN heterojunction field effect transistors upon electrical stress: effects of field and temperature, Applied Physics Letters 103, (2013). 25. F. Zhang, X. Li, S. Hafiz, S. Okur, V. Avrutin, Ü. Özgür, and H. Morkoç, The effect of staircase electron injector design on electron overflow in InGaN LEDs, Applied Physics Letters 103, (2013). 26. L. Dong, J. V. Mantese, V. Avrutin, Ü. Özgür, H. Morkoç, and S. P. Alpay, Strain induced variations in band offsets and built-in electric fields in InGaN/GaN multiple quantum wells, J. Appl. Phys. 114, (2013). 27. V. Avrutin, S. A. Hafiz, F. Zhang, Ü. Özgür, H. Morkoç, and A. Matulionis, InGaN LEDs: Efficiency-limiting processes at high injection, J. Vac. Sci. Technol. A 31, (2013). 28. H. Liu, V. Avrutin, C. Y. Zhu, Ü. Özgür, J. Yang, C. Z. Liu, and H. Morkoç, Enhanced microwave dielectric tunability of Ba 0.5Sr 0.5TiO 3 thin films grown with reduced strain on DyScO3 substrates by three-step technique, Journal of Applied Physics 113, (2013). 29. K. Jarašiūnas, S. Nargelas, R. Aleksiejūnas, S. Miasojedovas, M. Vengris, S. Okur, H. Morkoç, Ü. Özgür, C. Giesen, Ö. Tuna, and M. Heuken, Spectral distribution of excitation-dependent recombination rate in an In 0.13Ga 0.87N epilayer, Journal of Applied Physics 113, (2013). 30. A.V. Kvit, A.B. Yankovich, V. Avrutin, H. Liu, N. Izyumskaya, Ü. Özgür, H. Morkoç, and P.M. Voyles, Impurity Distribution and Microstructure of Ga-doped ZnO films grown by molecular beam epitaxy, Journal of Applied Physics 112, (2012). 31. L. Ardaravičius, O. Kiprijanovič, J. Liberis, A. Matulionis, X. Li, F. Zhang, M. Wu, V. Avrutin, Ü. Özgür, and H. Morkoç, Hot-electron drift velocity in AlGaN/AlN/AlGaN/GaN camelback channel, Semicond. Sci. Technol. 27, (2012). 32. C. Y. Zhu, M. Wu, C. Kayis, F. Zhang, X. Li, R. Ferreyra, A. Matulionis, V. Avrutin, Ü. Özgür, and H. Morkoç, Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects, Applied Physics Letters 101, (2012). 33. M. Ťapajna, N. Killat, J. Moereke, T. Paskova, K. R. Evans, J. Leach, X. Li, Ü. Özgür, H. Morkoç, K. D. Chabak, A. Crespo, J. K. Gillespie, R. Fitch, M. Kossler, D.E. Walker, M. Trejo, G. D. Via, J. D. Blevins, and M. Kuball, Non- Arrhenius Degradation of AlGaN/GaN HEMTs Grown on Bulk GaN Substrates, IEEE Electron Device Letters 33, 1126 (2012). 3

4 34. H. Y. Liu, N. Izyumskaya, V. Avrutin, Ü. Özgür, A. B. Yankovich, A. V. Kvit, P. M. Voyles, and H. Morkoç, Donor behavior of Sb in ZnO, Journal of Applied Physics 112, (2012). 35. X. Li, S. Okur, F. Zhang, S. A. Hafiz, V. Avrutin, Ü. Özgür, H. Morkoç, and K. Jarašiūnas Improved quantum efficiency in InGaN light emitting diodes with multi-double heterostructure active regions, Applied Physics Letters 101, (2012). 36. H. Y. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, A. B. Yankovich, A. V. Kvit, P. M. Voyles, and H. Morkoç, Electron scattering mechanisms in GZO films grown on a-sapphire substrates by plasma enhanced molecular beam epitaxy, Journal of Applied Physics 111, (2012). 37. C. Y. Zhu, H. Liu, V. Avrutin, Ü. Özgür, and H. Morkoç, BaSrTiO 3 / YIG microwave Phase Shifter with large twodegree of freedom tuning, Electronics Letters 48, 508 (2012). 38. X. Li, S. Okur, F. Zhang, V. Avrutin, Ü. Özgür, H. Morkoç, S. M. Hong, S. H. Yen, T. S. Hsu, and A. Matulionis, Impact of active layer design on InGaN radiative recombination coefficient and LED performance, Journal of Applied Physics 111, (2012). 39. C. Kayis, R. A. Ferreyra, C. Y. Zhu, V. Avrutin, Ü. Özgür, H. Morkoç, The effect of barrier strain on reliability of In xal 1-xN/AlN/GaN heterostructure field-effect transistors, Physica Status Solidi - Rapid Research Letters 6, 163 (2012). 40. N. Killat, M. Montes, J. Pomeroy, T. Paskova, K. Evans, J. Leach, X. Li, Ü. Özgür, H. Morkoç, K. D. Chabak, A. Crespo, J. K. Gillespie, R. Fitch, M. Kossler, D. Walker, M. Trejo, G. D. Via, J. D. Blevins, and M. Kuball, Thermal properties of AlGaN/GaN Heterostructure Field Effect Transistors on Bulk GaN substrates, IEEE. Electron Device Letters 33, 366 (2012). 41. L. Tarnawska, P. Zaumseil, M. A. Schubert, S. Okur, Ü. Özgür, H. Morkoç, R. Paszkiewicz, P. Storck, and T. Schroeder, Structural and optical quality of GaN grown on Sc 2O 3/Y 2O 3/Si(111), Journal of Applied Physics 111, (2012). 42. P. Ščajev, K. Jarašiūnas, Ü. Özgür, H. Morkoç, J. Leach, and T. Paskova, Anistropy of free-carrier absorption and diffusivity in m-plane GaN, Applied Physics Letters 100, (2012). 43. P. Ščajev, K. Jarašiūnas, S. Okur, Ü. Özgür, and H. Morkoç, Carrier dynamics in bulk GaN, Journal of Applied Physics 111, (2012). 44. A. B. Yankovich, A. V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, Ü. Özgür, H. Morkoç, and P. M. Voyles, Hexagonal-based pyramid voids defects in GaN and InGaN, Journal of Applied Physics 111, (2012). 45. X. Li, F. Zhang, S. Okur, V. Avrutin, S. J. Liu, Ü. Özgür, H. Morkoç, S. M. Hong, S. H. Yen, T. C. Hsu, and A. Matulionis, On the Quantum Efficiency of InGaN Light Emitting Diodes: Effects of Active Layer Design, Electron Cooler, and Electron Blocking Layer, Physica Status Solidi A 208, 2907 (2011). 46. C. Y. Zhu, C. Kayis, M. Wu, X. Li, F. Zhang, V. Avrutin, Ü. Özgür, and H. Morkoç, Reduction of Flicker Noise in AlGaN/GaN-based HFETs after High Electric Field Stress, IEEE Electron Device Letters 32, 1513 (2011). 47. D. O. Demchenko, B. Earles, H. Y. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, and H. Morkoç, Impurity complexes and conductivity of Ga doped ZnO, Physical Review B 84, (2011). 48. C. Kayis, R. A. Ferreyra, M. Wu, X. Li, Ü. Özgür, and H. Morkoç, Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects, Applied Physics Letters 99, (2011). 49. C. Kayis, C. Y. Zhu, M. Wu, Ü. Özgür, and H. Morkoç, Field-assisted emission in AlGaN/GaN heterostructure fieldeffect transistors using low-frequency noise technique, Journal of Applied Physics 109, (2011). 50. N. Izyumskaya, S. J. Liu, V. Avrutin, X. F. Ni, M. Wu, Ü. Özgür, S. Metzner, F. Bertram, J. Christen, L. Zhou, D. J. Smith, and H. Morkoç, Epitaxial lateral overgrowth of nonpolar (1-101) GaN on Si(112) patterned substrates by MOCVD, Journal of Crystal Growth 314, 129 (2011). 51. Ü. Özgür, X. Ni, X. Li, J. Lee, S. Liu, S. Okur, V. Avrutin, A. Matulionis, and H. Morkoç, Ballistic transport in InGaN based LEDs: impact on efficiency, Topical issue in honor of the Nobel Laureate Zh. I. Alferov, Ed. Dieter Bimberg, Semiconductor Science and Technology 26, (2011). 52. H. Y. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, and H. Morkoç, Transparent conducting oxides for electrode applications in light emitting and absorbing devices, Superlattices and Microstructures 48, 458 (2010). 53. M. Wu, J. H. Leach, X. Ni, X. Li, J. Xie, S. Doğan, Ü. Özgür, H. Morkoç, T. Paskova, E. Preble, K. R. Evans, and C.- Z. Lu, InAlN/GaN heterostructure field-effect transistors on Fe-doped semiinsulating GaN substrates, Journal of Vacuum Science and Technology B 28, 908 (2010). 54. J. H. Leach, H. Liu, V. Avrutin, E. Rowe, Ü. Özgür, H. Morkoç, Y. Y. Song, and M. Wu, Electrically and Magnetically tunable phase shifters based on BST-YIG layered structure, Journal of Applied Physics 108, (2010). 4

5 55. X. Li, H. Y. Liu, S. Liu, X. Ni, M. Wu, V. Avrutin, N. Izyumskaya, Ü. Özgür, and H. Morkoç, InGaN-based light emitting diodes with Ga-doped ZnO as transparent conducting oxide, Physica Status Solidi A 207, 1993 (2010). 56. S. Gökden, R. Tülek, A. Teke, J. H. Leach, Q. Fan, J. Xie, Ü. Özgür, H. Morkoç, S. B. Lisesivdin, and E. Özbay, Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel, Semiconductor Science and Technology 25, , (2010). 57. X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, T. Paskova, G. Mulholland, and K. R. Evans, InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes, Applied Physics Letters 97, (2010). 58. C. Kayis, J. H. Leach, C. Y. Zhu, M. Wu, X. Li, Ü. Özgür, H. Morkoç, X. Yang, V. Misra, and P. H. Handel, Lowfrequency noise measurements of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfAlO gate dielectric, IEEE Electron Device Letters 31, 1041 (2010). 59. X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, and A. Matulionis, Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate them, Journal of Applied Physics 108, (2010). 60. X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, A. Matulionis, Ü. Özgür, and H. Morkoç, Pivotal role of ballistic and quasiballistic electrons on LED efficiency, Superlattices and Microstructures 48, 133 (2010). 61. V. Avrutin, N. Izyumskaya, Ü. Özgür, D. Silversmith, and H. Morkoç, Ferromagnetism in ZnO- and GaN-based diluted magnetic semiconductors: Achievements and Challenges, Proceedings of the IEEE 98, 1288 (2010). 62. Ü. Özgür, H. Liu, X. Li, X. Ni, and H. Morkoç, GaN-based Light-Emitting Diodes: Efficiency at High Injection Levels, Proceedings of the IEEE 98, 1180 (2010). 63. Ü. Özgür, D. Hofstetter, and H. Morkoç, ZnO Devices and Applications: A review of current status and future prospects, Proceedings of the IEEE 98, 1255 (2010). 64. X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, T. Paskova, G. Mulholland, and K. R. Evans, The effect of ballistic and quasi-ballistic electrons on the efficiency droop of InGaN light emitting diodes, Physica Status Solidi Rapid Research Letters 4, 194 (2010). 65. J. H. Leach, X. Ni, X. Li, M. Wu, Ü. Özgür, H. Morkoç, L. Zhou, D. Cullen, D. J. Smith, H. Cheng, Ç. Kurdak, J. Meyer, and I. Vurgaftman, Bias dependent two-channel conduction in InAlN/AlN/GaN structures, Journal of Applied Physics 107, (2010). 66. H. Y. Liu, V. Avrutin, N. Izyumskaya, M. A. Reshchikov, Ü. Özgür, and H. Morkoç, Highly conductive and optically transparent GZO films grown under metal-rich conditions by plasma-assisted molecular beam epitaxy, Physica Status Solidi Rapid Research Letters 4, 70 (2010). 67. J. H. Leach, C. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, T. Paskova, E. Preble, and K. R. Evans, Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN HFETs on bulk GaN substrates, Applied Physics Letters 96, (2010). 68. H. Y. Liu, V. Avrutin, B. Xiao, E. Rowe, H. R. Liu, Ü. Özgür, and H. Morkoç, Epitaxial relationship of MBE grown barium hexaferrite (0001) films on sapphire (0001), Journal of Crystal Growth 312, 671 (2010). 69. J. H. Leach, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morkoç, T. Paskova, E. Preble, K. R. Evans, and C.-Z. Lu, Carrier Velocity in InAlN/AlN/GaN HFETs on Fe-Doped Bulk GaN substrates, Applied Physics Letters 96, (2010). 70. J. H. Leach, H. Liu, V. Avrutin, B. Xiao, Ü. Özgür, H. Morkoç, J. Das, Y. Y. Song, and C. E. Patton, Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba 0.5Sr 0.5TiO 3 on SrTiO 3, Journal of Applied Physics 107, (2010). 71. J. H. Leach, M. Wu. X. Ni, X. Li, Ü. Özgür, and H. Morkoç, Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures, Physica Status Solidi A 207, 211 (2010). 72. J. H. Leach, C. Zhu, M. Wu, X. Ni, X. Li, J. Xie, Ü. Özgür, H. Morkoç, J. Liberis, E. Šermukšnis, A. Matulionis, H. Cheng, and Ç. Kurdak, Degradation in GaN-based HFETs: Role of hot phonons, Applied Physics Letters 95, (2009). 73. B. Xiao, Hongrui Liu, V. Avrutin, J. H. Leach, E. Rowe, Huiyong Liu, Ü. Özgür, Hadis Morkoç, W. Chang, L. M. B. Alldredge, S. W. Kirchoefer, and J. M. Pond, Epitaxial growth of (001)-oriented Ba 0.5Sr 0.5TiO 3 thin films on a-plane sapphire with an MgO/ZnO bridge layer, Applied Physics Letters 95, (2009). 74. J. Lee, X. Li, X. Ni, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland, and K. R. Evans, On carrier spillover in c- and m-plane InGaN light emitting diodes, Applied Physics Letters 95, (2009). 75. X. Li, X. Ni, J. Lee, M. Wu, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland, and K. R. Evans, Efficiency retention at high injection levels in InGaN LEDs on m-plane GaN, Applied Physics Letters 95, (2009). 5

6 76. X. Ni, M. Wu, J. Lee, X. Li, A. A. Baski, Ü. Özgür, and H. Morkoç, Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition, Applied Physics Letters 95, (2009). 77. X. Ni, J. Lee, M. Wu, X. Li, R. Shimada, Ü. Özgür, A. A. Baski, H. Morkoç, T. Paskova, G. Mulholland, and K.R. Evans, Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si and GaN, Applied Physics Letters 95, (2009). Top 20 Most downloaded in September B. Xiao, V. Avrutin, H. Liu, E. Rowe, J. Leach, X. Gu, Ü. Özgür, and Hadis Morkoç, Effect of large strain on dielectric and ferroelectric properties of Ba 0.5Sr 0.5TiO 3 thin films, Applied Physics Letters 95, (2009). 79. L. Zhou, X. Ni, Ü. Özgür, H. Morkoç, and D. J. Smith, High resolution imaging of 1:1 [0001] ordered a-plane Al 0.3Ga 0.7N, Journal of Crystal Growth 311, 4162 (2009). 80. A. Teke, S. Gökden, R. Tülek, J. H. Leach, Q. Fan, J. Xie, Ü. Özgür, H. Morkoç, S. B. Lisesivdin, and E. Özbay, The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures, New Journal of Physics 11, (2009). 81. Ü. Özgür, Ya. I. Alivov, and H. Morkoç, Microwave ferrites, Part 1: Fundamental Properties, Journal of Materials Science: Materials in Electronics 20, 789 (2009). 82. Ü. Özgür, Ya. I. Alivov, and H. Morkoç, Microwave ferrites, Part 2: Passive Components and Electrical Tuning, Journal of Materials Science: Materials in Electronics 20, 911 (2009). 83. L. Zhou, D. J. Smith, X. Ni, Ü. Özgür, H. Morkoç, R. P. Devaty, and W. J. Choyke, Atomic structure of the m-plane AlN/SiC interface, Journal of Crystal Growth 311, 1456 (2009). 84. V. Avrutin, H. Y. Liu, N. Izyumskaya, B. Xiao, Ü. Özgür, and H. Morkoç, Growth of Pb(TiZr)O 3 thin films by metalorganic molecular beam epitaxy, Journal of Crystal Growth 311, 1333 (2009). 85. X. Ni, R. Shimada, T. D. Kang, J. Leach, Ü. Özgür, and H. Morkoç, GaN-based vertical cavities with crack-free high reflectivity patterned AlGaN/GaN distributed Bragg reflectors, Physica Status Solidi A 206, 367 (2009). 86. X. Ni, Q. Fan, R. Shimada, Ü. Özgür, and H. Morkoç, Reduction of efficiency droop in InGaN light-emitting-diodes by coupled quantum wells, Applied Physics Letters 93, (2008). Featured in Semiconductor Today online. 87. T. D. Kang, B. Xiao, V. Avrutin, Ü. Özgür, H. Morkoç, J. W. Park, H. S. Lee, H. Lee, X. Wang, and D. J. Smith, Large electrooptic effect in single crystal Pb(Zr,Ti)O 3 (001) measured by spectroscopic ellipsometry, Journal of Applied Physics 104, (2008). 88. J. Xie, X. Ni, Q. Fan, R. Shimada, Ü. Özgür, and H. Morkoç, On the efficiency droop in InGaN MQW blue LEDs and its reduction with p-doped quantum well barriers, Applied Physics Letters 93, (2008). Featured in Compound Semiconductor Online, Semiconductor Today online. 89. B. Xiao, V. Avrutin, H. Liu, Ü. Özgür, H. Morkoç, and C. Lu, Large pyroelectric effect in undoped epitaxial PZT thin films on STO substrates, Applied Physics Letters 93, (2008). 90. R. Shimada, J. Xie, V. Avrutin, Ü. Özgür, and H. Morkoç, Cavity polaritons in ZnO-based hybrid microcavities, Applied Physics Letters 92, (2008). 91. J. Xie, J. H. Leach, X. Ni, M. Wu, R. Shimada, Ü. Özgür, and H. Morkoç, Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers, Applied Physics Letters 91, (2007). 92. J. Leach, Ü. Özgür, and H. Morkoç, Evolution of surface morphology of GaN thin films during photoelectrochemical etching, Journal of Vacuum Science and Technology B 25, 1832 (2007). 93. X. F. Ni, Ü. Özgür, H. Morkoç, V. Kasliwal, J. C. Moore, A. A. Baski, Z. Liliental-Weber, and H. O. Everitt, Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition, Journal of Applied Physics 102, (2007). 94. J. Xie, X. Ni, M. Wu, J. H. Leach, Ü. Özgür, and H. Morkoç, High electron mobility in nearly lattice-matched AlInN/AlN/GaN heterostructure field effect transistors, Applied Physics Letters 91, (2007). 95. J. Xie, S. Chevtchenko, Ü. Özgür, and H. Morkoç, Defect reduction in GaN epilayers grown by metalorganic chemical vapor deposition with in situ SiN x nanonetwork, Applied Physics Letters 90, (2007). 96. X. F. Ni, Ü. Özgür, A. A. Baski, H. Morkoç, L. Zhou, D. J. Smith, and C. A. Tran, Epitaxial lateral overgrowth of (11-22) semi-polar GaN on (1-100)m-plane sapphire by metalorganic chemical vapor deposition, Applied Physics Letters 90, (2007). 97. J. C. Moore, V. Kasliwal, A. A. Baski, X. Ni, Ü. Özgür, and H. Morkoç, Local electronic and optical behavior of a- plane GaN grown via epitaxial lateral overgrowth, Applied Physics Letters 90, (2007). 98. J. Xie, Ü. Özgür, Y. Fu. X. Ni, H. Morkoç, C. K. Inoki, T. S. Kuan, J. V. Foreman, and H. O. Everitt, Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiN x nano-network, Applied Physics Letters 90, (2007). 6

7 99. Ü. Özgür, X. F. Ni, Y. Fu, H. Morkoç, and H. O. Everitt, Near field scanning optical microscopy and time-resolved optical characterization of epitaxial lateral overgrown c-plane and a-plane GaN, Applied Physics Letters 89, (2006) X. F. Ni, Ü. Özgür, Y. Fu, N. Biyikli, J. Xie, A. A. Baski, H. Morkoç, and Z. Liliental-Weber, Defect reduction in a-plane GaN by two-stage epitaxial lateral overgrowth, Applied Physics Letters 89, (2006). (1120) 101. Ç. Kurdak, N. Biyikli, Ü. Özgür, H. Morkoç, and V. Litvinov, Weak antilocalization and zero-field electron spin splitting in Al xga 1-xN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas, Physical Review B 74, (2006) N. Biyikli, Ü. Özgür, X. F. Ni, Y. Fu, H. Morkoç, and Ç. Kurdak, Illumination and annealing characteristics of twodimensional electron gas systems in metal-organic vapor-phase epitaxy grown Al xga 1 xn/aln/gan heterostructures, Journal of Applied Physics 100, (2006) S. Chevtchenko, J. C. Moore, Ü. Özgür, X. Gu, A. A. Baski, H. Morkoç, B. Nemeth, and J. E. Nause, Comparative study of surface properties of Zn- and O-face bulk ZnO, Applied Physics Letters 89, (2006) G. S. Lee, H. S. Lee, T. D. Kang, H. Lee, C. Liu, B. Xiao, Ü. Özgür, and H. Morkoç, Spectroscopic Ellipsometry and Absorption Study of Zn 1-xMn xo/al 2O 3 (0 x 0.08) Thin Films, Journal of Applied Physics 99, (2006) Y. Fu, F. Yun, Y. T. Moon, Ü. Özgür, J. Q. Xie, X. F. Ni, N. Biyikli, H. Morkoç, L. Zhou, D. J. Smith, C. K. Inoki, and T. S. Kuan, Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy, Journal of Applied Physics 99, (2006) F. Yun, Y. T. Moon, Y. Fu, K. Zhu, Ü. Özgür, H. Morkoç, C. K. Inoki, T. S. Kuan, A. Sagar, R. M. Feenstra, Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vaporphase epitaxy, Journal of Applied Physics 98, (2005) Ya. I. Alivov, D. Johnstone, Ü. Özgür, V. Avrutin, Q. Fan, S. Akarca-Biyikli, and H Morkoç, Electrical and Optical Properties of n-zno/p-sic heterojunctions, Japanese Journal of Applied Physics - Part 1 44, 7281 (2005) Ya. I. Alivov, Ü. Özgür, S. Doğan, C. Liu, Y. T. Moon, X. Gu, V. Avrutin, Y. Fu, and H Morkoç, Forward-current electroluminescence from n-gan/n-zno/p-gan double heterostructure diodes, Solid State Electronics 49, 1693 (2005) Ya. I. Alivov, Ü. Özgür, S. Doğan, D. Johnstone, V. Avrutin, N. Onojima, C. Liu, J. Xie, Q. Fan, and H. Morkoç, Photoresponse of n-zno/p-sic heterojunction diodes grown by plasma-assisted molecular-beam epitaxy, Applied Physics Letters 86, (2005) Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. Reshchikov, S. Doğan, V. Avrutin, S. J. Cho, and H. Morkoç, A comprehensive review of ZnO materials and devices, Journal of Applied Physics 98, (2005). The highest number of citations in the history of the journal, top three most cited articles in the field of Applied Physics K. T. Tsen, W. Liang, D. K. Ferry, H. Lu, W. J. Schaff, Ü. Özgür, Y. Fu, Y. T. Moon, H. Morkoç, and H. O. Everitt, Optical studies of carrier dynamics and non-equilibrium optical phonons in nitride-based wide bandgap semiconductors, Superlattices and Microstructures 38, 77 (2005) Ü. Özgür, Y. Fu, Y. T. Moon, F. Yun, H. Morkoç, and H. O. Everitt, Increased carrier lifetimes in GaN epitaxial films grown using SiN and TiN porous network layers, Journal of Applied Physics 97, (2005) Ü. Özgür, Y. Fu, Y. T. Moon, F. Yun, H. Morkoç, H. O. Everitt, S. S. Park, and K. Y. Lee, Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates, Applied Physics Letters 86, (2005) Yi Fu, Y. T. Moon, F. Yun, Ü. Özgür, J. Q. Xie, S. Doğan, H. Morkoç, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, Effectiveness of TiN Templates on the Reduction of Threading Dislocations in GaN Overgrowth by Organometallic Vapor-Phase Epitaxy, Applied Physics Letters 86, (2005) A. Teke, Ü. Özgür, S. Doğan, X. Gu, H. Morkoç, B. Nemeth, J. Nause, and H. O. Everitt, Excitonic fine structure and recombination dynamics in single crystalline ZnO, Physical Review B 70, (2004) Ü. Özgür, A. Teke, C. Liu, S. J. Cho, H. Morkoç, and H. O. Everitt, Stimulated Emission and Time-Resolved Photoluminescence in RF-Sputtered ZnO Thin Films, Applied Physics Letters 84, 3223 (2004) Ü. Özgür, H. O. Everitt, L. He, and H. Morkoç, "Stimulated Emission and Ultrafast Carrier Relaxation in AlGaN/GaN Multiple Quantum Wells", Applied Physics Letters 82, 4080 (2003) Ü. Özgür, H. O. Everitt, S. Keller, and S. P. DenBaars, "Stimulated Emission and Ultrafast Carrier Relaxation in InGaN Multiple Quantum Wells", Applied Physics Letters 82, 1416 (2003) Ü. Özgür and H. O. Everitt, "Ultrafast Carrier Relaxation in GaN, InGaN, and an In 0.07Ga 0.93N/In 0.12Ga 0.88N Multiple Quantum Well", Physical Review B 67, (2003) Ü. Özgür, G. Webb-Wood, H. O. Everitt, F. Yun, and H. Morkoç, "Systematic measurement of AlGaN Refractive Indices", Applied Physics Letters 79, 4103 (2001). 7

8 121. Ü. Özgür, C. -W. Lee, and H. O. Everitt, "Control of Coherent Phonons in InGaN Multiple Quantum Wells", Physical Review Letters 86, 5604 (2001) Ü. Özgür, M. J. Bergmann, H. C. Casey, Jr., H. O. Everitt, A. C. Abare, S. Keller, and S. P. DenBaars, "Ultrafast optical characterization of carrier capture times in InGaN multiple quantum wells", Applied Physics Letters 77, 109 (2000) C. W. Teng, J. F. Muth, Ü. Özgür, M. J. Bergmann, H. O. Everitt, A. K. Sharma, C. Jin, and J. Narayan, Refractive indices and absorption coefficients of Mg xzn 1-xO alloys, Applied Physics Letters 76, 979 (2000) M. J. Bergmann, Ü. Özgür, H. C. Casey, Jr., H. O. Everitt, and J. F. Muth, "Ordinary and extraordinary refractive indices for Al xga 1-xN epitaxial layers", Applied Physics Letters 75, 67 (1999) M. J. Bergmann, Ü. Özgür, H. C. Casey, Jr., J. F. Muth, Y. C. Chang, R. M. Kolbas, R. A. Rao, C. B. Eom, and M. Schurman, "Linear optical properties of a heavily Mg-doped Al 0.09Ga 0.91N epitaxial layer", Applied Physics Letters 74, 3188 (1999). Refereed Conference Proceedings 126. M. Monavarian, S. Hafiz, S. Das, N. Izyumskaya, Ü. Özgür, H. Morkoç, and V. Avrutin, Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices XI 9748, (2016) M. Monavarian, D. Rosales, B. Gil, N. Izyumskaya, S. Das, Ü. Özgür, H. Morkoç, and V. Avrutin, Exciton localization in (11-22)-oriented semipolar InGaN multiple quantum wells, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices XI 9748, (2016) M. Monavarian, S. Hafiz, N. Izyumskaya, S. Das, Ü. Özgür, H. Morkoç, and V. Avrutin, Wurtzite/zincblende electronic band alignment in basal stacking faults in semipolar GaN, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices XI 9748, (2016) S. Hafiz, N. Andrade, M. Monavarian, N. Izyumskaya, S. Das, F. Zhang, V. Avrutin, H. Morkoç, and Ü. Özgür, Optical investigation of microscopic defect distribution in semipolar (1-101) and (11-22) InGaN light-emitting diodes, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices XI 9748, (2016) M. Toporkov, Md B. Ullah, S. Hafiz, T. Nakagawara, V. Avrutin, H. Morkoç, and Ü. Özgür, Exciton localization and large Stokes shift in quaternary BeMgZnO grown by Molecular Beam Epitaxy, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices XI 9749, (2016) E. Šermukšnis, J. Liberis, A. Matulionis, M. Toporkov, V. Avrutin, Ü. Özgür, and Hadis Morkoç, Hot electron noise and energy relaxation in wurtzite ZnO, Proceedings of the 23rd International Conference on Noise and Fluctuations, ICNF2015, DOI: /ICNF , June 2-5, Xi an, China, (2015) N. Can, S. Okur, M. Monavarian, F. Zhang, V. Avrutin, H. Morkoç, A. Teke, and Ü. Özgür, Active region dimensionality and quantum efficiencies of InGaN LEDs from temperature dependent photoluminescence transients, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices X 9363, 93632U (2015) S. Hafiz, F. Zhang, M. Monavarian, V. Avrutin, H. Morkoç, and Ü. Özgür, Enhancement of coherent acoustic phonons in InGaN multiple quantum wells, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices X 9363, 93632J (2015) S. Okur, A. Franke, F. Zhang, V. Avrutin, H. Morkoç, F. Bertram, J. Christen, and Ü. Özgür, Strong exciton-photon coupling in hybrid InGaN-based microcavities on GaN substrates, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices X 9363, 93632O (2015) M. Monavarian, S. Metzner, N. Izyumskaya, S. Okur, F. Zhang, N. Can, S. Das, V. Avrutin, Ü. Özgür, F. Bertram, J. Christen, and H. Morkoç, Enhancement of optical and structural quality of semipolar (11-22)GaN by introducing nanoporous SiNx interlayers, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices X 9363, 93632I (2015) S. Okur, M. Monavarian, S. Das, N. Izyumskaya, F. Zhang, V. Avrutin, H. Morkoç, and Ü. Özgür, Strong carrier localization in stacking faults in semipolar (11-22)GaN, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices X 9363, 93632N (2015) M. Monavarian, S. Metzner, N. Izyumskaya, S. Okur, F. Zhang, N. Can, S. Das, V. Avrutin, Ü. Özgür, F. Bertram, J. Christen, and H. Morkoç, Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices X 9363, 93632P (2015). 8

9 138. D. Rosales, B. Gil, M. Monavarian, F. Zhang, S. Okur, N. Izyumskaya, V. Avrutin, Ü. Özgür, and H. Morkoç, Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semipolar AlGaN/GaN MQWs, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices X 9363, 93630J (2015) S. Hafiz, S. Metzner, F. Zhang, M. Monavarian, V. Avrutin, H. Morkoç, C. Karbaum, F. Bertram, J. Christen, B. Gil, and Ü. Özgür, Determination of carrier diffusion length in p- and n-gan, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices IX 8986, 89862C (2014) S. Hafiz, F. Zhang, M. Monavarian, S. Okur, V. Avrutin, H. Morkoç, and Ü. Özgür, Estimation of carrier leakage in InGaN light emitting diodes from photocurrent measurements, Proceedings of SPIE, The International Society of Optical Engineering, Light Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII 9003, 90031R (2014) N. Izyumskaya, S. Okur, F. Zhang, M. Monavarian, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, and H. Morkoç, Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices IX 8986, (2014) S. Okur, N. Izyumskaya, F. Zhang, V. Avrutin, S. Metzner, C. Karbaum, F. Bertram, J. Christen, H. Morkoç, and Ü. Özgür, Impact of extended defects on optical properties of (1-101)GaN grown on patterned Si, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices IX 8986, 89862B (2014) D. Rosales, B. Gil, T. Bertagnon, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices IX 8986, 89860L (2014) E. Šermukšnis, M. Ramonas, J. Liberis, A. Matulionis, V. Avrutin, H. Liu, N. Izyumskaya, Ü. Özgür, and Hadis Morkoç, Electron energy relaxation in wurtzite ZnO and GaN, ICNF2013, 22nd International Conference on Noise and Fluctuations, Montpellier, France, June 24-28, 2013, /ICNF A.B. Yankovich, A.V. Kvit, X. Li, F. Zhang, V. Avrutin, H. Y. Liu, N. Izyumskaya, Ü. Özgür, H. Morkoç, and P.M. Voyles, Absence of composition fluctuations in aberration-corrected STEM images of an InGaN quantum well at low dose, Materials Research Society (MRS) Symposium Proceedings 1432, 73 (2012), MRS Spring meeting, April 9-13, 2012, San Francisco, CA H. Liu, V. Avrutin, C. Zhu, J. H. Leach, E. Rowe, L. Zhou, D. Smith, Ü. Özgür, and H. Morkoç, Three-step deposition method for improvement of the dielectric properties of BST thin films, Materials Research Society (MRS) Symposium Proceedings 1397, (2012), MRS Fall meeting, November 28 December 2, 2011, Boston, MA S. Okur, R. Shimada, F. Zhang, S. Hafiz, J. Lee, V. Avrutin, H. Morkoç, A. Franke, F. Bertram, J. Christen, and Ü. Özgür, Weak and strong coupling regimes in GaN-based vertical cavities with semiconductor/dielectric and all dielectric reflectors, International Workshop on Nitride Semiconductors, Sapporo, Japan, 2012, Jpn. J. Appl. Phys. 52, 08JH03 (2013) C. Zhu, F. Zhang, R. A. Ferreyra, X. Li, C. Kayis, V. Avrutin, Ü. Özgür, and H. Morkoç, Investigation of microwave and noise properties of InAlN/GaN HFETs after electrical stress: Role of Surface Effects, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VIII 8625, 86252H (2013) N. Izyumskaya, S. Okur, F. Zhang, V. Avrutin, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, and H. Morkoç, Depth distribution of carrier lifetimes in semipolar (1-101)GaN grown by MOCVD on patterned Si substrates, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VIII 8225, 86252G (2013) F. Zhang, S. Okur, S. Hafiz, V. Avrutin, Ü. Özgür, and H. Morkoç, GaN-based vertical cavity lasers with semiconductor/dielectric and all dielectric reflectors, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VIII 8625, 86252F (2013) S. Okur, K. Jarašiūnas, S. Hafiz, J. Leach, T. Paskova, V. Avrutin, H. Morkoç, and Ü. Özgür, Recombination dynamics in nonpolar m-plane GaN investigated by time- and polarization-resolved photoluminescence, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VIII 8625, 86252D (2013) R. A. Ferreyra, X. Li, F. Zhang, C. Zhu, N. Izyumskaya, C. Kayis, V. Avrutin, Ü. Özgür, and H. Morkoç, Microwave performance of AlGaN/AlN/GaN-based single and coupled channel HFETs, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VIII 8625, 86252B (2013). 9

10 153. F. Zhang, S. A. Hafiz, X. Li, S. Okur, V. Avrutin, Ü. Özgür, and H. Morkoç, InGaN-based multi-double heterostructure light emitting diodes with electron injection layers, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VIII 8625, 86251J (2013) A. Matulionis, J. Liberis, E. Šermukšnis, L. Ardaravičius, A. Šimukovič, C. Kayis, C.Y. Zhu, R. Ferreyra, V. Avrutin, Ü. Özgür, and H. Morkoç, Window for better reliability of nitride heterostructure field effect transistors, Microelectronics Reliability 52, 2149 (2012) (Proceedings of the 23 rd European Symposium on Reliability of Electron Devices (ESREF), Failure Physics and Analysis, October 1-5, 2012, Cagliari, Italy) 155. K. Jarašiūnas, P. Ščajev, T. Malinauskas, M. Kato, E. Ivakin, M. Nesladek, K. Haenen, Ü. Özgür, and H. Morkoç, Carrier diffusivity in highly excited bulk SiC, GaN, and diamond crystals by optical probes, Materials Science Forum , 309 (2012). (Proceedings of the International Conference on Silicon Carbide and Related Materials (ICSCRM), September 11-16, 2011, Cleveland, OH) 156. C. Zhu, M. Wu, C. Kayis, F. Zhang, X. Li, R. Ferreyra, V. Avrutin, Ü. Özgür, and H. Morkoç, Degradation mechanisms of InAlN/GaN based HFETs under high electric field stress, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VII 8262, (2012) R. A. Ferreyra, C. Kayis, C. Zhu, V. Avrutin, Ü. Özgür, and H. Morkoç, Measurements of off-state electrical stress in InAlN/AlN/GaN heterostructure field-effect transistors with varying In compositions, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VII 8262, 82621U (2012) A.B. Yankovich, A.V. Kvit, H.Y. Liu, X. Li, F. Zhang, V. Avrutin, N. Izyumskaya, Ü. Özgür, H. Morkoç, and P.M. Voyles, Pyramid nano-voids in GaN and InGaN, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VII 8262, (2012) F. Zhang, X. Li, S. Okur, V. Avrutin, Ü. Özgür, H. Morkoç, S. M. Hong, S. H. Yen, T.S. Hsu, and A. Matulionis, The Impact of Active Layer Design on Quantum Efficiency of InGaN Light Emitting Diodes, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VII 8262, 82621G (2012) H.Y. Liu, X. Li, F. Zhang, V. Avrutin, N. Izyumskaya, Ü. Özgür, A.B. Yankovich, A.V. Kvit, P.M. Voyles, and H. Morkoç, Electrical properties of ZnO:Ga as a transparent conducting oxide in InGaN based light emitting diodes, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VII 8262, (2012) K. Jarašiūnas, P. Ščajev, S. Nargelas, R. Aleksiejūnas, J. Leach, T. Paskova, S. Okur, Ü. Özgür, and H. Morkoç, Recombination and diffusion processes in polar and nonpolar bulk GaN investigated by time-resolved photoluminescence and nonlinear optical techniques, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VII 8262, 82620G (2012) T. Malinauskas, A. Kadys, T. Grinys, S. Nargelas, R. Aleksiejūnas, S. Miasojedovas, J. Mickevičius, R. Tomašiūnas, K. Jarašiūnas, M. Vengris, S. Okur, X. Li, F. Zhang, V. Avrutin, Ü. Özgür, and H. Morkoç, Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VII 8262, 82621S (2012) C. Kayis, R. A. Ferreyra, M. Wu, X. Li, Ü. Özgür, A. Matulionis, and H. Morkoç, Degradation analysis of InAlN/AlN/GaN heterostructure field-effect transistors using low-frequency noise and current-transient methods: hot phonon effects, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VII 8262, 82621W (2012) N. Izyumskaya, S.J. Liu, V. Avrutin, S. Okur, Ü. Özgür, S. Metzner, C. Karbaum, F. Bertram, J. Christen, D.J. Smith, and H. Morkoç, Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VII 8262, (2012) P. Ščajev, K. Jarašiūnas, S. Okur, Ü. Özgür, and H. Morkoç, Carrier dynamics under two- and single-photon excitation in bulk GaN, Physica Status Solidi B 249, 503 (2012). (Selected from the Proceedings of the 9 th International Conference on Nitride Semiconductors (ICNS) Glasgow, UK, July 10-15, 2011) H. Y. Liu, V. Avrutin, N. Izyumskaya, M. A. Reshchikov, S. Wolgast, C. Kurdak, A. B. Yankovich, A. Kvit, P. Voyles, Ü. Özgür, and H. Morkoç, Effect of growth conditions on electronic and structural properties of GZO films grown by plasma-enhanced molecular beam epitaxy on p-gan(0001)/sapphire templates, Materials Research Society (MRS) Symposium Proceedings 1315, 107 (2011). (MRS Fall Meeting, November 29 December 3, 2010, Boston, MA, Transparent Conducting Oxides and Applications) 167. X. Li, X. Ni, H. Y. Liu, F. Zhang, S. Liu, J. Lee, V. Avrutin, Ü. Özgür, T. Paskova, G. Mulholland, K. R. Evans, and H. Morkoç, On the reduction of efficiency loss in polar c-plane and nonpolar m-plane InGaN light emitting diodes, Physica Status Solidi C 8, 1560 (2011). (Proceedings of the 3 rd International Symposium on Growth of III-Nitrides (ISGN), Montpellier, France, July 4-7, 2010). 10

11 168. H. Y. Liu, X. Li, S. Liu, X. Ni, M. Wu, V. Avrutin, N. Izyumskaya, Ü. Özgür, A. B. Yankovich, A. V. Kvit, P. M. Voyles, and H. Morkoç, InGaN based light emitting diodes utilizing Ga-doped ZnO as a highly transparent contact to p-gan, Physica Status Solidi C 8, 1548 (2011). (Proceedings of the 3 rd International Symposium on Growth of III- Nitrides (ISGN), Montpellier, France, July 4-7, 2010) C. Kayis, J. H. Leach, C. Y. Zhu, M. Wu, X. Li, Ü. Özgür, H. Morkoç, X. Yang, V. Misra, and P. H. Handel, Measurements of generation-recombination effect by low-frequency phase noise technique in AlGaN/GaN MOSHFETs, Physica Status Solidi C 8, 1539 (2011). (Proceedings of the 3 rd International Symposium on Growth of III-Nitrides (ISGN), Montpellier, France, July 4-7, 2010) H. Gao, J. Lee, X. Ni, J. Leach, Ü. Özgür, and H. Morkoç, Deep Inductively Coupled Plasma Etching of ELO-GaN With High Fill Factor, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VI 7939, (2011) F. Zhang, X. Li, S. Liu, S. Okur, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, and M. Kisin, Impact of ballistic electron transport on efficiency of InGaN based LEDs, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VI 7939, (2011) C. Kayis, J. H. Leach, C. Y. Zhu, M. Wu, X. Li, X. Yang, V. Misra, P. H. Handel, Ü. Özgür, and H. Morkoç, Lowfrequency noise measurements of generation-recombination effect and field-assisted emission in AlGaN/GaN MOSHFETs and HFETs, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VI 7939, 79392F (2011) H. Y. Liu, X. Li, S. Liu, X. Ni, V. Avrutin, N. Izyumskaya, Ü. Özgür, A.B. Yankovich, A.V. Kvit, P.M. Voyles, M.A. Reshchikov, and H. Morkoç, Optimization of ZnO:Ga properties for application as a transparent conducting oxide in InGaN based light emitting diodes, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VI 7939, 79392E (2011) A. B. Yankovich, A.V. Kvit, X. Li, F. Zhang, V. Avrutin, H.Y. Liu, N. Izyumskaya, Ü. Özgür, H. Morkoç, and P. M. Voyles, Vertical composition variation in nominally uniform InGaN layers revealed by aberration-corrected STEM imaging, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VI 7939, 79391E (2011) N. Izyumskaya, S.J. Liu, S. Okur, V. Avrutin, M. Wu, Ü. Özgür, S. Metzner, F. Bertram, J. Christen, D.J. Smith, and H. Morkoç, Optical properties of nonpolar (1-100) and semipolar (1-101) GaN grown by MOCVD on Si patterned substrates, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VI 7939, 79391W (2011) J.H. Leach, N. Biswas, T. Paskova, E.A. Preble, K.R. Evans, M. Wu, X. Ni, X. Li, Ü. Özgür, and H. Morkoç, Effect of Substrate Offcut on AlGaN/GaN HFET structures on Bulk GaN Substrates, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VI 7939, 79390E (2011) C. Kayis, C. Y. Zhu, M. Wu, X. Li, Ü. Özgür, and H. Morkoç, Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices VI 7939, 79392G (2011) H. Y. Liu, X. Li, X. Ni, V. Avrutin, N. Izyumskaya, Ü. Özgür, and H. Morkoç, InGaN light emitting diodes with highly transparent ZnO:Ga electrodes, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices V 7602, 76020I (2010) X. Li, X. Ni, J. Lee, M. Wu, Ü. Özgür, and H. Morkoç, Efficiency retention at high current injection levels in m- plane InGaN light emitting diodes, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices V 7602, 76021R (2010) J. Lee, X. Li, X. Ni, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland and K. R. Evans, On carrier spillover in c- and m-plane InGaN light emitting diodes, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices V 7602, , (2010) J. Lee, X. Ni, M. Wu, X. Li, R. Shimada, Ü. Özgür, A. A. Baski, H. Morkoç, T. Paskova, G. Mulholland and K. R. Evans, Internal quantum efficiency of c-plane InGaN and m-plane InGaN on Si, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices V 7602, 76021N, (2010) X. Ni, M. Wu, J. Lee, X. Li, A. A. Baski, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, F. Bertram, J. Christen, L. Zhou, and D. J. Smith, Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices V 7602, (2010) J. Leach, M. Wu, X. Ni, X. Li, Ü. Özgür, and H. Morkoç, Measurements of gate lag in high quality nearly lattice matched InAlN/AlN/GaN HFET structures, Proceedings of SPIE, The International Society of Optical Engineering, Gallium Nitride Materials and Devices V 7602, 76020O (2010). 11