Evaluation and Qualification of RadHard Infineon Power MOSFETs
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1 Chart 1 > Evaluation and Qualification of RadHard Infineon Power MOSFETs > G. Joormann MEWS#25 > 2. November 2012 Evaluation and Qualification of RadHard Infineon Power MOSFETs The 25th Microelectronics Workshop (MEWS25)
2 Chart 2 > Evaluation and Qualification of RadHard Infineon Power MOSFETs > G. Joormann MEWS#25 > 2. November 2012 Agenda Initial situation Various Activities Improving the Availability of Power MOSFETs Development, Evaluation and Qualification Activities at DLR Conclusion
3 Chart 3 > Evaluation and Qualification of RadHard Infineon Power MOSFETs > G. Joormann MEWS#25 > 2. November 2012 Initial situation RadHard Power MOSFETs are needed in almost ever space equipment Worldwide only one space qualified U.S. manufacturer of RadHard Power MOSFETs Quality problems Monopoly situation Stringent export regulations (ITAR) Success of European Space Industry depends on the U.S. supply European activities started several years ago to develop RadHard MOSFETs
4 Chart 4 > Evaluation and Qualification of RadHard Infineon Power MOSFETs > G. Joormann MEWS#25 > 2. November 2012 Various Activities Improving the Availability of Power MOSFETs 2004 CNES started Development, Evaluation and Qualification Activities on ST Microelectronic (France) Power MOSFETs: Listed in ESCC QPL since October 2010 Power MOSFET, N-CHANNEL, Type: STRH100N10FSY3 VDS,Max = 100 V rds(on) = 35 mω, (VGS=12V, ID=24A) IR Power MOSFETs: Disadvantages (see previous slide) Part IRHNJ57234SE (Jedec:2N7487U3): VDS,Max = 250 V rds(on) = 400 mω
5 Chart 5 > Evaluation and Qualification of RadHard Infineon Power MOSFETs > G. Joormann MEWS#25 > 2. November 2012 Development, Evaluation and Qualification Activities at DLR Analysis and Simulation of Radiation Damages on Infineon MOSFETs Investigation of Necessary Measures to get RadHard Infineon CoolMOS Transistors Development of RadHard Infineon PowerMOSFETs Evaluation and Qualification of RadHard Infineon PowerMOSFETs Power MOSFET, N-CHANNEL, Type: BUY **CS*** VDS,Max = 250 V rds(on) = 130 mω, (VGS=10V, ID=34A) rds(on) = 30 mω, (VGS=10V, ID=8A)
6 Chart 6 > Evaluation and Qualification of RadHard Infineon Power MOSFETs > G. Joormann MEWS#25 > 2. November Evaluation and Qualification of RadHard Infineon PowerMOSFETs Target applications (Easy Drop In): DC/DC converters Buck-Boost, Switch Mode, etc. Motor Controls Switch with low loss Best in class RadHard Technology: TID up to 300krad on request SEE up to LET 55@90μm (Xe) and LET38@279μm (Xe) Listed in ESCC QPL in August 2012 More Information: Type RDSon IDC QG Umax Package BUY25CS12J mOhm 12A 42nC 250V SMD0.5 BUY10CS12J mOhm 12A 42nC 100V SMD0.5 BUY25CS54A-01 25mOhm 54A 180nC 250V SMD2
7 Chart 7 > Evaluation and Qualification of RadHard Infineon Power MOSFETs > G. Joormann MEWS#25 > 2. November 2012 TID (Pre- and Post-Irradiation) Tests by Infineon Sample type BUY25CS12J (SMD05): IDSS(200V) IGSS(+/-20V), RDSON(8A, Ugs=10V), VSD(12.4A), Vgs(th)(1mA), Sample type BUY25CS54A (SMD2): IDSS(200V), IGSS(+/-20V), RDSON(34A, Ugs=10V), VSD(54A), Vgs(th)(1mA),
8 Chart 8 > Evaluation and Qualification of RadHard Infineon Power MOSFETs > G. Joormann MEWS#25 > 2. November 2012 TID (Pre- and Post-Irradiation) Tests by Infineon
9 Chart 9 > Evaluation and Qualification of RadHard Infineon Power MOSFETs > G. Joormann MEWS#25 > 2. November 2012 TID (Pre- and Post-Irradiation) Tests by Infineon
10 Chart 10 > Evaluation and Qualification of RadHard Infineon Power MOSFETs > G. Joormann MEWS#25 > 2. November 2012 TID Tests by NASA Average I DSS as a function of total accumulated dose (open symbols) and annealing (filled symbols). Standard error bars are smaller than the data point symbols and thus are not shown. Dashed line demarcates datasheet specification for the maximum I DSS.
11 Chart 11 > Evaluation and Qualification of RadHard Infineon Power MOSFETs > G. Joormann MEWS#25 > 2. November 2012 TID Tests by NASA Change in average gate threshold voltage as a function of total accumulated dose (open symbols) and annealing (filled symbols). Standard error bars are smaller than the data point symbols and thus are not shown. On-state biased samples exhibited a slight recovery during the overnight dose rate of 26.4 rad(si)/min between the 125 krad(si) and 150 krad(si) total dose steps. Dashed line demarcates datasheet specification for the minimum V GS(th).
12 Chart 12 > Evaluation and Qualification of RadHard Infineon Power MOSFETs > G. Joormann MEWS#25 > 2. November 2012 SEE Tests by Infineon
13 Chart 13 > Evaluation and Qualification of RadHard Infineon Power MOSFETs > G. Joormann MEWS#25 > 2. November 2012 SEE Tests by Infineon
14 Chart 14 > Evaluation and Qualification of RadHard Infineon Power MOSFETs > G. Joormann MEWS#25 > 2. November 2012 SEE Tests by Infineon / Comparison
15 Chart 15 > Evaluation and Qualification of RadHard Infineon Power MOSFETs > G. Joormann MEWS#25 > 2. November 2012 Competitor Analysis
16 Chart 16 > Evaluation and Qualification of RadHard Infineon Power MOSFETs > G. Joormann MEWS#25 > 2. November 2012 Conclusion The 250V RadHard Power MOSFETs of Infineon are the first European qualified RH Power-switches in this Voltage range They fulfill all requirements concerning radiation hardness The components are ITAR free The electrical parameters are superior compared to the devices in the market They are available as ESCC qualified flight parts
17 Chart 17 > Evaluation and Qualification of RadHard Infineon Power MOSFETs > G. Joormann MEWS#25 > 2. November 2012 Thank you for your attention! Dipl.-Ing. Guido Joormann Standardization and EEE Components Telephone Telefax German Aerospace Center Quality and Product Assurance Porz-Wahnheide, Linder Höhe Köln, Germany Dr.-Ing. Andreas K. Jain Head - Standardization and EEE Components Telephone Telefax German Aerospace Center Quality and Product Assurance Porz-Wahnheide, Linder Höhe Köln, Germany andreas.jain@dlr.de Dipl.-Ing. Hans-Dieter Herrmann Standardization and EEE Components Telephone Telefax German Aerospace Center Quality and Product Assurance Porz-Wahnheide, Linder Höhe Köln, Germany hans-dieter.herrmann@dlr.de
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