CD4008BMS. CMOS 4-Bit Full Adder With Parallel Carry Out. Features. Pinout. Logic Diagram. Applications. Description.
|
|
- Joan Anthony
- 5 years ago
- Views:
Transcription
1 CD48BMS November 994 CMOS 4-Bit Full Adder With Parallel Carry Out Features Pinout High-Voltage Type (2V Rating) 4 Sum Outputs Plus Parallel Look-ahead Carry-Output CD48BMS TOP VIEW High-Speed Operation - Sum In-To-Sum Out, 6ns Typ; Carry In-To-Carry Out, 5ns Typ. At VDD = V, CL=5pF A4 B VDD B4 Standardized Symmetrical Output Characteristics % Tested For Quiescent Current At 2V A3 B2 A S4 S3 Maximum Input Current of µa at 8V Over Full Package-Temperature Range; B A 6 7 S2 S - na at 8V and 25 o C VSS 8 9 C Noise Margin (Over Full Package Temperature Range): - V at VDD = 5V - 2V at VDD = V - 2.5V at VDD = 5V 5V, V and 5V Parametric Ratings Meets All Requirements of JEDEC Tentative Standard No. 3B, Standard Specifications for Description of B Series CMOS Devices Applications Binary Addition/Arithmetic Units Logic Diagram * 5 B4 * A4 * 2 B3 A3 * 3 HIGH SPEED PAR CARRY 4 (CARRY-OUT) 3 SUM C4 2 SUM S4 S3 Description CD48BMS types consist of four full adder stages with fast look ahead carry provision from stage to stage. Circuitry is included to provide a fast parallel-carry-out but to permit high-speed operation in arithmetic sections using several CD48BMS s. CD48BMS inputs include the four sets of bits to be added, A to A4 and B to B4, in addition to the Carry In bit from a previous section. CD48BMS outputs include the four sum bits, S to S4. In addition to the high speed parallel-carryout which may be utilized at a succeeding CD48BMS section. The CD48BMS is supplied in these 6-lead outline packages: B2 * 4 A2 * 5 * 6 B A * 7 * 9 C (CARRY-IN) VDD = 6 VSS = 8 SUM SUM C3 C2 TRUTH TABLE A i B i C i C O SUM S2 S *ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK VDD VSS Braze Seal DIP H4T Frit Seal DIP HF Ceramic Flatpack H6W CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures INTERSIL or Copyright Intersil Corporation File Number 3292
2 Specifications CD48BMS Absolute Maximum Ratings DC Supply Voltage Range, (VDD) V to +2V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs V to VDD +.5V DC Input Current, Any One Input ±mA Operating Temperature Range to +25 o C Package Types D, F, K, H Storage Temperature Range (TSTG) o C to +5 o C Lead Temperature (During Soldering) o C At Distance /6 ± /32 Inch (.59mm ±.79mm) from case for s Maximum Reliability Information Thermal Resistance θ ja θ jc Ceramic DIP and FRIT Package o C/W 2 o C/W Flatpack Package o C/W 2 o C/W Maximum Package Power Dissipation (PD) at +25 o C For TA = to + o C (Package Type D, F, K) mW For TA = + o C to +25 o C (Package Type D, F, K).....Derate Linearity at 2mW/ o C to 2mW Device Dissipation per Output Transistor mw For TA = Full Package Temperature Range (All Package Types) Junction Temperature o C TABLE. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A PARAMETER SYMBOL NDITIONS (NOTE ) SUBGROUPS TEMPERATURE MIN MAX UNITS Supply Current IDD VDD = 2V, VIN = VDD or GND +25 o C - µa o C - µa VDD = 8V, VIN = VDD or GND 3 - µa Input Leakage Current IIL VIN = VDD or GND VDD = o C - - na o C - - na VDD = 8V na Input Leakage Current IIH VIN = VDD or GND VDD = o C - na o C - na VDD = 8V 3 - na Output Voltage VOL5 VDD = 5V, No Load, o C, +25 o C, - 5 mv Output Voltage VOH5 VDD = 5V, No Load (Note 3), o C, +25 o C, V Output Current (Sink) IOL5 VDD = 5V, VOUT =.4V +25 o C.53 - ma Output Current (Sink) IOL VDD = V, VOUT =.5V +25 o C.4 - ma Output Current (Sink) IOL5 VDD = 5V, VOUT =.5V +25 o C ma Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V +25 o C ma Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V +25 o C ma Output Current (Source) IOH VDD = V, VOUT = 9.5V +25 o C ma Output Current (Source) IOH5 VDD = 5V, VOUT = 3.5V +25 o C ma N Threshold Voltage VNTH VDD = V, ISS = -µa +25 o C V P Threshold Voltage VPTH VSS = V, IDD = µa +25 o C V Functional F VDD = 2.8V, VIN = VDD or GND o C VOH > VOL < V VDD = 2V, VIN = VDD or GND o C VDD/2 VDD/2 VDD = 8V, VIN = VDD or GND 8A +25 o C VDD = 3V, VIN = VDD or GND 8B Input Voltage Low (Note 2) VIL VDD = 5V, VOH > 4.5V, VOL <.5V, 2, o C, +25 o C, -.5 V Input Voltage High (Note 2) Input Voltage Low (Note 2) Input Voltage High (Note 2) NOTES: VIH VDD = 5V, VOH > 4.5V, VOL <.5V, 2, o C, +25 o C, V VIL VIH VDD = 5V, VOH > 3.5V, VOL <.5V VDD = 5V, VOH > 3.5V, VOL <.5V. All voltages referenced to device GND, % testing being implemented. 2. Go/No Go test with limits applied to inputs, 2, o C, +25 o C, - 4 V, 2, o C, +25 o C, - V 3. For accuracy, voltage is measured differentially to VDD. Limit is.5v max
3 Specifications CD48BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL NDITIONS (NOTE, 2) Propagation Delay Sum In to Sum Out Propagation Delay Carry In To Cum Out Propagation Delay Sum In To Carry Out Propagation Delay Carry In To Carry Out Transition Time TPHL TPLH TPHL2 TPLH2 TPHL3 TPLH3 TPHL4 TPLH4 GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS VDD = 5V, VIN = VDD or GND o C - 8 ns, +25 o C, - 8 ns VDD = 5V, VIN = VDD or GND o C - 74 ns, +25 o C, ns VDD = 5V, VIN = VDD or GND o C - 4 ns, +25 o C, - 54 ns VDD = 5V, VIN = VDD or GND o C - 2 ns, +25 o C, - 27 ns TTHL VDD = 5V, VIN = VDD or GND o C - 2 ns TTLH, +25 o C, - 27 ns NOTES:. CL = 5pF, RL = 2K, Input TR, TF < 2ns. 2. and +25 o C limits guaranteed, % testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL NDITIONS NOTES TEMPERATURE MIN MAX UNITS Supply Current IDD VDD = 5V, VIN = VDD or GND, 2, +25 o C - 5 µa +25 o C - 5 µa VDD = V, VIN = VDD or GND, 2, +25 o C - µa +25 o C - 3 µa VDD = 5V, VIN = VDD or GND, 2, +25 o C - µa +25 o C - 6 µa Output Voltage VOL VDD = 5V, No Load, o C, +25 o C, - 5 mv Output Voltage VOL VDD = V, No Load, o C, +25 o C, Output Voltage VOH VDD = 5V, No Load, o C, +25 o C, Output Voltage VOH VDD = V, No Load, o C, +25 o C, - 5 mv V V Output Current (Sink) IOL5 VDD = 5V, VOUT =.4V, o C.36 - ma.64 - ma Output Current (Sink) IOL VDD = V, VOUT =.5V, o C.9 - ma.6 - ma Output Current (Sink) IOL5 VDD = 5V, VOUT =.5V, o C ma ma Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V, o C ma ma Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V, o C ma ma 7-677
4 Specifications CD48BMS Output Current (Source) IOH VDD = V, VOUT = 9.5V, o C ma ma Output Current (Source) IOH5 VDD =5V, VOUT = 3.5V, o C ma ma Input Voltage Low VIL VDD = V, VOH > 9V, VOL < V, o C, +25 o C, - 3 V Input Voltage High VIH VDD = V, VOH > 9V, VOL < V, o C, +25 o C, Propagation Delay Sum In To Sum Out Propagation Delay Carry In To Sum Out Propagation Delay Sum In To Carry Out Propagation Delay Carry In To Carry Out TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL NDITIONS NOTES TEMPERATURE TPHL TPLH TPHL2 TPLH2 TPLH3 TPHL3 TPHL4 TPLH V VDD = V, 2, o C - 32 ns VDD = 5V, 2, o C - 23 ns VDD = V, 2, o C - 3 ns VDD = 5V, 2, o C - 23 ns VDD = V, 2, o C - 8 ns VDD = 5V, 2, o C - 3 ns VDD = V, 2, o C - ns VDD = 5V, 2, o C - 8 ns Transition Time TTHL VDD = V, 2, o C - ns TTLH VDD = 5V, 2, o C - 8 ns Input Capacitance CIN Any Input, o C pf NOTES:. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 5pF, RL = 2K, Input TR, TF < 2ns. MIN MAX UNITS TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL NDITIONS NOTES TEMPERATURE MIN MAX UNITS Supply Current IDD VDD = 2V, VIN = VDD or GND, o C - 25 µa N Threshold Voltage VNTH VDD = V, ISS = -µa, o C V N Threshold Voltage VNTH VDD = V, ISS = -µa, o C - ± V Delta P Threshold Voltage VPTH VSS = V, IDD = µa, o C V P Threshold Voltage VPTH VSS = V, IDD = µa, o C - ± V Delta Functional F VDD = 8V, VIN = VDD or GND +25 o C VOH > VDD = 3V, VIN = VDD or GND VDD/2 VOL < VDD/2 V 7-678
5 Specifications CD48BMS TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS Propagation Delay Time NOTES: PARAMETER SYMBOL NDITIONS NOTES TEMPERATURE TPHL TPLH. All voltages referenced to device GND. 2. CL = 5pF, RL = 2K, Input TR, TF < 2ns. VDD = 5V, 2, 3, o C -.35 x +25 o C Limit 3. See Table 2 for +25 o C limit. 4. Read and Record MIN MAX UNITS ns TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25 O C PARAMETER SYMBOL DELTA LIMIT Supply Current - MSI-2 IDD ±.µa Output Current (Sink) IOL5 ± 2% x Pre-Test Reading Output Current (Source) IOH5A ± 2% x Pre-Test Reading TABLE 6. APPLICABLE SUBGROUPS NFORMANCE GROUP MIL-STD-883 METHOD GROUP A SUBGROUPS READ AND RERD Initial Test (Pre Burn-In) % 54, 7, 9 IDD, IOL5, IOH5A Interim Test (Post Burn-In) % 54, 7, 9 IDD, IOL5, IOH5A Interim Test 2 (Post Burn-In) % 54, 7, 9 IDD, IOL5, IOH5A PDA (Note ) % 54, 7, 9, Deltas Interim Test 3 (Post Burn-In) % 54, 7, 9 IDD, IOL5, IOH5A PDA (Note ) % 54, 7, 9, Deltas Final Test % 54 2, 3, 8A, 8B,, Group A Sample 55, 2, 3, 7, 8A, 8B, 9,, Group B Subgroup B-5 Sample 55, 2, 3, 7, 8A, 8B, 9,,, Deltas Subgroups, 2, 3, 9,, Subgroup B-6 Sample 55, 7, 9 Group D Sample 55, 2, 3, 8A, 8B, 9 Subgroups, 2 3 NOTE:. 5% Parameteric, 3% Functional; Cumulative for Static and 2. TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 TEST READ AND RERD NFORMANCE GROUPS METHOD PRE-IRRAD POST-IRRAD PRE-IRRAD POST-IRRAD Group E Subgroup 2 55, 7, 9 Table 4, 9 Table 4 TABLE 8. BURN-IN AND IRRADIATION TEST NNECTIONS FUNCTION OPEN GROUND VDD 9V ± -.5V Static Burn-In - 4-9, 5 6 Note Static Burn-In 2 Note Dynamic Burn- In Note Irradiation Note , 9, 5, 6 OSCILLATOR 5kHz 25kHz , 4, 6, 5, 3, 5, 7, , 9, 5,
6 Specifications CD48BMS TABLE 8. BURN-IN AND IRRADIATION TEST NNECTIONS OSCILLATOR FUNCTION OPEN GROUND VDD 9V ± -.5V 5kHz 25kHz NOTE:. Each pin except VDD and GND will have a series resistor of K ± 5%, VDD = 8V ±.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, failures, VDD = V ±.5V Typical Propagation Delay A3-6 B3-6 CD48 S3-6 2(5) (Ci - ) + (Si - ) + (Ci - SO) = 345 Ci A9-2 B9-2 CD48 S (Ci - ) + (Si - ) + (Ci - SO) Ci A5-8 A5-8 CD48 S (Si - ) + (Ci - SO) = Ci A - 4 B - 4 CD48 S (Si - SO) Ci VSS ALL SUMS SETTLED AFTER 345ns FIGURE. PROPAGATION DELAY FOR A 6 BIT ADDER (V OPERATION) All Intersil semiconductor products are manufactured, assembled and tested under ISO9 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop Melbourne, FL 3292 TEL: (32) FAX: (32) EUROPE Intersil SA Mercure Center, Rue de la Fusee 3 Brussels, Belgium TEL: (32) FAX: (32) ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) FAX: (886)
7 CD48BMS Typical Performance Characteristics SUM-IN TO SUM-OUT PROPAGATION DELAY TIME (tphl, tplh) (ns) SUPPLY VOLTAGE (VDD) = 5V V 5V LOAD CAPACITANCE (CL) (pf) FIGURE 2. TYPICAL SUM-IN TO SUM-OUT PROPAGATION DELAY TIME vs LOAD CAPACITANCE CARRY-IN TO CARRY-OUT PROPAGATION DELAY TIME (tphl, tplh) (ns) SUPPLY VOLTAGE (VDD) = 5V V 5V LOAD CAPACITANCE (CL) (pf) FIGURE 3. TYPICAL CARRY-IN TO CARRY-OUT PROPAGA- TION DELAY TIME vs LOAD CAPACITANCE CARRY-IN TO CARRY-OUT PROPAGATION DELAY TIME (tphl, tplh) (ns) SUPPLY VOLTAGE (VDD) = 5V V 5V SUM-IN TO CARRY-OUT PROPAGATION DELAY TIME (tphl, tplh) (ns) SUPPLY VOLTAGE (VDD) = 5V V 5V LOAD CAPACITANCE (CL) (pf) LOAD CAPACITANCE (CL) (pf) FIGURE 4. TYPICAL CARRY-IN TO SUM-OUT PROPAGATION DELAY TIME vs LOAD CAPACITANCE FIGURE 5. TYPICAL SUM-IN TO CARRY-OUT PROPAGATION DELAY TIME vs LOAD CAPACITANCE DRAIN-TO-SOURCE VOLTAGE (VDS) (V) GATE-TO-SOURCE VOLTAGE (VGS) = -5V -V -5V OUTPUT HIGH (SOURCE) CURRENT (IOH) (ma) DRAIN-TO-SOURCE VOLTAGE (VDS) (V) GATE-TO-SOURCE VOLTAGE (VGS) = -5V -V -5V OUTPUT HIGH (SOURCE) CURRENT (IOH) (ma) FIGURE 6. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS FIGURE 7. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS 7-68
8 CD48BMS Typical Performance Characteristics (Continued) OUTPUT LOW (SINK) CURRENT (IOL) (ma) GATE-TO-SOURCE VOLTAGE (VGS) = 5V V 5V OUTPUT LOW (SINK) CURRENT (IOL) (ma) GATE-TO-SOURCE VOLTAGE (VGS) = 5V V 5V 5 5 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 8. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS 5 5 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 9. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS POWER DISSIPATION/PACKAGE (PD) (µw) SUPPLY VOLTAGE (VDD) = 5V V 3.5V INPUT FREQUENCY (fφ) (khz) FIGURE. TYPICAL DISSIPATION CHARACTERISTICS 5V 5V LOAD CAPACITANCE (CL) = 5pF (CL) = 5pF Chip Dimensions and Pad Layouts METALLIZATION: Thickness: kå 4kÅ, AL. PASSIVATION:.4kÅ - 5.6kÅ, Silane BOND PADS:.4 inches X.4 inches MIN DIE THICKNESS:.98 inches -.28 inches Dimensions in parentheses are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils ( -3 inch) 7-682
MS52XX-C&T SMD Pressure Sensor
1, 4, and 7 bar absolute pressure range Piezoresistive silicon micromachined sensor Surface mount 6.2 x 6.4 mm LCP plastic cap for easy connection Uncompensated Optional trimmed offset Low noise, high
More information204-10SDRD/S530-A3 LAMP. Features. Description. Applications. Revision 1. LifecyclePhase: Expired Period: Forever. Choice of various viewing angles
Features Choice of various viewing angles Available on tape and reel. Reliable and robust Pb free The product itself will remain within RoHS compliant version. Description The series is specially designed
More information256/512 /1K /2K/4K x 9 Asynchronous FIFO
/25/29/ fax id: 5404 Features Asynchronous first-in first-out (FIFO) buffer memories 256 x 9 (CY7C419) 512 x 9 (CY7C421) 1K x 9 (CY7C425) 2K x 9 (CY7C429) 4K x 9 (CY7C433) Dual-ported AM cell High-speed
More information1224SUBC/C470/S400-A4
Features Choice of various viewing angles Available on tape and reel. Reliable and robust The product itself will remain within RoHS compliant version. Compliance with EU REACH Compliance Halogen Free.(Br
More informationEALP05RDBRA0 LAMP. Features. Description. Applications. Choice of various viewing angles. Available on tape and reel. Reliable and robust
Features Choice of various viewing angles Available on tape and reel. Reliable and robust The product itself will remain within RoHS compliant version. Compliance with EU REACH Compliance Halogen free.
More informationSeries AM3T-VZ 3 Watt DC-DC Converter
Click on Series name for product info on aimtec.com Series AM3T-VZ FEATURES: Wide 2:1 Range 24 Pin DIP Package High up to 82% Metal Package Operating Temperature -4 o C to +85 o C / Isolation 15 or 35
More informationMS54XX Miniature SMD Pressure Sensor
SPECIFICATIONS 1, 7, 12, and 70 bar absolute pressure range Uncompensated Piezoresistive silicon micromachined sensor Miniature surface mount Ceramic carrier Low noise, high sensitivity, high linearity
More informationLAMP SUGC/S400-A5
Features Choice of various viewing angles Available on tape and reel. Reliable and robust Pb free The product itself will remain within RoHS compliant version. Compliance with EU REACH Compliance Halogen
More informationCMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and x 9
Integrated Device Technology, Inc. CMOS ASYNCHONOUS FIFO 2048 x, 406 x, 812 x and 16384 x 7203 7204 7205 FEATUES: First-In/First-Out Dual-Port memory 2048 x organization (7203) 406 x organization (7204)
More informationLAMP 336SURSYGWS530-A3
Features Two chips are matched for uniform light output, wide viewing angle Long life-solid state reliability I.C. compatible/low power consumption The product itself will remain within RoHS compliant
More information333-2SURC/H3/S530-A4 LAMP. Features. Description. Applications. 1 Ver.:2 Release Date:12/13/2016 狀態 :Approved( 正式發行 )
Features Choice of various viewing angles Available on tape and reel. Reliable and robust Pb free The product itself will remain within RoHS compliant version. Description The series is specially designed
More informationASDX Series Silicon Pressure Sensors
ASDX Series Silicon Pressure Sensors DESCRIPTION The ASDX Series is a Silicon Pressure Sensor offering a ratiometric analog interface for reading pressure over the specified full scale pressure span and
More informationAMS 2710 PCB pressure sensor module with V output
FEATURES Universal pressure sensor module with 0.. 10 V voltage output Fully calibrated and temperature compensated sensor module Variants for (bidirectional) differential, gage, absolute and barometric
More informationAsynchronous, Cascadable 8K/16K/32K/64K x9 FIFOs
60A CY7C460A/CY7C462A Features Asynchronous, Cascadable 8K/16K/32K/64K x9 FIFOs Functional Description High-speed, low-power, first-in first-out (FIFO) memories 8K x 9 FIFO (CY7C460A) 16K x 9 FIFO (CY7C462A)
More informationZener Diodes with Surge Current Specification
Zener Diodes with Surge Current Specification DESIGN SUPPORT TOOLS Models Available 949588 click logo to get started FEATURES Glass passivated junction Hermetically sealed package Clamping time in picoseconds
More information256/512/1K/2K/4K x 9 Asynchronous FIFO
256/512/1K/2K/4K x 9 Asynchronous FIFO CY7C419/21/25/29/33 256/512/1K/2K/4K x 9 Asynchronous FIFO Features Asynchronous First-In First-Out (FIFO) Buffer Memories 256 x 9 (CY7C419) 512 x 9 (CY7C421) 1K
More informationSPECIFICATIONS FOR APPROVAL
CUSTOMER :. DATE :. REV : REV. 0.0. preliminary SPECIFICATIONS FOR APPROVAL 6060 70mW 1in1 UVC LED PKG (@ If =350mA) MODEL NAME : LEUVA66H70HF00 RoHS Compliant APPROVAL REMARK APPENDIX DESIGNED CHECKED
More informationMS54XX Miniature SMD Pressure Sensor
1, 7, 12, and 70 bar absolute pressure range Uncompensated Piezoresistive silicon micromachined sensor Miniature surface mount Ceramic or PCB carrier Low noise, high sensitivity, high linearity RoHScompatible
More informationMS54XX Miniature SMD Pressure Sensor
1, 7, 12, and 70 bar absolute pressure range Uncompensated Piezoresistive silicon micromachined sensor Miniature surface mount Ceramic carrier Low noise, high sensitivity, high linearity DESCRIPTION The
More informationIDT7200L IDT7201LA IDT7202LA
CMOS ASYCHONOUS FIFO 256 x, 512 x, 1,024 x 7200L 7201LA 7202LA FEATUES: First-In/First-Out dual-port memory 256 x organization (7200) 512 x organization (7201) 1,024 x organization (7202) Low power consumption
More information82C288 BUS CONTROLLER FOR PROCESSORS (82C C C288-8)
BUS CONTROLLER FOR 80286 PROCESSORS (82C288-12 82C288-10 82C288-8) Y Provides Commands and Controls for Local and System Bus Y Wide Flexibility in System Configurations Y High Speed CHMOS III Technology
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
LEADER OF RF BROADBAND SOLTIONS RLNAGGA ltra Wide Band Low Noise Amplifier.~ Electrical Specifications, TA = ⁰C, Vcc = V Features Gain: Typical Noise Figure:. Typical P Output Power: m Typical Ohm Matched
More informationPreliminary Datasheet
Device Features Low Noise Figure: NF = 0.95 @ 1900MHz High Linearity: OIP3 = 36 dbm @ 1900 MHz Output P1 db = 22 dbm @ 1900 MHz Gain = 17 db @ 1900 MHz Internally matched to 50 ohms Vdd: 5.0V Lead-free/RoHS-compliant
More informationJFET Description 司 MOXTEK ultra low noise JFETs (MX JFETs) are used in a variety of applications including microanalysis, EDXRF, XRD. MOXT
JFETs 司 www.detecto 先锋科技股份有限公司 www.detecto公司 www.detec Contents 司 www.detecto公司 www.detectorteo.com JFET Description JFET Packages JFET Drawings JFET Characteristics Noise Graphs 3 4 5-6 7 45 West 160
More informationMonolithic Amplifier CMA-81+ Wideband, High Dynamic Range, Ceramic. DC to 6 GHz. The Big Deal
Wideband, High Dynamic Range, Ceramic Monolithic Amplifier 50Ω DC to 6 GHz The Big Deal Ceramic, hermetically sealed, nitrogen filled Low profile case, 0.045 High IP3, +38 dbm High POUT, +19.5 dbm CASE
More information5KP-HR Series. TVS Diodes Axial Leaded 5 kw > 5KP-HR series. Description. Uni-directional
5KP-HR Series RoHS Pb e3 AGENCY Uni-directional Agency Approvals AGENCY FILE NUMBER E2353 Bi-directional Maximum Ratings and Thermal Characteristics (T A =25 O C unless otherwise noted) Parameter Symbol
More informationTVS Diodes Axial Leaded 30 kw > 30KPA-HRA series. Features. 30 kw 8.0 W 400 A. -55 to 175 C. Notes: 8.0 C/W
3KPA-HRA Series RoHS Pb e3 Descriptions AGENCY Uni-directional Agency Approvals Maximum Ratings and Thermal Characteristics (T A =25 O C unless otherwise noted) Parameter Symbol Value Unit Peak Pulse Power
More information15KPA-HRA Series. TVS Diodes Axial Leaded 15 kw > 15KPA-HRA series. Descritions
5KPA-HRA Series RoHS Pb e3 Descritions Uni-directional The 5KPA-HRA High Reliability Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning
More informationLAMP 339-9SUGSURSUBC/S1174
Features High efficiency. Selected minimum intensities. Available on tape and reel. The product itself will remain within RoHS compliant version Compliance with EU REACH Compliance Halogen free. (Br
More informationTechnical Data Sheet 339-9SUGSURSUBC/S1182. Features. Descriptions. Applications. Device Selection Guide
Features Popular T-1 3/4 round package. Common anode. Built in red, green, and blue chips. Selected minimum intensities. Available on tape and reel. The product itself will remain within RoHS compliant
More informationMIL-STD-883G METHOD
STEADY-STATE LIFE 1. PURPOSE. The steady-state life test is performed for the purpose of demonstrating the quality or reliability of devices subjected to the specified conditions over an extended time
More informationDifferential Probes TDP1500 and TDP3500 Datasheet
Differential Probes and Datasheet Differential active probes provide truer signal reproduction and fidelity for high-frequency measurements. With ultra-low input capacitance and versatile device-under-test
More informationCPE/EE 427, CPE 527 VLSI Design I L06: Complementary CMOS Logic Gates
PE/EE 427, PE 527 VLSI esign I L6: omplementary MOS Logic Gates epartment of Electrical and omputer Engineering University of labama in Huntsville leksandar Milenkovic ( www.ece.uah.edu/~milenka ) www.ece.uah.edu/~milenka/cpe527-5f
More information86BSD Backside Digital Output
Stainless steel with O-ring seal Pressure/temperature read-out Backside digital output ASIC calibrated Absolute, gage Cable/connector option Low power option DESCRIPTION The 86BSD is a small profile, media
More informationFor a similar sensor with o-ring mounting, refer to the 85BSD digital output pressure sensor.
Weldable or threaded process fittings Pressure/temperature read-out Digital output ASIC calibrated Absolute, gage Cable/connector option Low power option DESCRIPTION The 85BSD is a small profile, media
More informationBZD27C3V6P to BZD27C200P
Zener Diodes with Surge Current Specification Features Sillicon planar zener diodes Low profile surface-mount package Zener and surge current specification Low leakage current Excellent stability High
More informationCMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9 and 1,024 x 9
CMOS ASYNCHONOUS FIFO IDT7200L IDT7201LA IDT7202LA FEATUES: First-In/First-Out dual-port memory 256 x organization (IDT7200) 512 x organization (IDT7201) 1,024 x organization (IDT7202) Low power consumption
More informationSX150A. Features. Typical Applications. Description
Datasheet -- Pressure Sensors: Measurement Type: Absolute; 0 psia to 150 psia, Unamplified, Representative photograph, actual product appearance may vary. Due to regional agency approval requirements,
More information3.3 VOLT CMOS ASYNCHRONOUS FIFO 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9, 8,192 x 9, 16,384 x 9 WRITE POINTER THREE- STATE BUFFERS DATA OUTPUTS FLAG
3.3 VOLT CMOS ASYNCHONOUS FIFO 512 x, 1,024 x, 2,048 x, 4,06 x, 8,12 x, 16,384 x LEAD FINISH (SnPb) AE IN EOL POCESS - LAST TIME BUY EXPIES JUNE 15, 2018 FEATUES: 3.3V family uses less power than the 5
More informationTotal Ionization Dose (TID) Test Results of the RH1021BMH-10 Precision 10V Low Dose Rate (LDR) LDR = 10 mrads(si)/s
Total Ionization Dose (TID) Test Results of the RH1021BMH-10 Precision 10V Reference @ Low Dose Rate (LDR) LDR = 10 mrads(si)/s 22 September 2014 Duc Nguyen, Sana Rezgui Acknowledgements The authors would
More informationPressure Sensor Bridge Configurations
Pressure Sensor Bridge Configurations 1. Purpose Describe different pressure sensor bridge configurations, when each can and cannot be used, and the advantages and disadvantages of each. 2. Introduction
More informationP9000 DESCRIPTION. For parts requiring RoHS compliance, please contact factory. P February /6
P9000 High accuracy through digital compensation High thermal stability Rugged stainless steel construction Ideal for test stands High burst pressure limit DESCRIPTION The P9000 Series is a range of advanced,
More informationDatasheet May, 2017 HPSD 4000 Pressure Transducer 1/5. Applications
HPSD 4000 Transducer 1/5 General description transducer HPSD 4000 is an OEM pressure sensing device. Signal conditioning consist of complete temperature compensation and adjusted amplifier in single, programmable
More informationXSL-360-5E. UV LED 5 mm TECHNICAL DATA. Absolute Maximum Ratings (T a =25 C) Specifications (If=20mA, T a =25 C) Drawing
XSL-360-5E TECHNICAL DATA UV LED 5 mm Drawing Absolute Maximum Ratings (T a =25 C) Item Symbol Value Unit DC Forward Current I F 25 ma Peak Pulse Forward Current * 1 I FP 100 ma Power Dissipation P D 100
More information5mm Infrared LED HIR7373B/L289
5mm Infrared LED Features High reliability High radiant intensity Peak wavelength λp=850nm 2.54mm Lead spacing Low forward voltage Pb Free This product itself will remain within RoHS compliant version.
More informationMiniature Pressure Sensors
Miniature Pressure Sensors Prime Grade Pressure Sensors Features 0 to 0.3 PSI to 0 to 100 PSI Pressure Ranges Highest accuracy version Temperature Compensated Calibrated Zero and Span Applications General
More informationMUR120 Series. SWITCHMODE Power Rectifiers MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160 ULTRAFAST RECTIFIERS 1.
MUR12 Series Preferred Devices SWITCHMODE Power Rectifiers MUR15, MUR11, MUR115, MUR12, MUR13, MUR14, MUR16 The MUR12 series of SWITCHMODE power rectifiers are designed for use in switching power supplies,
More informationAMS 6915 Board mount pressure sensor with digital output (I²C)
Board mount pressure sensor with digital output (I²C) FEATURES Calibrated and temperature compensated pressure sensor with digital output (I²C) Differential, relative (gage), bidirectional differential,
More informationManual. MEMS Combustible Gas Sensor. Zhengzhou Winsen Electronics Technology Co., Ltd. (Model No.:GM-402B) Version: 1.0. Valid from:
MEMS Combustible Gas Sensor (Model No.:GM-402B) Manual Version: 1.0 Valid from: 2015-12-01 Zhengzhou Winsen Electronics Technology Co., Ltd Statement This manual copyright belongs to Zhengzhou Winsen Electronics
More information5mm Infrared LED EAILP05RDDB1
Features High reliability High radiant intensity Peak wavelength λp=940nm 2.54mm Lead spacing Low forward voltage Pb Free This product itself will remain within RoHS compliant version. Description Everlight
More informationMEMS VOC Gas Sensor. (Model No.:GM-503A) Manual. Version: 1.0. Valid from: Zhengzhou Winsen Electronics Technology Co.
MEMS VOC Gas Sensor (Model No.:GM-503A) Manual Version: 1.0 Valid from: 2015.12.1 Zhengzhou Winsen Electronics Technology Co., Ltd Statement This manual copyright belongs to Zhengzhou Winsen Electronics
More informationDIY - PC - Interface for Suunto Cobra/Vyper/Mosquito
DIY - PC - Interface for Suunto Cobra/Vyper/Mosquito Summary This document is the distinct consequence of the Spyder/Stinger interface DIY. After having many e-mails concerning the application for the
More informationTotal Ionization Dose (TID) Test Results of the RH117H Positive Adjustable Low Dose Rate (LDR) LDR = 10 mrads(si)/s
Total Ionization Dose (TID) Test Results of the RH117H Positive Adjustable Regulator @ Low Dose Rate (LDR) LDR = 10 mrads(si)/s 18 December 2014 Duc Nguyen, Sana Rezgui Acknowledgements The authors would
More informationModel FS5001B VA.1. MEMS Mass Flow Sensors ISO 9001 ISO OHSAS 18001
Model FS5001B MEMS Mass Flow Sensors VA.1 ISO 9001 ISO 14001 OHSAS 18001 Model FS5001B Features Low mass flow range from 0 ~ 00 sccm up to 0 ~ 1000 sccm Outstanding accuracy of ±.0 % Response time < 10
More informationDATA SHEET. BZT03 series Voltage regulator diodes DISCRETE SEMICONDUCTORS Jun 11. Product specification Supersedes data of April 1992
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D116 Supersedes data of April 1992 1996 Jun 11 FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability
More informationAMS 6916 Board mount pressure sensor with ratiometric analog output
FEATURES Piezoresistive pressure sensor with amplified analog output Calibrated and temperature compensated Ratiometric voltage output, 0.5 4.5 V Digital signal conditioning, 12 bit output resolution Differential,
More information广东锐陆光电科技有限公司 GUANG DONG ELITE PHOTOELECTRIC TECHNOLOGY CO.,LTD. Product Specification
Product Specification MODEL : 5050A Product Description : EMC5050 5W 36V Address:Guanhuang North road Hu anwei Gaobu Town Tel: 0769-89080660 Fax: 0769-89080658 Page 1 of 8 Feature Viewing angle:120 deg
More information5mm Infrared LED,T-1 HIR323C
,T-1 Features High reliability High radiant intensity Peak wavelength λp=850nm 2.54mm Lead spacing Low forward voltage Pb Free This product itself will remain within RoHS compliant version. Compliance
More informationTypical Performance 1. LTE 20M ACLR dbm. 2 OIP3 _ measured on two tones with a output power 5dBm/ tone, F2 F1 = 1 MHz.
Device Features Gain = 15.6 db @ 2140MHz OIP3 = 35.0 dbm @ 2140 MHz Output P1 db = 23.2 dbm @ 2140 MHz N.F = 2.9dB @ 2140 MHz Internally matched to 50 ohms Lead-free/RoHS-compliant SOT-89 SMT package Product
More informationDATA SHEET. BZD23 series Voltage regulator diodes DISCRETE SEMICONDUCTORS Jun 10. Product specification Supersedes data of October 1991
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D119 Supersedes data of October 1991 1996 Jun 10 FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Zener
More informationAnalysis of Pressure Rise During Internal Arc Faults in Switchgear
Analysis of Pressure Rise During Internal Arc Faults in Switchgear ASANUMA, Gaku ONCHI, Toshiyuki TOYAMA, Kentaro ABSTRACT Switchgear include devices that play an important role in operations such as electric
More informationTotal Ionization Dose (TID) Test Results of the RH1028MW Ultralow Noise Precision High Speed Operational Low Dose Rate (LDR)
Total Ionization Dose (TID) Test Results of the RH1028MW Ultralow Noise Precision High Speed Operational Amplifiers @ Low Dose Rate (LDR) LDR = 10 mrads(si)/s 20 February 2015 Duc Nguyen, Sana Rezgui Acknowledgements
More information3mm Infrared LED,T-1 HIR204C
,T-1 Features High reliability High radiant intensity Peak wavelength λp=850nm 2.54mm Lead spacing Low forward voltage Pb Free This product itself will remain within RoHS compliant version. Description
More informationOperating Instructions for Intrinsically Safe Pressure Transmitters Series DMG/******** for Hazardous Application in Coal Mining Industry
Operating Instructions for Intrinsically Safe ressure Transmitters Series DMG/******** for Hazardous Application in Coal Mining Industry Contents 1. Introduction 2. Abbreviations, symbols 3. Important
More informationRelative Pressure Sensor for Automobile Fuel Tanks
Relative Pressure Sensor for Automobile Fuel Tanks KATO, Hirofumi ASHINO, Kimihiro SATO, Eisuke ABSTRACT In recent years, there has been increasing regulation to reduce the environmental burden of automobiles.
More informationDesigning of Low Power and Efficient 4-Bit Ripple Carry Adder Using GDI Multiplexer
Designing of Low Power and Efficient 4-Bit Ripple Carry Adder Using GDI Multiplexer 1 Vinay.K.Kolur, 2 Pavankumar Kulkarni Department of EEE, BLDEA s CET Vijayapur Abstract The low power and less delay
More informationSPD Pressure Sensor Families
DATASHEET SPD Pressure Sensor Families 1/7 Introduction to the principals of Smart Pressure Devices 1 Basic principles Pressure sensors are based on the principle of bending a membrane caused by the pressure
More informationCBC2 performance with switched capacitor DC-DC converter. systems meeting, 12/2/14
CBC2 performance with switched capacitor DC-DC converter systems meeting, 12/2/14 1 reminder of results from CBC1 +2.5V GND 1n can power CBC from single +2.5V supply 1uF DC-DC diff. clock (CMOS) 1 MHz
More informationSimulation with IBIS in Tight Timing Budget Systems
Asian IBIS Summit 2005 Simulation with IBIS in Tight Timing Budget Systems SUI,SHIJU sui.shiju shiju@zte.com. @zte.com.cncn Asian IBIS Summit 2005 1 Agenda Basis of system timing analysis Simulation with
More informationType 715P/717P, Orange Drop, High Voltage, Polypropylene Film/Foil
Type 715P/717P are high AC voltage, film/foil polypropylene capacitors. Well suited for high AC voltage applications requiring corona free performacnce. These capacitors are ideal in high frequency, high
More informationNPN Planer RF TRANSISTOR
NPN Planer RF TRANSISTOR DESCRIPTION The is a low Noise figure and good associated gain performance at Microwave uencies It is suitable for a high density surface mount since transistor has been SOT343
More informationJEDEC STANDARD. Temperature Cycling. JESD22-A104C (Revision of JESD22-A104-B) JEDEC SOLID STATE TECHNOLOGY ASSOCIATION MAY 2005
JEDEC STANDARD Temperature Cycling JESD22-A104C (Revision of JESD22-A104-B) MAY 2005 JEDEC SOLID STATE TECHNOLOGY ASSOCIATION NOTICE JEDEC standards and publications contain material that has been prepared,
More informationVLSI Design 14. Memories
Last module: Synthesis and Verilog This module Memory arrays SRMs Serial Memories Dynamic memories Memory rrays Memory rrays Random ccess Memory Serial ccess Memory Content ddressable Memory (CM) Read/Write
More informationPHPS-7500 OEM Ceramic Pressure Transducer
1 / 5 General description PHPS-7500 is a new generation of ceramic pressure sensors made with low-temperature cofired ceramic (LTCC) technology and a patented sensor-construction solution. The pressure
More informationMANUAL KPS Pressure Control Valve
TetraTec Instruments GmbH Gewerbestrasse 8 71144 Steinenbronn Deutschland E-Mail: info@tetratec.de Tel.: 07157/5387-0 Fax: 07157/5387-10 MANUAL Pressure Control Valve *** VERSION 1.0 *** Update: 17.11.2006
More informationHMU Series Basic pressure sensors
FEATURES mbar to 0 bar, to 50 absolute, gage or differential pressure Increased media compatibility Wide operating temperature range SIL and DIP housings RoHS compliant Quality Management System according
More informationDESCRIPTION FEATURES
DESCRIPTION The TruStability Standard Accuracy Silicon Ceramic (SSC) Series is a piezoresistive silicon pressure sensor offering a ratiometric analog output for reading pressure over the specified full
More informationFUNCTIONAL BLOCK DIAGRAM IDT72V81 IDT72V82 IDT72V83 IDT72V84 IDT72V85
3.3 Volt CMOS DUAL ASYNCHONOUS FIFO DUAL 512 x, DUAL 1,024 x DUAL 2,048 x, DUAL 4,06 X DUAL 8,12 X IDT72V81 IDT72V82 IDT72V83 IDT72V84 IDT72V85 FEATUES: The IDT72V81 is equivalent to two IDT72V01-512 x
More informationHPSD 3000 Pressure Transducer
General description Applications transducer HPSD 3000 is an OEM pressure sensing device. Signal conditioning consis of complete temperature compensation ASIC. High preformance and accuracy enables use
More informationDMK 458. Pressure Transmitter for Marine and Offshore. Ceramic Sensor. accuracy according to IEC 60770: standard: 0.25 % FSO option: 0.
Pressure Transmitter for Marine and Offshore Ceramic Sensor accuracy according to IEC 60770: standard: 0.5 % FSO option: 0. % FSO Nominal pressure from 0... 40 mbar up to 0... 0 bar Output signals -wire:
More informationFeatures hermetic shielded case very small phase variation
Plug-In Limiter 50Ω Broadband, 0.1 to 150 MHz Maximum Ratings Operating Temperature -55 C to 100 C Storage Temperature -55 C to 100 C RF Input Power 100mW Control Current 10mA Permanent damage may occur
More informationDESIGN AND CHARACTERIZATION OF 20NM SOI MOSFET DOPING ABRUPTNESS DEPENDENT
DESIGN AND CHARACTERIZATION OF 20NM SOI MOSFET DOPING ABRUPTNESS DEPENDENT A. S. M. Zain 1, N. F. M. Zain 2, F. Salehuddin 1, N. Jamaluddin 2 and N. Abdullah Yaacob 2 1 Centre for Telecommunication Research
More informationRigel 601 CHECKBOX. Instruction Manual. 348A551 Issue 2.0. April Seaward Electronic Ltd. Issue 2.0
Rigel 601 CHECKBOX Instruction Manual 348A551 Issue 2.0 April 2006 2006 Seaward Electronic Ltd. Issue 2.0 Limited Warranty & Limitation of Liability Rigel Medical guarantees this product for a period of
More informationNon Invasive Stability Measurements vs. Bode Plots
Comparisons of Non Invasive Stability Measurements vs. Bode Plots AEi Systems 5777 W. Century Blvd. Suite 285, Los Angeles, CA 945 3 26 44 info@aeng.com More Information: https://www.picotest.com/non invasive
More informationUser s Manual EJX/EJA-E Series NEPSI Certification [Option code: /NF2, /NS21, /NS24 and /NS25] IM 01C25A00-12E
User s Manual EJX/EJA-E Series NEPSI Certification [Option code: /NF2, /NS21, /NS24 and /NS25] 12th Edition 1 1. Introduction Thank you for purchasing the DPharp electronic pressure transmitter. This manual
More informationHTD series digital differential pressure sensors
The HTD differential pressure sensors are specially developed for low pressure ranges and demanding space constrictions. The sensors allow for flexible direct manifold assemblies and offer high performance
More informationNON-CATALOG. Features excellent image rejection, 27 db typ. low conversion loss, 7.0 db typ. aqueous washable J-leads for strain relief
NON-CATAG Surface Mount Image Reject Mixer Level 13 ( Power +13dBm) 2490 to 2550 MHz Maximum Ratings Operating Temperature -40 C to 85 C Storage Temperature -55 C to 100 C RF Power 200mW IF Current 40mA
More informationProduct Specification
Ultrasonic Cold Water Meter Body Part Number: HS0014-000 Model Number: RC15/HS-US0004-000-01 Overview The Ultrasonic Cold Water Meter Body is comprised of a pair of ultrasonic flow sensors and a DN15 polymer
More informationIBIS Modeling for IO-SSO Analysis. Thunder Lay and Jack W.C. Lin IBIS Asia Summit Taipei, Taiwan Nov. 19, 2013
IBIS Modeling for IO-SSO Analysis Thunder Lay and Jack W.C. Lin IBIS Asia Summit Taipei, Taiwan Nov. 19, 2013 Agenda What is IO-SSO? Missing Components in Traditional IO-SSO Analysis Accurate On-die and
More informationSESI SMD Power Inductors and Transformers
39 SESI SMD Power Inductors and Transformers Microspire upgraded aircoil grid transfer + transfer moulding technology by using PLNR ferrites ; which lead to the SESI product range (SMD Energy Storage Inductors).
More informationMass Flow Controller (MFC) for Gases
Mass Flow Controller (MFC) for Gases Type 8713 can be combined with... Direct flow measurement by MEMS- Technology for nominal flow rates from 1 ml N /min to 8 l N /min (N 2 ) High accuracy and repeatability
More information(TRCM) Wire Wound RF SMD Inductor
Version: February 17, 2017 (TRCM) Wire Wound RF SMD Inductor Token Electronics Industry Co., Ltd. Web: www.token.com.tw Email: rfq@token.com.tw Taiwan: No.137, Sec. 1, Zhongxing Rd., Wugu District, New
More informationUNIVERSITY OF CAMBRIDGE INTERNATIONAL EXAMINATIONS International General Certifi cate of Secondary Education
www.xtremepapers.com UNIVERSITY OF CAMBRIDGE INTERNATIONAL EXAMINATIONS International General Certifi cate of Secondary Education *0008718255* DESIGN AND TECHNOLOGY 0445/41 Paper 4 Systems and Control
More informationPhilips SAA7118E Multi Standard Video Decoder Process Review
March 31, 2006 Philips SAA7118E Multi Standard Video Decoder Process Review For comments, questions, or more information about this report, or for any additional technical needs concerning semiconductor
More informationCPE/EE 427, CPE 527 VLSI Design I L21: Sequential Circuits. Review: The Regenerative Property
CPE/EE 427, CPE 527 VLSI esign I L21: Sequential Circuits epartment of Electrical and Computer Engineering University of Alabama in Huntsville Aleksandar Milenkovic ( www.ece.uah.edu/~milenka ) www.ece.uah.edu/~milenka/cpe527-5f
More informationInstruction and Maintenance Manual
Instruction and Maintenance Manual GRYF OXY Z 02/100/2 E Contact GRYF HB, spol. s r.o. Cechova 314 Havlickuv Brod 580 01 tel.: +420 569 426 627 fax: +420 569 426 627 Czech Republic www.gryf.eu Technical
More informationBasic Board Mount Pressure Sensors. Datasheet
Basic Board Mount Pressure Sensors TBP Series, Compensated/Unamplified 60 mbar 0 bar 6 kpa MPa psi 50 psi Millivolt Analog Output Datasheet Basic Board Mount Pressure Sensors Honeywell s Basic Board Mount
More informationThin-Film Technology. Accu-F / Accu-P Thin-Film RF/Microwave Capacitors.
Thin-Film Technology Accu-F / Accu-P Thin-Film RF/Microwave Capacitors 5 Accu-F / Accu-P Thin-Film Technology THE IDEAL CAPACITOR The non-ideal characteristics of a real capacitor can be ignored at low
More informationPHPS-7500 OEM Ceramic Pressure Transducer
1/5 Features General description PHPS-7500 is a new generation of ceramic pressure sensors made with low-temperature cofired ceramic (LTCC) technology and a patented sensor-construction solution. The pressure
More informationPolySwitch Radial-leaded Resettable Devices
PolySwitch Radial-leaded Resettable Devices Radial-leaded Raychem Circuit Protection has pioneered PPTC technology for over twenty years. Our radialleaded products represent the widest range of product
More information