IDT7200L IDT7201LA IDT7202LA

Transcription

1 CMOS ASYCHONOUS FIFO 256 x, 512 x, 1,024 x 7200L 7201LA 7202LA FEATUES: First-In/First-Out dual-port memory 256 x organization (7200) 512 x organization (7201) 1,024 x organization (7202) Low power consumption Active: 440m (max.) Power-down: 28m (max.) Ultra high speed 12ns access time Asynchronous and simultaneous read and write Fully expandable by both word depth and/or bit width Pin and functionally compatible with 720X family Status Flags: Empty, Half-Full, Full Auto-retransmit capability High-performance CEMOS technology Military product compliant to MIL-STD-883, Class B Standard Military Drawing # , , and are listed on this function Dual versions available in the TSSOP package. For more information, see 7280/7281/7282 data sheet (3208.pdf) 7280 = 2 x = 2 x = 2 x 7202 Industrial temperature range ( 40 o C to +85 o C) is available (plastic packages only) FUNCTIONAL BLOCK DIAGAM ITE CONTOL DESCIPTION: The 7201/7202 are dual-port memories that load and empty data on a first-in/first-out basis. The devices use Full and Empty flags to prevent data overflow and underflow and expansion logic to allow for unlimited expansion capability in both word size and depth. The reads and writes are internally sequential through the use of ring pointers, with no address information required to load and unload data. Data is toggled in and out of the devices through the use of the rite () and ead () pins. The devices utilize a -bit wide data array to allow for control and parity bits at the user s option. This feature is especially useful in data communications applications where it is necessary to use a parity bit for transmission/reception error checking. It also features a etransmit (T) capability that allows for reset of the read pointer to its initial position when T is pulsed LO to allow for retransmission from the beginning of data. A Half-Full Flag is available in the single device mode and width expansion modes. These FIFOs are fabricated using s high-speed CMOS technology. They are designed for those applications requiring asynchronous and simultaneous read/writes in multiprocessing and rate buffer applications. Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B. DATA INPUTS (D0-D8) ITE POINTE AM AAY 256 x 512 x 1,024 x EAD POINTE EAD CONTOL THEE- STATE BUES DATA OUTPUTS (Q0-Q8) S ESET LOGIC FLAG LOGIC FL/T EXPANSION LOGIC XO/HF 267 drw 01 DECEMBE Integrated Device Technology, Inc. DSC-267/7

2 7200L/7201LA/7202LA PIN CONFIGUATIONS INDEX D3 D8 NC VCC D4 D5 D8 D3 D2 D1 D0 Q0 Q1 Q2 Q3 Q8 GND VCC D4 D5 D6 D7 FL/T S XO/HF Q7 Q6 Q5 Q4 267 drw 02a D2 5 D1 6 D0 7 8 Q0 10 Q1 11 NC 12 Q Q3 Q8 GND NC Q4 Q D6 D7 NC FL/T S XO/HF Q7 Q6 267 drw 02b eference Order Package Type Identifier Code PLASTIC DIP (1) P28-1 P PLASTIC THIN DIP P28-2 T P CEDIP (1) D28-1 D THIN CEDIP D28-3 TD SOIC SO28-3 SO CEPACK (1) E28-2 XE TOP VIE eference Order Package Type Identifier Code LCC (1) L32-1 L PLCC J32-1 J TOP VIE NOTE: 1. The 600-mil-wide DIP (P28-1 and D28-1), CEPACK and LCC are not available for the ABSOLUTE MAMUM ATINGS Symbol ating Com l & Ind'l Mil. Unit VTEM Terminal Voltage 0.5 to to +7.0 V with espect to GND TSTG Storage 55 to to +155 o C Temperature IOUT DC Output 50 to to +50 ma Current NOTE: 267 tbl Stresses greater than those listed under ABSOLUTE MAMUM ATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ECOMMENDED DC OPEATING CONDITIONS Symbol Parameter Min. Typ. Max. Unit VCC Supply Voltage V Commercial/Industrial/Military GND Supply Voltage V VIH (1) Input High Voltage 2.0 V Commercial/Industrial VIH (1) Input High Voltage 2.2 V Military VIL (2) Input Low Voltage 0.8 V Commercial/Industrial/Military TA Operating Temperature 0 70 o C Commercial TA Operating Temperature o C Industrial TA Operating Temperature o C Military NOTES: 267 tbl For T/S/ input, VIH = 2.6V (commercial). For T/S/ input, VIH = 2.8V (military) V undershoots are allowed for 10ns once per cycle. 2

3 7200L/7201LA/7202LA DC ELECTICAL CHAACTEISTICS (Commercial: VCC = 5V ± 10%, TA = 0 o C to +70 o C; Industrial: VCC = 5V ± 10%, TA = 40 o C to +85 o C; Military: VCC = 5V ± 10%, TA = 55 o C to +125 o C) 7200L 7200L 7201LA 7201LA 7202LA 7202LA Com'l & Ind'l (1) Military ta = 12, 15, 20, 25, 35, 50 ns ta = 20, 30, 40, 50, 65, 80, 120 ns Symbol Parameter Min. Max. Min. Max. Unit ILI (2) Input Leakage Current (Any Input) µ A ILO (3) Output Leakage Current µ A VOH Output Logic 1 Voltage IOH = 2mA V VOL Output Logic 0 Voltage IOL = 8mA V ICC1 (4,5,6) Active Power Supply Current ma ICC2 (4,7) Standby Current (==S=FL/T=VIH) 5 15 ma NOTES: 267 tbl Industrial temperature range product for the 25 ns speed grade is available as a standard device. All other speed grades are available by special order. 2. Measurements with 0.4 VIN VCC. 3. VIH, 0.4 VOUT VCC. 4. Tested with outputs open (IOUT = 0). 5. Tested at f = 20 MHz. 6. Typical ICC1 = *fS *CL*fS (in ma) with VCC = 5V, TA = 25 o C, fs = CLK frequency = CLK frequency (in MHz, using TTL levels), data switching at fs/2, CL = capacitive load (in pf). 7. All Inputs = VCC - 0.2V or GND + 0.2V. CAPACITANCE (TA = +25 o C, f = 1.0 MHz) Symbol Parameter Condition Max. Unit CIN Input Capacitance VIN = 0V 8 pf COUT Output Capacitance VOUT = 0V 8 pf NOTE: 267 tbl Characterized values, not currently tested. 5V AC TEST CONDITIONS Input Pulse Levels GND to 3.0V Input ise/fall Times 5ns Input Timing eference Levels 1.5V Output eference Levels 1.5V Output Load See Figure tbl 08 TO OUTPUT PIN 680Ω 1.1K 30pF* or equivalent circuit Figure 1. Output Load * Includes scope and jig capacitances. 267 drw 03 3

4 7200L/7201LA/7202LA AC ELECTICAL CHAACTEISTICS (1) (Commercial: VCC = 5V ± 10%, TA = 0 o C to +70 o C; Industrial: VCC = 5V ± 10%, TA = 40 o C to +85 o C; Military: VCC = 5V ± 10%, TA = 55 o C to +125 o C) Commercial Com'l & Mil. Com'l & Ind'l (2) Military Com'l 7200L L L L L L LA LA LA LA LA LA LA LA LA LA LA LA35 Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit ts Shift Frequency MHz tc ead Cycle Time ns ta Access Time ns t ead ecovery Time ns tp ead Pulse idth (3) ns tlz ead Pulse Low to Data Bus at Low Z (4) ns tlz rite Pulse High to Data Bus at Low Z (4,5) ns tdv Data Valid from ead Pulse High ns thz ead Pulse High to Data Bus at High Z (4) ns tc rite Cycle Time ns tp rite Pulse idth (3) ns t rite ecovery Time ns tds Data Set-up Time ns tdh Data Hold Time ns tsc eset Cycle Time ns ts eset Pulse idth (3) ns tss eset Set-up Time (4) ns ts eset ecovery Time ns ttc etransmit Cycle Time ns tt etransmit Pulse idth (3) ns tts etransmit Set-up Time (4) ns tt etransmit ecovery Time ns tl eset to Empty Flag Low ns thfh,h eset to Half-Full and Full Flag High ns ttf etransmit Low to Flags Valid ns t ead Low to Empty Flag Low ns t ead High to Full Flag High ns tpe ead Pulse idth after High ns t rite High to Empty Flag High ns t rite Low to Full Flag Low ns thf rite Low to Half-Full Flag Low ns thf ead High to Half-Full Flag High ns tpf rite Pulse idth after High ns txol ead/rite to XO Low ns txoh ead/rite to XO High ns t Pulse idth (3) ns t ecovery Time ns ts Set-up Time ns NOTES: 267 tbl Timings referenced as in AC Test Conditions. 2. Industrial temperature range is available by special order for speed grades faster than 25ns. 3. Pulse widths less than minimum value are not allowed. 4. Values guaranteed by design, not currently tested. 5. Only applies to read data flow-through mode. 4

5 7200L/7201LA/7202LA AC ELECTICAL CHAACTEISTICS (1) (Continued) (Commercial: VCC = 5V ± 10%, TA = 0 o C to +70 o C; Industrial: VCC = 5V ± 10%, TA = 40 o C to +85 o C; Military: VCC = 5V ± 10%, TA = 55 o C to +125 o C) Military Com'l & Mil. Military (2) 7200 L L L L L LA LA LA LA LA LA LA LA LA LA120 Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit ts Shift Frequency MHz tc ead Cycle Time ns ta Access Time ns t ead ecovery Time ns tp ead Pulse idth (3) ns tlz ead Pulse Low to Data Bus at Low Z (4) ns tlz rite Pulse High to Data Bus at Low Z (4, 5) ns tdv Data Valid from ead Pulse High ns thz ead Pulse High to Data Bus at High Z (4) ns tc rite Cycle Time ns tp rite Pulse idth (3) ns t rite ecovery Time ns tds Data Set-up Time ns tdh Data Hold Time ns tsc eset Cycle Time ns ts eset Pulse idth (3) ns tss eset Set-up Time (4) ns ts eset ecovery Time ns ttc etransmit Cycle Time ns tt etransmit Pulse idth (3) ns tts etransmit Set-up Time (4) ns tt etransmit ecovery Time ns tl eset to Empty Flag Low ns thfh,h eset to Half-Full and Full Flag High ns ttf etransmit Low to Flags Valid ns t ead Low to Empty Flag Low ns t ead High to Full Flag High ns tpe ead Pulse idth after High ns t rite High to Empty Flag High ns t rite Low to Full Flag Low ns thf rite Low to Half-Full Flag Low ns thf ead High to Half-Full Flag High ns tpf rite Pulse idth after High ns txol ead/rite to XO Low ns txoh ead/rite to XO High ns t Pulse idth (3) ns t ecovery Time ns ts Set-up Time ns NOTES: 267 tbl Timings referenced as in AC Test Conditions 2. Speed grades 65, 80 and 120 not available in the CEPACK 3. Pulse widths less than minimum value are not allowed. 4. Values guaranteed by design, not currently tested. 5. Only applies to read data flow-through mode. 5

6 7200L/7201LA/7202LA SIGNAL DESCIPTIONS INPUTS: DATA IN (D0 D8) Data inputs for -bit wide data. CONTOLS: ESET (S S) eset is accomplished whenever the eset (S) input is taken to a LO state. During reset, both internal read and write pointers are set to the first location. A reset is required after power up before a write operation can take place. Both the ead Enable () and rite Enable () inputs must be in the HIGH state during the window shown in Figure 2, (i.e., tss before the rising edge of S) and should not change until ts after the rising edge of S. Half-Full Flag (HF HF) will be reset to HIGH after eset (S S). ITE ENABLE () A write cycle is initiated on the falling edge of this input if the Full Flag () is not set. Data set-up and hold times must be adhered to with respect to the rising edge of the rite Enable (). Data is stored in the AM array sequentially and independently of any on-going read operation. After half of the memory is filled and at the falling edge of the next write operation, the Half-Full Flag (HF) will be set to LO and will remain set until the difference between the write pointer and read pointer is less than or equal to one half of the total memory of the device. The Half-Full Flag (HF) is then reset by the rising edge of the read operation. To prevent data overflow, the Full Flag () will go LO, inhibiting further write operations. Upon the completion of a valid read operation, the Full Flag () will go HIGH after t, allowing a valid write to begin. hen the FIFO is full, the internal write pointer is blocked from, so external changes in will not affect the FIFO when it is full. EAD ENABLE () A read cycle is initiated on the falling edge of the ead Enable () provided the Empty Flag () is not set. The data is accessed on a First- In/First-Out basis, independent of any ongoing write operations. After ead Enable () goes HIGH, the Data Outputs (Q0 Q8) will return to a high impedance condition until the next ead operation. hen all data has been read from the FIFO, the Empty Flag () will go LO, allowing the final read cycle but inhibiting further read operations with the data outputs remaining in a high impedance state. Once a valid write operation has been accomplished, the Empty Flag () will go HIGH after t and a valid ead can then begin. hen the FIFO is empty, the internal read pointer is blocked from so external changes in will not affect the FIFO when it is empty. FIST LOAD/ETANSMIT (FL FL/T T) This is a dual-purpose input. In the Depth Expansion Mode, this pin is grounded to indicate that it is the first loaded (see Operating Modes). In the Single Device Mode, this pin acts as the retransmit input. The Single Device Mode is initiated by grounding the Expansion In (). The can be made to retransmit data when the etransmit Enable control (T) input is pulsed LO. A retransmit operation will set the internal read pointer to the first location and will not affect the write pointer. ead Enable () and rite Enable () must be in the HIGH state during retransmit. This feature is useful when less than 256/512/1,024 writes are performed between resets. The retransmit feature is not compatible with the Depth Expansion Mode and will affect the Half-Full Flag (HF), depending on the relative locations of the read and write pointers. EXPANSION IN ( ) This input is a dual-purpose pin. Expansion In () is grounded to indicate an operation in the single device mode. Expansion In () is connected to Expansion Out (XO) of the previous device in the Depth Expansion or Daisy Chain Mode. OUTPUTS: FULL FLAG ( ) The Full Flag () will go LO, inhibiting further write operation, when the write pointer is one location less than the read pointer, indicating that the device is full. If the read pointer is not moved after eset (S), the Full-Flag () will go LO after 256 writes for 7200, 512 writes for the 7201A and 1,024 writes for the. EMPTY FLAG ( ) The Empty Flag () will go LO, inhibiting further read operations, when the read pointer is equal to the write pointer, indicating that the device is empty. EXPANSION OUT/HALF-FULL FLAG (XO XO/HF HF) This is a dual-purpose output. In the single device mode, when Expansion In () is grounded, this output acts as an indication of a half-full memory. After half of the memory is filled and at the falling edge of the next write operation, the Half-Full Flag (HF) will be set LO and will remain set until the difference between the write pointer and read pointer is less than or equal to one half of the total memory of the device. The Half-Full Flag (HF) is then reset by using rising edge of the read operation. In the Depth Expansion Mode, Expansion In () is connected to Expansion Out (XO) of the previous device. This output acts as a signal to the next device in the Daisy Chain by providing a pulse to the next device when the previous device reaches the last location of memory. DATA OUTPUTS (Q0 Q8) Data outputs for -bit wide data. This data is in a high impedance condition whenever ead () is in a HIGH state. 6

7 7200L/7201LA/7202LA tsc S ts tss ts tl tss HF, thfh, th 267 drw 04 NOTES: 1.,, HF may change status during eset, but flags will be valid at tsc. 2. and = VIH around the rising edge of S. Figure 2. eset ta tc t tp ta tlz tdv thz Q0-Q8 DATA OUT VALID DATA OUT VALID tp tc t tds tdh D0-D8 DATA IN VALID DATA IN VALID 267 drw 05 Figure 3. Asynchronous rite and ead Operation LAST ITE IGNOED ITE FIST EAD ADDITIONAL EADS FIST ITE t t 267 drw 06 Figure 4. Full Flag From Last rite to First ead 7

8 7200L/7201LA/7202LA LAST EAD IGNOED EAD FIST ITE ADDITIONAL ITES FIST EAD t t ta DATA OUT VALID Figure 5. Empty Flag From Last ead to First rite VALID 267 drw 07 ttc tt T tts tt, ttf HF,, FLAG VALID Figure 6. etransmit 267 drw 08 t tpe 267 drw 0 Figure 7. Minimum Timing for an Empty Flag Coincident ead Pulse t tpf 267 drw 10 Figure 8. Minimum Timing for a Full Flag Coincident rite Pulse 8

9 7200L/7201LA/7202LA thf thf HF HALF-FULL O LESS MOE THAN HALF-FULL Figure. Half-Full Flag Timing HALF-FULL O LESS 267 drw 11 ITE TO LAST PHYSICAL LOCATION txol txoh EAD FOM LAST PHYSICAL LOCATION txol txoh XO 267 drw 12 Figure 10. Expansion Out t t ts ITE TO FIST PHYSICAL LOCATION ts EAD FOM FIST PHYSICAL LOCATION 267 drw 13 Figure 11. Expansion In OPEATING MODES: Care must be taken to assure that the appropriate flag is monitored by each system (i.e. is monitored on the device where is used; is monitored on the device where is used). For additional information, refer to Tech Note 8: Operating FIFOs on Full and Empty Boundary Conditions and Tech Note 6: Designing with FIFOs. SINGLE DEVICE MODE A single may be used when the application requirements are for 256/512/1,024 words or less. These devices are in a Single Device Configuration when the Expansion In () control input is grounded (see Figure 12). DEPTH EXPANSION The can easily be adapted to applications when the requirements are for greater than 256/512/1,024 words. Figure 14 demonstrates Depth Expansion using three s. Any depth can be attained by adding additional s. These FIFOs operate in the Depth Expansion mode when the following conditions are met: 1. The first device must be designated by grounding the First Load (FL) control input. 2. All other devices must have FL in the HIGH state. 3. The Expansion Out (XO) pin of each device must be tied to the Expansion In () pin of the next device. See Figure External logic is needed to generate a composite Full Flag () and Empty Flag (). This requires the Oing of all s and Oing of all s (i.e. all must be set to generate the correct composite or ). See Figure The etransmit (T) function and Half-Full Flag (HF) are not available in the Depth Expansion Mode. For additional information, refer to Tech Note : Cascading FIFOs or FIFO Modules.

10 7200L/7201LA/7202LA USAGE MODES: H EXPANSION ord width may be increased simply by connecting the corresponding input control signals of multiple devices. Status flags (, and HF) can be detected from any one device. Figure 13 demonstrates an 18-bit word width by using two s. Any word width can be attained by adding additional s (Figure 13). BIDIECTIONAL OPEATION Applications which require data buffering between two systems (each system capable of ead and rite operations) can be achieved by pairing s as shown in Figure 16. Both Depth Expansion and idth Expansion may be used in this mode. DATA FLO-THOUGH Two types of flow-through modes are permitted, a read flow-through and write flow-through mode. For the read flow-through mode (Figure 17), the FIFO permits a reading of a single word after writing one word of data into an empty FIFO. The data is enabled on the bus in (t + ta) ns after the rising edge of, called the first write edge, and it remains on the bus until the line is raised from LO-to-HIGH, after which the bus would go into a three-state mode after thz ns. The line would have a pulse showing temporary deassertion and then would be asserted. In the write flow-through mode (Figure 18), the FIFO permits the writing of a single word of data immediately after reading one word of data from a full FIFO. The line causes the to be deasserted but the line being LO causes it to be asserted again in anticipation of a new data word. On the rising edge of, the new word is loaded in the FIFO. The line must be toggled when is not asserted to write new data in the FIFO and to increment the write pointer. COMPOUND EXPANSION The two expansion techniques described above can be applied together in a straightforward manner to achieve large FIFO arrays (see Figure 15). (HALF-FULL FLAG) (HF) ITE () DATA IN (D) FULL FLAG () ESET (S) EAD () DATA OUT (Q) EMPTY FLAG () ETANSMIT (T) EXPANSION IN () 267 drw 14 Figure 12. Block Diagram of Single 256 x, 512 x, 1,024 x FIFO HF HF 18 DATA IN (D) ITE () FULL FLAG () ESET (S) EAD () EMPTY FLAG () ETANSMIT (T) 18 DATA OUT (Q) 267 drw 15 Figure 13. Block Diagram of 256 x 18, 512 x 18, 1,024 x 18 FIFO Memory Used in idth Expansion Mode 10

11 7200L/7201LA/7202LA TABLE I ESET AND ETANSMIT Single Device Configuration/idth Expansion Mode Inputs Internal Status Outputs Mode S T ead Pointer rite Pointer HF eset 0 X 0 Location Zero Location Zero etransmit Location Zero Unchanged X X X ead/rite Increment (1) Increment (1) X X X NOTE: 267 tbl 0 1. Pointer will increment if flag is HIGH. TABLE II ESET AND FIST LOAD TUTH TABLE Depth Expansion/Compound Expansion Mode Inputs Internal Status Outputs Mode S FL ead Pointer rite Pointer eset First Device 0 0 (1) Location Zero Location Zero 0 1 eset All Other Devices 0 1 (1) Location Zero Location Zero 0 1 ead/rite 1 X (1) X X X X NOTE: 267 tbl is connected to XO of previous device. See Figure 14. S = eset Input, FL/T = First Load/etransmit, = Empty Flag Output, = Full Flag Output, = Expansion Input, HF = Half-Full Flag Output D XO Q FL VCC XO FULL FL EMPTY XO S FL 267 drw 16 Figure 14. Block Diagram of 768 x, 1,536 x, 3,072 x FIFO Memory (Depth Expansion) 11

12 7200L/7201LA/7202LA Q0-Q8 Q-Q17 Q(N-8)-Qn Q0-Q8 Q-Q17 Q(N-8)-Qn,, S DEPTH EXPANSION BLOCK DEPTH EXPANSION BLOCK DEPTH EXPANSION BLOCK D0-DN D0-D8 D-D17 D-DN D18-DN D(N-8)-DN NOTES: 1. For depth expansion block see section on Depth Expansion and Figure For Flag detection see section on idth Expansion and Figure 13. D(N-8)-DN 267 drw 17 Figure 15. Compound FIFO Expansion A A DA 0-8 B B HFB QB 0-8 SYSTEM A SYSTEM B QA 0-8 DB 0-8 A HFA A B B 267 drw 18 Figure 16. Bidirectional FIFO Mode DATA IN tpe DATA OUT tlz t ta t DATA OUTVALID 267 drw 1 Figure 17. ead Data Flow-Through Mode 12

13 tpf t t tdh DATA IN DATA IN VALID ta tds DATA OUT DATA OUT VALID Figure 18. rite Data Flow-Through Mode 267 drw 20 ODEING INFOMATION XXXX X XXX X X Device Type Power Speed Package Process/ Temperature ange Blank (1) I B P TP D TD J SO L XE Commercial (0 o C to +70 o C) Industrial (-40 o C to +85 o C) Military (-55 o C to +125 o C) Compliant to MIL-STD-883, Class B Plastic DIP Plastic Thin DIP CEDIP Thin CEDIP Plastic Leaded Chip Carrier SOIC Leadless Chip Carrier CEPACK PLCC LCC P28-1 P28-2 D28-1 D28-3 J32-1 SO28-3 L32-1 E28-2 (7201 & 7202 Only) (7201 & 7202 Only) (7201 & 7202 Only) (7201 & 7202 Only) (2) LA Commercial Only Commercial Only Commercial and Military Commercial and Industrial Military Only Commercial Only Military Only Commercial and Military Military only-- except XE package Low Power Access Time (ta) Speed in Nanoseconds x -Bit FIFO 512 x -Bit FIFO 1,024 x -Bit FIFO 256 x -Bit DUAL FIFO 512 x -Bit DUAL FIFO 1,024 x -Bit DUAL FIFO NOTES: 1. Industrial temperature range is available for plastic packages by special order for speed grades faster than 25ns. 2. "A" to be included for 7201 and 7202 ordering part number. See 7280/7281/7282 data sheet for details (3208.pdf) 267 drw Stender ay Santa Clara, CA 5054 fax: The logo is a registered trademark of Integrated Device Technology, Inc. 13